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通过聚阳离子取代策略实现压缩黄铜矿型硒化物[Rb3BaCl][In_(8)Se_(14)]以获得优异的非线性光学性能

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Science China Materials 2024年第6期67卷 2000-2007页

作者：吴帆陈文发吴子璇姜小明刘彬文郭国聪 State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou 350002China College of Chemistry and Materials Science Fujian Normal UniversityFuzhou 350007China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350108China University of Chinese Academy of Sciences Beijing 100049China Fujian College University of Chinese Academy of SciencesFuzhou 350002China

单价Ag+或Li+引入到类金刚石结构的MQ22-(M=Ga,In;Q=S,Se)阴离子基团中能合成出良好的二阶非线性光学(NLO)晶体材料.然而,这些晶体分别面临着较低的抗激光损伤阈值(LIDT)或二氧化硅易被腐蚀等缺点,严重限制了其在高功率激光应用中的实用... 详细信息

单价Ag+或Li+引入到类金刚石结构的MQ22-(M=Ga,In;Q=S,Se)阴离子基团中能合成出良好的二阶非线性光学(NLO)晶体材料.然而,这些晶体分别面临着较低的抗激光损伤阈值(LIDT)或二氧化硅易被腐蚀等缺点,严重限制了其在高功率激光应用中的实用性.在本研究中,基于类金刚石结构的ZnSe,我们采用[Se_(4)Zn_(13)]Se_(2)4→[ClRb_(3)Ba]Se_(24)非常规的聚阳离子取代策略,设计并合成了一种新型的盐包硫属化合物[Rb_(3)BaCl][In_(8)Se_(14)](1).化合物1属于压缩黄铜矿型硒化物并保持了与AgInSe_(2)相同的晶体对称性(I-42d空间群).值得注意的是,由于InSe_(4)四面体结构单元的平行排列,化合物1具有相位匹配的强二次谐波(SHG)响应(2.0倍于AgGaS_(2)@2.90μm).此外,聚阳离子[Rb_(3)BaCl]^(4+)的引入促进了光学带隙(2.02 eV)的增强,有效地避免了对2.09μm激光的双光子吸收;同时结合较低的热膨胀系数,使得化合物1表现出高的LIDT(3.2倍于AgGaS2@2.09μm).本研究验证了在类金刚石结构中进行聚阳离子取代的可行性,并成功获得了性能优异的中远红外NLO材料.

关键词： chalcogenide nonlinear optical material substitution strategy diamond-like structure structure-property relationship

Amorphous Ge-Sb-Se-Te chalcogenide films fabrication for potential environmental sensing and nonlinear photonics

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Journal of Materiomics 2022年第5期8卷 1009-1019页

作者： Tomas Halenkovic Marion Baillieul Jan Gutwirth Petr Nemec Virginie Nazabal Department of Graphic Arts and Photophysics Faculty of Chemical TechnologyUniversity of PardubiceStudentska 57353210PardubiceCzech Republic Univ Rennes CNRSISCR(Institut des Sciences Chimiques de Rennes)e UMR 6226F-35000RennesFrance

Quaternary Ge-Sb-Se-Te chalcogenide thin films were fabricated by rf magnetron sputtering from Ge_(19)Sb_(17)Se_(64-x)Te_(x)(x=5,10,15,20)sputtering targets in order to select appropriate compositions for infrared sensor and optical nonlinear applications.An influence of chemical composition and deposition parameters on the optical properties,structure and wettability was thus studied.The amorphous thin films seem to be constituted by selenide entities that can include tellurium atoms in variable proportion such as[GeSe_(4-x)Te_(x)]and[SbSe_(3-x)Te_(x)](x=0,1,2)and Ge(Sb)-Ge(Sb)bonds according to Raman spectroscopy.Contact angle measurements of the thin films showed values of 68e71for water and their surface energies in the range of~36e39 mJ$m-2 seem suitable for surface functionalization required for photonic sensor development.Furthermore,the maximum nonlinearity at the telecom wavelength with respect to the highest figure of merit value was found for the thin film with composition Ge_(19)Sb_(17)Se56Te8 having nonlinear refractive index of 28×10^(-18) m2·W^(-1).Due to their low optical bandgap energies,they may find their full interest for nonlinear optics in the mid-infrared range.Wide IR transparency in combination with high(non)linear refractive indices make these materials attractive in the field of midIR sensing and optical nonlinear devices.

