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Chinese Physics B 2018年第8期27卷 368-373页

作者： Xi-Feng Cao Hui Liu Wen-Jia Jiang Zhong-Xi Ning Run Li Da-Ren Yu Laboratory of Plasma Propulsion Harbin Institute of Technology（HIT）Harbin 150001China

Hall thruster has the advantages of simple structure, high specific impulse, high efficiency, and long service life, and so on. It is suitable for spacecraft attitude control, North and South position keeping, and other track tasks. The anode layer Hall thruster is a kind of Hall thruster. The thruster has a longer anode area and a relatively short discharge channel. In this paper, the effect of the channel length on the performance of the anode layer Hall thruster is simulated by the PIC simulation method. The simulation results show that the change of the channel length has significant effect on the plasma parameters, such as potential and plasma density and so on. The ionization region mainly concentrates at the hollow anode outlet position, and can gradually move toward the channel outlet as the channel length decreases. The collision between the ions and the wall increases with the channel length increasing. So the proper shortening of the channel length can increase the life of the thruster. Besides, the results show that there is a best choice of the channel length for obtaining the best performance. In this paper, thruster has the best performance under a channel length of 5 mm.

关键词： anode layer Hall thruster channel length potential

Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices

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Chinese Physics B 2022年第1期31卷 529-534页

作者： Ren-Ren Xu Qing-Zhu Zhang Long-Da Zhou Hong Yang Tian-Yang Gai Hua-Xiang Yin Wen-Wu Wang Integrated Circuit Advanced Process Center(ICAC) Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China

A comprehensive study of the negative and positive bias temperature instability(NBTI/PBTI)of 3D FinFET devices with different small channel lengths is *** is found while with the channel lengths shrinking from 100 nm to 30 nm,both the NBTI characteristics of p-FinFET and PBTI characteristics of n-FinFET turn ***,the channel length dependence on NBTI is more serious than that on *** the analysis of the physical mechanism of BTI and the simulation of 3-D stress in the FinFET device,a physical mechanism of the channel length dependence on NBTI/PBTI is *** extra fluorine passivation in the corner of bulk oxide and stronger channel stress in p-FinFETs with shorter channel length causes less NBTI issue,while the extra nitrogen passivation in the corner of bulk oxide induces less PBTI degradation as the channel length decreasing for *** mechanism well matches the experimental result and provides one helpful guide for the improvement of reliability issues in the advanced FinFET process.

关键词： bias temperature instability(BTI) channel length stress FinFET

Analysis on the positive dependence of channel length on ESD failure current of a GGNMOS in a 5 V CMOS

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Journal of Semiconductors 2013年第2期34卷 41-45页

作者：吴道训蒋苓利樊航方健张波 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

Contrary to general understanding, a test result shows that devices with a shorter channel length have a degraded ESD performance in the advanced silicided CMOS process. Such a phenomenon in a gate-grounded NMOSFET （GGNMOS） was investigated, and the current spreading effect was verified as the predominant factor. Due to transmission line pulse （TLP） measurements and Sentaurus technology computer aided design （TCAD） 2-D numerical simulations, parameters such as current gain, on-resistance and power density were discussed in detail.

关键词： ESD channel length GGNMOS current spreading

Impact of channel length and Width for Charge Transportation of Graphene Field Effect Transistor

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Chinese Journal of Chemical Physics 2020年第6期33卷 757-763,I0003页

作者： Kamal Hosen Md.Rasidul Islam Kong Liu Department of Electrical and Electronic Engineering Khulna University of Engineering&TechnologyKhulna-9203Bangladesh Key Laboratory of Semiconductor Materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The effect of channel length and width on the large and small-signal parameters of the graphene field effect transistor have been explored using an analytical *** the case of faster saturation as well as extremely high transit frequency,the graphene field effect transistor shows outstanding *** the transfer curve,it is observed that there is a positive shift of Dirac point from the voltage of 0.15 V to 0.35 V because of reducing channel length from 440 nm to 20 nm and this curve depicts that graphene shows ambipolar ***,it is found that because of widening channel the drain current increases and the maximum current is found approximately 2.4 mA and 6 mA for channel width 2μm and 5μm ***,an approximate symmetrical capacitance-voltage(C-V)characteristic of the graphene field effect transistor is obtained and the capacitance reduces when the channel length decreases but the capacitance can be increased by raising the channel *** addition,a high transconductance,that demands high-speed radio frequency(RF)applications,of 6.4 mS at channel length 20 nm and 4.45 mS at channel width 5μm along with a high transit frequency of 3.95 THz have been found that demands high-speed radio frequency applications.

