Amorphous Ge-Sb-Se-Te chalcogenide films fabrication for potential environmental sensing and nonlinear photonics
作者机构:Department of Graphic Arts and PhotophysicsFaculty of Chemical TechnologyUniversity of PardubiceStudentska 57353210PardubiceCzech Republic Univ RennesCNRSISCR(Institut des Sciences Chimiques de Rennes)e UMR 6226F-35000RennesFrance
出 版 物:《Journal of Materiomics》 (无机材料学学报(英文))
年 卷 期:2022年第8卷第5期
页 面:1009-1019页
核心收录:
学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:This work was supported by the CNRS,Brittany region(France) ANR LOUISE(ANR-15-CE04-0001-01) ANR AQUAE(ANR-21-CE04-0011) Czech Science Foundation(Project No.19-24516S)
主 题:Chalcogenide Thin films Glass Amorphous Optical properties NLO Contact angles Sputtering Raman
摘 要:Quaternary Ge-Sb-Se-Te chalcogenide thin films were fabricated by rf magnetron sputtering from Ge_(19)Sb_(17)Se_(64-x)Te_(x)(x=5,10,15,20)sputtering targets in order to select appropriate compositions for infrared sensor and optical nonlinear *** influence of chemical composition and deposition parameters on the optical properties,structure and wettability was thus *** amorphous thin films seem to be constituted by selenide entities that can include tellurium atoms in variable proportion such as[GeSe_(4-x)Te_(x)]and[SbSe_(3-x)Te_(x)](x=0,1,2)and Ge(Sb)-Ge(Sb)bonds according to Raman *** angle measurements of the thin films showed values of 68e71for water and their surface energies in the range of~36e39 mJ$m-2 seem suitable for surface functionalization required for photonic sensor ***,the maximum nonlinearity at the telecom wavelength with respect to the highest figure of merit value was found for the thin film with composition Ge_(19)Sb_(17)Se56Te8 having nonlinear refractive index of 28×10^(-18) m2·W^(-1).Due to their low optical bandgap energies,they may find their full interest for nonlinear optics in the mid-infrared *** IR transparency in combination with high(non)linear refractive indices make these materials attractive in the field of midIR sensing and optical nonlinear devices.