关键词： chalcogenide Thin films Glass Amorphous Optical properties NLO Contact angles Sputtering Raman

Spatiotemporal modeling of mid-infrared photoluminescence from terbium(Ⅲ) ion doped chalcogenide-selenide multimode fibers

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Journal of Rare Earths 2019年第11期37卷 1157-1163页

作者： Slawomir Sujecki Lukasz Sojka Zhuoqi Tang Dinuka Jayasuriya David Furniss Emma Barney Trevor Benson Angela Seddon Telecommunications and Teleinformatics Department Wroclaw University of Science and TechnologyWroclawPoland Mid-Infrared Photonics Group George Green Institute for Electromagnetics ResearchFaculty of EngineeringThe University of NottinghamNottinghamUK

A numerical model was developed to study the time dynamics of photo luminescence emitted by Tb^3+doped multimode chalcogenide-selenide glass fibers pumped by laser light at approximately 2μm.The model consists of a set of partial differential equations(PDEs),which describe the temporal and spatial evolution of the photon density and level populations within the fiber.In order to solve numerically the PDEs a method of lines was applied.The modeling parameters were extracted from measurements and from data available in the literature.The numerical results obtained support experimental observations.In particular,the developed model reproduces the discrepancies that are observed between the photoluminescence decay curves obtained from different points along the fiber.The numerical analysis was also used to explain the source of these discrepancies.

关键词： chalcogenide glass fiber Numerical modeling Photoluminescence Mid-infrared light Rare earths

A perspective of chalcogenide semiconductor-noble metal nanocomposites through structural transformations

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Nano Materials Science 2019年第3期1卷 184-197页

作者： Danye Liu Linlin Xu Jianping Xie Jun Yang State Key Laboratory of Multiphase Complex Systems Institute of Process EngineeringChinese Academy of SciencesBeijing100190China University of Chinese Academy of Sciences No.19A Yuquan RoadBeijing100049China Department of Chemical and Biomolecular Engineering National University of Singapore4 Engineering Drive 4117585Singapore Center for Mesoscience Institute of Process EngineeringChinese Academy of SciencesBeijing100190China Zhongke Langfang Institute of Process Engineering Fenghua Road No 1Langfang Economic&Technical Development ZoneHebei Province065001China

Intense efforts have been devoted to the synthesis of heterogeneous nanocomposites consisting of chalcogenide semiconductors and noble metals,which usually exhibit enhanced properties owing to the synergistic effect between their different material domains.Tailoring the structure of the metal domains in the nanocomposites may lead to further improvements of its performance for a given application.This review therefore highlights the strategies based on a structural conversion process for the fabrication of nanocomposites consisting of chalcogenide semiconductors and noble metals with various internal structures,e.g.,hollow or cage-bell.This strategy relies on a unique inside-out diffusion phenomenon of Ag in core-shell nanoparticles with Ag residing at core or inner shell region.In the presence of sulfur or selenium precursors,the diffused Ag are converted into Ag2S or Ag2Se,which is connected with the remaining noble metal parts,forming nanocomposites consisting of silver chalcogenide and noble metal nanoparticles with hollow or cage-bell structures.We would focus on the introduction of the fundamentals,principles,electrocatalytic applications as well as perspectives of the chalcogenide semiconductor-noble metal nanocomposites derived from their core-shell precursors so as to provide the readers insights in designing efficient nanocomposites for electrocatalysis.