关键词： Graphene Graphene field effect transistor Large signal Small-signal channel length channel width

Influence of epitaxial layer structure and cell structure on electrical performance of 6.5 kV SiC MOSFET

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Journal of Semiconductors 2022年第8期43卷 71-77页

作者： Lixin Tian Zechen Du Rui Liu Xiping Niu Wenting Zhang Yunlai An Zhanwei Shen Fei Yang Xiaoguang Wei State Key Laboratory of Advanced Power Transmission Technology Global Energy Interconnection Research Institute Co.Ltd.Beijing 102209China Key Laboratory of Semiconductor Material Sciences Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

Silicon carbide(SiC)material features a wide bandgap and high critical breakdown field *** also plays an important role in the high efficiency and miniaturization of power electronic *** is an ideal choice for new power electronic devices,especially in smart grids and high-speed *** the medium and high voltage fields,SiC devices with a blocking voltage of more than 6.5 kV will have a wide range of *** this paper,we study the influence of epitaxial material properties on the static characteristics of 6.5 kV SiC MOSFET.6.5 kV SiC MOSFETs with different channel lengths and JFET region widths are manufactured on three wafers and *** FN tunneling of gate oxide,HTGB and HTRB tests are performed and provide data support for the industrialization process for medium/high voltage SiC MOSFETs.

关键词： silicon carbide epitaxial layer channel length JFET region width FN tunneling HTGB

Comparative study of leakage power in CNTFET over MOSFET device

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Journal of Semiconductors 2014年第11期35卷 40-45页

作者： Sanjeet Kumar Sinha Saurabh Chaudhury Department of Electrical Engineering NIT SilcharAssam-788010India

A comparison of the CNTFET device with the MOSFET device in the nanometer regime is reported. The characteristics of both devices are observed as varying the oxide thickness. Thereafter, we have analyzed the effect of the chiral vector and the temperature on the threshold voltage of the CNTFET device. After simulation on the HSPICE tool, we observed that the high threshold voltage can be achieved at a low chiral vector pair. It is also observed that the effect of temperature on the threshold voltage of the CNTFET is negligibly small. After that, we have analyzed the channel length variation and their impact on the threshold voltage of the CNTFET as well as MOSFET devices. We found an anomalous effect from our simulation result that the threshold voltage increases with decreasing the channel length in CNTFET devices; this is contrary to the well known short channel effect. It is observed that at below the 10 nm channel length, the threshold voltage is increased rapidly in the case of the CNTFET device, whereas in the case of the MOSFET device, the threshold voltage decreases drastically.

关键词： MOSFET CNTFET temperature oxide thickness threshold voltage channel length

Perpendicular intergrowth ZSM-5 plates with shortened 10-MR pores

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Chinese Journal of Catalysis 2020年第7期41卷 1132-1139页

作者： Ensheng Zhan Zhiping Xiong Yan Zhou Mingrun Li Pengfei Wang Weibin Fan Wenjie Shen State Key Laboratory of Catalysis Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalian 116023LiaoningChina State Key Laboratory of Coal Conversion Institute of Coal ChemistryChinese Academy of SciencesTaiyuan 030001ShanxiChina University of Chinese Academy of Sciences Beijing 100049China

ZSM-5 plates with a perpendicular intergrowth structure was synthesized by using a simple amine as the structure directing agent under hydrothermal conditions,in which the mother plate and the perpendicularly standing plates oriented along the(010)and(100)planes of MFI crystals,*** the crystallization process,the mother plate was initially formed on the surface of the amorphous solid gel,while a set of parallel plates perpendicularly grew on its surface,via a homogeneous nucleation *** mother plate and the perpendicular plates had a similar thickness of 100-200 nm and were characterized by considerably shortened straight and zigzag 10 member ring pores,*** unique intergrowth structure greatly facilitated the diffusion of the reactive molecules in HZSM-5 crystals during methanol conversion to hydrocarbons.

关键词： ZSM-5 Plate structure Perpendicular Intergrowth channel length Hierarchical structure Molecule diffusion