检索结果-南通市图书馆

Multifunctional dual-anion compensation of amphoteric glycine hydrochloride enabled highly stable perovskite solar cells with prolonged carrier lifetime

引用

Nano Research 2024年第6期17卷 5131-5137页

作者： Lina Qin Mengfei Zhu Yuren Xia Xingkai Ma Daocheng Hong Yuxi Tian Zuoxiu Tie Zhong Jin State Key Laboratory of Coordination Chemistry MOE Key Laboratory of Mesoscopic ChemistryMOE Key Laboratory of High Performance Polymer Materials and TechnologyJiangsu Key Laboratory of Advanced Organic MaterialsSchool of Chemistry and Chemical EngineeringNanjing UniversityNanjing 210023China Nanjing Tieming Energy Technology Co.Ltd. Nanjing 210093China Suzhou Tierui New Energy Technology Co.Ltd. Suzhou 215228China

Throughout years,the two-step spin-coating process is the most common method to prepare organic lead halide perovskite ***,the short reaction time of dropping the solution at the second step means that PbI2 cannot be completely transformed into perovskite *** solve this problem,we report the introduction of glycine hydrochloride(GlyHCl)into the second step of the two-step spin-coating process to prepare a FA_(0.9)MA_(0.1)PbI_(3-x)%-GlyHCl perovskite material(namely FAMA-x%-GlyHCl,where FA=formamidinium,MA=methylammonium,and x%stands for the molar ratio of GlyHCl added in FA iodide/MA iodide(FAI/MAI)precursor solution).The Cl−ion in GlyHCl assists the formation ofα-phase perovskite,and the-COO−group coordinates with Pb2+cation in a bridging way,making up for the anion vacancy in perovskite lattice and resulting in high absorption *** perovskite solar cells(PSCs)based on FAMA-9%-GlyHCl achieve a long carrier lifetime(527.0 ns),a photoelectric conversion efficiency(PCE)of 19.40%and good thermal stability,maintaining 85.8%of the initial PCE after being continuously heated at 60℃for 500 *** study helps to solve the problem of incomplete reaction in the two-step spin-coating process and puts forward a new solution for preparing high coverage perovskite films with large grain size.

关键词： dual-anion compensation glycine hydrochloride perovskite solar cells carrier lifetime thermal and moisture stability

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Influence of optical interference and carrier lifetime on the short circuit current density of organic bulk heterojunction solar cells

引用

Chinese Physics B 2009年第1期18卷 349-356页

作者：游海龙张春福 School of Microelectronics Xidian University Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices Department of Electrical and Computer Engineering National University of SingaporeSingapore 117576

Based on simple analytical equations, short circuit current density （Jsc） of the organic bulk heterojunction solar cells has been calculated. It is found that the optical interference effect plays a very important role in the determination of Jsc; and obvious oscillatory behaviour of Jsc was observed as a function of thickness. At the same time, the influence of the carrier lifetime on Jsc also cannot be neglected. When the carrier lifetime is relatively short, Jsc only increases at the initial stage and then decreases rapidly with the increase of active layer thickness. However, for a relatively long carrier lifetime, the exciton dissociation probability must be considered, and Jsc behaves wave-like with the increase of active layer thickness. The validity of this model is confirmed by the experimental results.

关键词： organic solar cells short circuit current density optical interference carrier lifetime

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

A novel method for measuring carrier lifetime and capture cross-section by using the negative resistance I-V characteristics of a barrier-type thyristor

引用

Journal of Semiconductors 2010年第8期31卷 65-69页

作者：李海蓉李思渊 Institute of Microelectronics Lanzhou University

A brand new and feasible method for measuring the carrier lifetime and capture cross-section of a barrier by using the negative resistance segment of the I-V characteristics of a barrier-type thyristor（BTH） is put *** measuring principle and calculation method are *** BTH samples are experimentally measured and the results are analyzed in detail.

关键词： carrier lifetime capture cross-section barrier-type thyristor

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Effect of temperature on the intensity and carrier lifetime of an AlGaAs based red light emitting diode

引用

Journal of Semiconductors 2013年第9期34卷 1-5页

作者： P.Dalapati N.B.Manik A.N.Basu Condensed Matter Physics Research Center Department of PhysicsJadavpur University

The influence of temperature on the intensity of light emitted by as well as the carrier life time r of a standard A1GaAs based light emitting diode has been investigated in the temperature range from 345 to 136 K. The open-circuit voltage decay （OCVD） technique has been used for measured the carrier lifetime. Our experimental results reveal a 16% average increase in intensity and a 163.482-19.765 ns variation in carrier lifetime in the above temperature range. Further, theoretical and experimental analysis show that for negligible carrier density the intensity is inversely proportional to carrier lifetime for this sample.