关键词： Nanocomposite chalcogenide Noble metal Nanoparticle Structural conversion Electrocatalysis

Low threshold fiber taper coupled rare earth ion-doped chalcogenide microsphere laser

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Chinese Physics B 2015年第4期24卷 237-240页

作者：李超然戴世勋张勤远沈祥王训四张培晴路来伟吴越豪吕社钦 Laboratory of Infrared Material and Devices Advanced Technology Reasearch Institute Ningbo University State Key Laboratory of Luminescence Materials and Devices and Institute of Optical Communication Materials South China University of Technology

We report the applications of a low-cost and environmentally friendly chalcogenide glass, 75GeS2-15Ga2S3-10CsI, in building active microsphere laser oscillators. A silica fiber taper is used as the coupling mechanism. With an 808-nm laser diode as a pump source, we show that a high-Q （-, 6× 10^4） laser mode could be obtained from a 75-μm diameter microsphere that is coupled with a 1.77-μm waist-diameter fiber taper. The threshold of the incident pump power is 1.39 mW, which is considerably lower than those of previously reported free-space coupled chalcogenide microsphere lasers. We also note an apparent enhancement in laser power generated from this chalcogenide microsphere laser.

关键词： chalcogenide microspheres laser whispering gallery modes

Simple yet extraordinary: Super-polyhedra-built 3D chalcogenide framework of Cs_(5)Ga_(9)S_(16) with excellent infrared nonlinear optical performance

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Chinese Chemical Letters 2023年第7期34卷 400-403页

作者： Hong Chen Mao-Yin Ran Sheng-Hua Zhou Xin-Tao Wu Hua Lin Qi-Long Zhu State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of MatterChinese Academy of Sciences(CAS)Fuzhou 350002China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou 350108China University of Chinese Academy of Sciences Bejing 100049China

Non-centrosymmetric chalcogenides are attracting considerable attention as highly promising infrared nonlinear optical (IR-NLO) candidates,but it is challenging to simultaneously achieve sufficient secondharmonic-generation coefficient (d_(eff)>0.5×AgGaS_(2)) and large energy gap (E_g>3.5 e V).In this work,a novel ternary chalcogenide,Cs_(5)Ga_(9)S_(16) with an ultra-wide E_gof 4.05 e V,has been successfully obtained.This sulfide belongs to the monoclinic space group Pn (No.7) with a novel 3D anionic[Ga_(9)S_(16)]^(5–)framework that is formed by super-polyhedral[Ga_(9)S_(23)]units through corner-sharing S atoms.Such a unique crystal structure displays desirable characteristics which indicate a promising IR-NLO candidate:favourable phase-matching feature,sufficient d_(eff)(0.7×AgGaS_(2)),ultrahigh laser-induced damage threshold (31.6×AgGaS_(2)) and broad transparent region (0.27-14.96μm).In addition,systematic theoretical studies and structural analysis suggest that the desirable IR-NLO performances can be attributed to the super-polyhedral building blocks.This finding may provide useful insight into the understanding and designing other high-performance IR-NLO candidates with super-polyhedral-built structures.

关键词： chalcogenide IR nonlinear optic Super-polyhedra-built framework Wide energy gap Structure-activity relationship

Ge1Sb2Te4 Based chalcogenide Random Access Memory Array Fabricated by 0.18-μm CMOS Technology

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Chinese Physics Letters 2007年第3期24卷 790-792页

作者：张挺宋志棠冯高明刘波吴良才封松林陈邦明 Laboratory of Nanotechnology Shanghai Institute of Micro-System and Information Technology Chinese Academy of Sciences Shanghai 200050 Graduate School of the Chinese Academy of Sciences Beijing 100049 Silicon Storage Technology Inc. 1171 Sonora Court Sunnyvale CA 94086 U.S.A.

