检索结果-南通市图书馆

Funneling current in Si-doped infrared n type-GaAs heterostructures emitter

Frontiers of Optoelectronics 2014年第4期7卷 501-508页

作者： Pradip DALAPATI Nabin Baran MANIK Asok Nath BASU Condensed Matter Physics Research Center Department of Physics Jadavpur University Kolkata 700032 India

In the present work, we measured the forward bias current-voltage （I-V） characteristics of Si-doped n type gallium arsenide （GaAs） heterostructures infrared emitter over a wide temperature range from 350 to 77 K. Results showed that the slopes of the exponential curve changed slowly with temperature. The analysis of the various tunneling mechanisms indicated that the tunneling current varied approximately as a function of - exp（- αEg ＋ βeV） where the parameters α and β varied indistinctively with temperature and voltage tunneling current on the The dependence of forward temperature and bias can be explained by thermally induced band gap shrinkage and bias induced route change respectively. These results will be helpful for application of the optoelectronics device in both high and low temperature ambiences.

关键词： infrared emitter tunneling characteristic energy band gap thermal stress

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Electron tunnelling phase time and dwell time through an associated delta potential barrier

引用

Chinese Physics B 2005年第1期14卷 208-211页

作者：白尔隽舒启清 InstituteofAppliedNuclearTechnology ShenzhenUniversityShenzhen518060China SchoolofScience ShenzhenUniversityShenzhen518060China

The electron tunnelling phase time τp and dwell time τD through an associated delta potential barrier U(x) = ξδ(x)are calculated and both are in the order of 10-17 - 10-16s. The results show that the dependence of the phase time on the delta barrier parameter ξ can be described by the characteristic length lc = h2/meξ and the characteristic energy Ec = meξ2/H2 of the delta barrier, where me is the electron mass, Ic and Ec are assumed to be the effective width and height of the delta barrier with lcEc= ξ, respectively. It is found that τD reaches its maximum and τD = τP as the energy of the tunnelling electron is equal to Ec/2, i.e. as lc = λDB, λDB is de Broglie wave length of the electron.

关键词： associated delta potential barrier tunnelling phase times tunnelling dwell times characteristic length characteristic energy

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Tunneling current in Si-doped n type-GaAs heterostructures infrared emitter

引用

Frontiers of Optoelectronics 2014年第04期7卷 501-508页

作者： Pradip DALAPATI Nabin Baran MANIK Asok Nath BASU Condensed Matter Physics Research Center Department of Physics Jadavpur University

In the present work, we measured the forward bias current-voltage（I-V） characteristics of Si-doped n type gallium arsenide（GaAs） heterostructures infrared emitter over a wide temperature range from 350 to 77 K. Results showed that the slopes of the exponential curve changed slowly with temperature. The analysis of the various tunneling mechanisms indicated that the tunneling current varied approximately as a function of ～ exp（ – αEg+ βeV）where the parameters α and β varied indistinctively with temperature and voltage. The dependence of forward tunneling current on the temperature and bias can be explained by thermally induced band gap shrinkage and bias induced route change respectively. These results will be helpful for application of the optoelectronics device in both high and low temperature ambiences.

关键词： infrared emitter tunneling characteristic energy band gap thermal stress

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：