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Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method

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Chinese Physics B 2010年第5期19卷 536-541页

作者：杜刚刘晓彦夏志良杨竞峰韩汝琦 Institute of Microelectronics Peking University

Interface roughness strongly influences the performance of germanium metal-organic-semiconductor field effect transistors （MOSFETs）. In this paper, a 2D full-band Monte Carlo simulator is used to study the impact of interface roughness scattering on electron and hole transport properties in long- and short- channel Ge MOSFETs inversion layers. The carrier effective mobility in the channel of Ge MOSFETs and the in non-equilibriurn transport properties are investigated. Results show that both electron and hole mobility are strongly influenced by interface roughness scattering. The output curves for 50 nm channel-length double gate n and p Ge MOSFET show that the drive currents of n- and p-Ge MOSFETs have significant improvement compared with that of Si n- and p-MOSFETs with smooth interface between channel and gate dielectric. The 82% and 96% drive current enhancement are obtained for the n- and p-MOSFETs with the completely smooth interface. However, the enhancement decreases sharply with the increase of interface roughness. With the very rough interface, the drive currents of Ge MOSFETs are even less than that of Si MOSFETs. Moreover, the significant velocity overshoot also has been found in Ge MOSFETs.

关键词： carrier transport interface scattering germanium MOSFETs Monte Carlo

Regulation of the quantum barrier and carrier transport toward high-efficiency quasi-2D Dion-Jacobson tin perovskite solar cells

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Journal of Energy Chemistry 2024年第8期95卷 200-207,I0005页

作者： Huanhuan Yao Chang Shi Tai Wu Shurong Wang Mingyu Yin Liming Ding Yong Hua Feng Hao School of Materials and Energy University of Electronic Science and Technology of ChinaChengdu 611731SichuanChina College of Chemistry and Molecular Engineering Peking UniversityBeijing 100871China Yunnan Key Laboratory for Micro/Nano Materials&Technology School of Materials and EnergyYunnan UniversityKunming 650091YunnanChina Center for Excellence in Nanoscience(CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS)National Center for Nanoscience and TechnologyBeijing 100190China

Quasi-2D Dion-Jacobson(DJ)tin halide perovskite has attracted much attention due to its elimination of Van der Waals gap and enhanced environmental ***,the bulky organic spacers usually form a natural quantum well structure,which brings a large quantum barrier and poor film quality,further limiting the carrier transport and device ***,we designed three organic spacers with different chain lengths(ethylenediamine(EDA),1,3-propanediamine(PDA),and 1,4-butanediamine(BDA))to investigate the quantum barrier *** and experimental characterizations indicate that EDA with short chain can reduce the lattice distortion and dielectric confinement effect,which is beneficial to the effective dissociation of excitons and the inhibition of trap-free non-radiative *** addition,EDA cation shows strong interaction with the inorganic octahedron,realizing large aggregates in precursor solution and high-quality films with improved structural ***,femtosecond transient absorption proves that EDA cations can also weaken the formation of small n-phases with large quantum barrier to achieve effective carrier transport between different ***,the quasi-2D DJ(EDA)FA_(9)Sn_(10)I_(31)solar cells achieves a 7.07%power conversion efficiency with good environment ***,this work sheds light on the regulation of the quantum barrier and carrier transport through the chain length of organic spacer for qua si-2D DJ lead-free perovskites.

关键词： Chain lengths Organic spacers Quantum well carrier transport Lattice distortion

Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method

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Journal of Semiconductors 2010年第8期31卷 60-64页

作者：魏康亮刘晓彦杜刚韩汝琦 Institute of Microelectronics Peking University

We demonstrate a two-dimensional（2D） full-band ensemble Monte-Carlo simulator for heterostructures, which deals with carrier transport in two different semiconductor materials simultaneously as well as at the boundary by solving self-consistently the 2D Poisson and Boltzmann transport equations（BTE）.The infrastructure of this simulator,including the energy bands obtained from the empirical pseudo potential method,various scattering mechanics employed,and the appropriate treatment of the carrier transport at the boundary between two different semiconductor materials,is also *** verification and calibration,we have performed a simulation on two types of silicon-germanium（Si-Ge） heterojunctions with different doping profiles—the p-p homogeneous type and the n-p inhomogeneous *** current-voltage characteristics are simulated,and the distributions of potential and carrier density are also plotted,which show the validity of our simulator.