Ge1Sb2Te4-based chalcogenide random access memory array, with a tungsten heating electrode of 260hm in diameter, is fabricated by 0.18-μm CMOS technology. Electrical performance of the device, as web as physical and electrical properties of GelSb2 Te4 thin film, is characterized. SET and RESET programming currents are 1.6 and 4.1 mA, respectively, when pulse width is 100 ns. Both the values are larger than those of the Ge2Sb2 Tesbased ones with the same structure and contact size. Endurance up to 106 cycles with a resistance ratio of about 100 has been achieved.

关键词： chalcogenide Technology CMOS

Charge density wave order and electron-boson coupling in ternary superconductor Bi_(2)Rh_(3)Se_(2)

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Science China(Physics,Mechanics & Astronomy) 2023年第7期66卷 120-126页

作者： Zi-Teng Liu Chen Zhang Qi-Yi Wu Hao Liu Bo Chen Zhi-Bo Yin Sheng-Tao Cui Zhe Sun Shuang-Xing Zhu Jiao-Jiao Song Yin-Zou Zhao Hong-Yi Zhang Xue-Qing Ye Fan-Ying Wu Shu-Yu Liu Xiao-Fang Tang Ya-Hua Yuan Yun-Peng Wang Jun He Hai-Yun Liu Yu-Xia Duan Jian-Qiao Meng School of Physics and Electronics Central South UniversityChangsha 410083China National Synchrotron Radiation Laboratory University of Science and Technology of ChinaHefei 230029China Department of Physics and Electronic Science Hunan University of Science and TechnologyXiangtan 411201China Beijing Academy of Quantum Information Sciences Beijing 100085China

The newly discovered ternary chalcogenide superconductor Bi_(2)Rh_(3)Se_(2) has attracted growing attention,which provides an opportunity to explore the interplay between charge density wave(CDW)order and superconductivity.However,whether the phase transition around 240 K can be attributed to the formation of CDW remains controversial.To help resolve the debate,we study the electronic structure of Bi_(2)Rh_(3)Se_(2) by angle-resolved photoemission spectroscopy,focusing on the nature of its high-temperature phase transition around 240 K.Our measurements demonstrate that the phase transition at 240 K is a second-order CDW phase transition.Our results reveal(i)a 2×2 CDW order in Bi_(2)Rh_(3)Se_(2),accompanied by the reconstruction of electronic structure,such as band folding,band splitting,and opening of CDW gaps at and away from the Fermi level;(ii)the existence of electron-boson coupling,which is manifested as an apparent kink and peak-dip-hump structure in dispersion.Our observations thus enable us to shed light on the nature of CDW order and superconductivity in Bi_(2)Rh_(3)Se_(2).

关键词： charge density wave electron-boson coupling angle-resolved photoemission spectroscopy electronic structure chalcogenide

Experimental and numerical investigation of mid-infrared laser in Pr^(3+)-doped chalcogenide fiber

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Chinese Physics B 2019年第2期28卷 257-263页

作者：陈华夏克伦刘自军王训四章向华许银生戴世勋 Laboratory of Infrared Materials and Devices Advanced Technology Research InstituteNingbo University Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province Laboratory of Glasses and Ceramics UMR CNRS 6226University of Rennes 1

We report on a chalcogenide glass fiber doped with Pr^(3+) that can be used for commercialized 1.5-μm and 2-μm laser excitations by emitting broadband 3 μm–5.5 μm fluorescence, which is extruded into a preform and then drawn into a step-index fiber. The spectroscopic properties of the fiber and glass are reported, and the mid-infrared fiber lasers are also numerically investigated. Cascade lasing is employed to increase the inversion population of the upper laser level. The particle swarm approach is applied to optimize the fiber laser parameters. The output power can reach 1.28 W at 4.89-μm wavelength, with a pump power of 5 W, excitation wavelength at 2.04 μm, Pr^(3+) ion concentration at 4.22 × 10^(25) ions/m^3,fiber length at 0.94 m, and fiber background loss at 3 dB/m.

关键词： mid-infrared fiber laser chalcogenide glass fiber rare earth doped glass fiber laser modelling