Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells

作     者：刘诗涛 全知觉 王立 

作者机构：School of Materials Science and Engineering Nanchang University Nanchang 330031 China National Engineering Technology Research Center for LED on Si Substrate Nanchang University Nanchang 330047 China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2017年第26卷第3期

页      面：558-563页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61564007 and 11364034) the Sci-Tech Support Plan of Jiangxi Province,China(Grant No.20141BBE50035) 

主　　题：V-shaped pits InGaN/GaN multiple-quantum-well solar cells carrier transport 

摘      要：Carrier transport via the V-shaped pits （V-pits） in InGaN/GaN multiple-quantum-well （MQW） solar cells is numer- ically investigated. By simulations, it is found that the V-pits can act as effective escape paths for the photo-generated carriers. Due to the thin barrier thickness and low indium composition of the MQW on V-pit sidewall, the carriers entered the sidewall QWs can easily escape and contribute to the photocurrent. This forms a parallel escape route for the carries generated in the fiat quantum wells. As the barrier thickness of the fiat MQW increases, more carriers would transport via the V-pits. Furthermore, it is found that the V-pits may reduce the recombination losses of carriers due to their screening effect to the dislocations. These discoveries are not only helpful for understanding the carrier transport mechanism in the InGaN/GaN MQW, but also important in design of the structure of solar cells.