关键词： heterostructure Monte Carlo simulation carrier transport

Effect of dimensional expansion on carrier transport behaviors of the hexagonal Bi-based perovskite crystals

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Journal of Energy Chemistry 2022年第3期31卷 459-465,I0013页

作者： Qihao Sun Bao Xiao Leilei Ji Dou Zhao Jinjin Liu Wei Zhang Menghua Zhu Wanqi Jie Bin-Bin Zhang Yadong Xu State Key Laboratory of Solidification Processing&Key Laboratory of Radiation Detection Materials and Devices MIITSchool of Materials Science and EngineeringNorthwestern Polytechnical UniversityXi'an 710072ShaanxiChina College of Chemistry Nankai UniversityTianjin 300071China School of Microelectronics Xidian UniversityXi’an 710072ShaanxiChina

All-inorganic Cs_(3)Bi_(2)I_(9)(CBI)halide perovskites are sought to be candidate for photoelectrical materials because of their low toxicity and satisfactory ***,the discrete molecular[Bi2I9]3−clusters limit the charge-transport ***,the defect halide perovskite based on trivalent Bi^(3+)is expanded to Cs_(3)Bi_(2)I_(6)Br_(3)(CBIB).Centimeter-size CBIB single crystal(Φ15×70 mm^(3))was grown by the vertical Bridgeman *** powder X-ray diffraction analysis shows that CBIB has structure with lattice parameters of a=b=8.223Å,c=10.024Å,α=β=90°andγ=120°.The density functional theory(DFT)calculations demonstrate that the charge density distribution was enhanced after the dimensional *** enhancement of carrier transport ability of(00l)in-plane is characterized before and after dimensional *** obtained CBIB(001)exhibited an electron mobility up to 40.03 cm^(2)V^(−1)s^(−1)by time-of-flight(TOF)technique,higher than 26.46 cm^(2)V^(−1)s^(−1)of CBI(001).Furthermore,the X-ray sensitivity increases from 707.81μC Gy^(−1)cm^(−2)for CBI(001)to 3194.59μC Gy−1 cm^(−2)for CBIB(001).This research will deepen our understanding of Bi-based perovskite materials and afford more promising strategies for lead-free perovskite optoelectronic devices modification.

关键词： Bi-based perovskite Dimensional expansion carrier transport Bridgeman method Radiation detection

Tailored carrier transport Path by Interpenetrating Networks in Cathode Composite for High Performance All‑Solid‑State Li‑SeS_(2) Batteries

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Advanced Fiber Materials 2022年第3期4卷 487-502页

作者： Lei Zhou Muhammad Khurram Tufail Yaozu Liao Niaz Ahmad Peiwen Yu Tinglu Song Renjie Chen Wen Yang Key Laboratory of Cluster Science of Ministry of Education Beijing Key Laboratory of Photoelectronic/Electrophotonic Conversion MaterialsSchool of Chemistry and Chemical EngineeringBeijing Institute of TechnologyBeijing 100081People’s Republic of China State Key Laboratory for Modifcation of Chemical Fibers and Polymer Materials College of Materials Science and EngineeringDonghua UniversityShanghai 201620People’s Republic of China School of Material Science and Engineering Beijing Institute of TechnologyBeijing 100081People’s Republic of China Advance Technology Research Institute Beijing Institute of TechnologyJinan 250300People’s Republic of China Experimental Center of Advanced Materials School of Materials Science and Engineering Beijing Institute of TechnologyBeijing 100081People’s Republic of China

All-solid-state Li-SeS_(2) batteries(ASSLSs)are more attractive than traditional liquid Li-ion batteries due to superior thermal stability and higher energy ***,various factors limit the practical application of all-solid-state Li-SeS_(2) batteries,such as the low ionic conductivity of the solid-state electrolyte and the poor kinetic property of the cathode composite,resulting in unsatisfactory rate ***,we employed a traditional ball milling method to design a Li_(7)P_(2.9)W_(0.05)S_(10.85) glass–ceramic electrolyte with high conductivity of 2.0 mS cm^(−1) at room *** order to improve the kinetic property,an interpenetrating network strategy is proposed for rational cathode composite ***,the disordered cathode composite with an interpenetrating network could promote electronic and ionic conduction and intimate contacts between the electrolyte–electrode ***,the tortuosity factor of the carrier transport channel is considerably reduced in electrode architectures,leading to superior kinetic ***,assembled ASSLS exhibited higher capacity and better rate capability than its *** work demonstrates that an interpenetrating network is essential for improving carrier transport in cathode composite for high rate all-solid-state Li-SeS_(2) batteries.

关键词： All-Solid-State Li-SeS_(2)batteries Tortuosity factors carrier transport Cathode composite Interpenetrating network

Numerical analysis of the mechanism of carrier transport in organic light—emitting devces

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Chinese Physics B 2002年第10期11卷 1076-1081页

作者：彭应全台夕市等 SchoolofPhysicalScienceandTechnology LanzhouUniversityLanzhou730000China SchoolofChemistryandChemicalIndustry LanzouUniversityLanzhou730000China

The mechanism of carrier transport in organic light-emitting devices is numerically studied, on the basis of trapped-charge-limited conduction with an exponential trap distribution. The spatial distributions of the electrical potential,field and carrier density in the organic layer are calculated and analysed. Most carriers are distributed near the two electrodes, only a few of them are distributed over the remaining part of the organic layer. The carriers are accumulated near the electrodes, and the remaining region is almost exhausted of carriers. When the characteristic energy of trap distribution is greater than 0.3 eV, it leads to a reduction of current density. In order to improve the device efficiency,organic materials with minor traps and low characteristic energy should be chosen. The diffusion current is the dominant component near the injection electrode, whereas the drift current dominates the remaining region of the organic layer.

关键词： organic light-emitting device carrier transport numerical analysis

Cu gradient design to attain high efficient solution-processed CuIn（S,Se）2 solar cells

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Journal of Energy Chemistry 2025年第2期101卷 213-222页

作者： Xuejun Xu Rutao Meng Yue Liu Han Xu Jianpeng Li Yi Zhang Institute of Photoelectronic Thin Film Devices and Technology State Key Laboratory of Photovoltaic Materials and Cells and Engineering Research Center of Thin Film Optoelectronics Technology Ministry of Education Nankai University

Solution-processed chalcopyrite solar cells are widely regarded as a promising alternative method in reducing the cost compared with vacuum-based *** is noted that the absorber layer usually needs to be prepared under a high insert pressure（～1.6 atm） to suppress element loss or under a mild pressure but additional surface etching is needed for fabricating high efficient solar ***,a copper gradient structured precursor is proposed to prepare CuIn（S,Se）2（CISSe） film under a mild pressure（1.1 atm）.The designed gradient Cu not only promotes crystal grain growth and tailors the defects,but also avoids the surface etching of the formed CISSe film for the fabrication of high efficient solar ***,Cu gradient design decreases the conduction band offset of heterojunction,boosting the carriers transport across the p-n ***,a 13,35% efficient CISSe solar cell,comparable to the high efficient CISSe solar cell prepared by this method under high pressure or with film surface etching,is *** work provides a facile pathway to fabricate high efficient solution-processed chalcopyrite solar cell,avoiding high selenization pressure and film etching,and shows huge potential for solutionprocessed copper-based solar cells.

关键词： Band alignment carrier transport CISSe Crystal grain growth Cu gradient Defect passivation

In situ seed layer bandgap engineering leading to the conduction band offset reversion and efficient Sb2Se3 solar cells with high open-circuit voltage

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Journal of Energy Chemistry 2025年第2期101卷 201-212页

作者： Yanting Jiang Weiyu Wang Zhirong Chen Zhenyu Fang Qiqiang Zhu Qiao Zheng Jionghua Wu Hui Deng Weihuang Wang Shuying Cheng Fuzhou University Institute of Micronano Devices & Solar Cells College of Physics & Information Engineering Jiangsu Collaborative Innovation Center for Photovoltaic Science and Engineering

Sb2Se3solar cells have achieved a power conversion efficiency（PCE） of over 10%.However,the serious open-circuit voltage deficit(VOC-deificit),induced by the hard-to-control crystal orientation and heterojunction interface reaction,limits the PCE of vapor transport deposition（VTD） processed Sb2Se3solar *** overcome the VOC-deficit problem of VTD processed Sb2Se3solar cells,herein,an in-situ bandgap regulation strategy is innovatively proposed to prepare a wide band gap Sb2（S,Se）3seed layer（WBSL） at CdS/Sb2Se3heterojunction interface to improve the PCE of Sb2Se3solar *** analysis results show that the introduced Sb2（S,Se）3seed layer can enhance the [001] orientation of Sb2Se3thin films,broaden the band gap of heterojunction interface,and realize a "Spike-like" conduction band alignment withΔEc=0.11 *** addition,thanks to the suppressed CdS/Sb2Se3interface reaction after WBSL application,the depletion region width of Sb2Se3solar cells is widened,and the quality of CdS/Sb2Se3interface and the carrier transporting performance of Sb2Se3solar cells are significantly improved as ***,the harmful Se vacancy defects near the front interface of Sb2Se3solar cells can be greatly diminished by ***,the PCE of Sb2Se3solar cells is improved from 7.0% to 7.6%;meanwhile the VOCis increased to 466 mV which is the highest value for the VTD derived Sb2Se3solar *** work will provide a valuable reference for the interface and orientation regulation of antimony-based chalcogenide solar cells.

关键词： Band gap alignment carrier transport Crystal orientation Open circuit voltage deficit Seed-layer

Structural and electrical properties of laser-crystallized nanocrystalline Ge films and nanocrystalline Ge/SiN_x multilayers

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Chinese Physics B 2013年第10期22卷 486-492页

作者：李悰徐骏李伟江小帆孙胜华徐岭陈坤基 National Laboratory of Solid State Microstructures School of Physicsand School of Electronic Science and EngineeringNanjing University

Nanocrystalline Ge （nc-Ge） single layers and nc-Ge/SiNx multilayers are prepared by laser annealing amorphous Ge （a-Ge） films and a-Ge/SiNx multilayers. The microstructures as well as the electrical properties of laser-crystallized samples are systematically studied by using various techniques. It is found that the optical band gap of nc-Ge film is reduced compared with its amorphous counterpart. The formed nc-Ge film is of p-type, and the dark conductivity is enhanced by 6 orders for an nc-Ge single layer and 4 orders for a multilayer. It is suggested that the carrier transport mechanism is dominant by the thermally activation process via the nanocrystal, which is different from the thermally annealed nc-Ge sample at an intermediate temperature. The carrier mobility of nc-Ge film can reach as high as about 39.4 cm2.V ^-1 .s^-1, which indicates their potential applications in future nano-devices.

关键词： nanocrystalline Ge microstructure carrier transport mobility