关键词： LED low temperature intensity ideality factor carrier lifetime

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

carrier lifetime and chaotic characteristics of semiconductor lasers with optical feedback

Carrier lifetime and chaotic characteristics of semiconducto...

引用

Asia-pacific Optical Communications 2004

作者： Yi Zhanga Guangqiong Xiaa Yunxia Fanb Dongzhou Zhonga Zhengmao Wu*a aSchool of Physics Southwest Normal University Chongqing 400715 China bSchool of Science Southwest University of Science and Technology Mianyang 621002 China

The carrier lifetime is usually treated as a constant (called as the constant carrier lifetime assumption (CCLA)) du modeling theoretically the chaotic behaviors of semiconductor lasers. In this paper

关键词： Semiconductor laser optical feedback optical chaos carrier lifetime

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

Impacts of hydrogen annealing on the carrier lifetimes in p-type 4H-SiC after thermal oxidation

引用

Chinese Physics B 2023年第6期32卷 60-65页

作者：张锐军洪荣墩韩景瑞丁雄杰李锡光蔡加法陈厦平傅德颐林鼎渠张明昆吴少雄张宇宁吴正云张峰 Department of physics Xiamen universityXiamen 361005China Guangdong Tianyu Semiconductor Co. LtdDongguan 523808China

Thermal oxidation and hydrogen annealing were applied on a 100μm thick Al-doped p-type 4H-Si C epitaxial wafer to modulate the minority carrier lifetime,which was investigated by microwave photoconductive decay(μ-PCD).The minority carrier lifetime decreased after each thermal *** the contrary,with the hydrogen annealing time increasing to3 hours,the minority carrier lifetime increased from 1.1μs(as-grown)to 3.14μs and then saturated after the annealing time reached 4 *** increase of surface roughness from 0.236 nm to 0.316 nm may also be one of the reasons for limiting the further improvement of the minority carrier ***,the whole wafer mappings of minority carrier lifetimes before and after hydrogen annealing were measured and *** average minority carrier lifetime was up to 1.94μs and non-uniformity of carrier lifetime reached 38%after 4-hour hydrogen *** increasing minority carrier lifetimes could be attributed to the double mechanisms of excess carbon atoms diffusion caused by selective etching of Si atoms and passivation of deep-level defects by hydrogen atoms.

关键词： 4H-SiC carrier lifetime hydrogen annealing

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Benzotriazole derivative inhibits nonradiative recombination and improves the UV-stability of inverted MAPbI_(3) perovskite solar cells

引用

Journal of Energy Chemistry 2022年第2期31卷 592-599页

作者： Xiaoyu Deng Zhiyuan Cao Chengbo Li Shurong Wang Feng Hao School of Materials and Energy University of Electronic Science and Technology of ChinaChengdu 611731SichuanChina

Suppressing the nonradiative recombination in the bulk and surface of perovskite film is highly desired to improve the power conversion efficiency(PCE)and stability of halide perovskite solar cells(PSCs).In this study,a benzotriazole derivative(6-chloro-1-hydroxybenzotriazole,Cl-HOBT)is applied to improve the crystallinity and reduce the trap density of methylammonium lead iodide(MAPbI3)perovskite ***,incorporation of Cl-HOBT elongates the photoluminescence carrier lifetime and chargerecombination lifetime,implying the trap-assisted nonradiative recombination is greatly ***,the improved energy level alignment and enhanced built-in potential are conducive to the charge carrier separation and transfer process with ***,a PCE of 20.27%and an open-circuit voltage(Voc)of 1.09 V are achieved for the inverted MAPbI3 PSCs,along with an 85%maintaining of the initial PCE under stored at relative humidity of 20%for 500 ***,the existence of Cl-HOBT could inhibit the formation of Pb0 defect under prolonged UV illumination to retard the degradation of perovskite *** is believed that this study paves a novel path for the realization of highefficiency PSCs with UV-stability.

关键词： Additive engineering Charge recombination carrier lifetime Defect Mobility

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

SiO2 passivation layer grown by liquid phase deposition for silicon solar cell application

引用

Frontiers in Energy 2017年第1期11卷 52-59页

作者： Yanlin CHEN Sihua ZHONG Miao TAN Wenzhong SHEN Institute of Solar Energy and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education) Department of Physics and Astronomy Shanghai Jiao Tong University Shanghai 200240 China Collaborative Innovation Center of Advanced Microstructures Nanjing 210093 China

Surface passivation is one of the primary requirements for high efficient silicon solar cells. Though the current existed passivation techniques are effective, expensive equipments are required. In this paper, a comprehensive understanding of the SiO2 passivation layer grown by liquid phase deposition （LPD） was presented, which was cost-effective and very simple. It was found that the post-annealing process could significantly enhance the passivation effect of the LPD SiO2 film. Besides, it was revealed that both chemical passivation and field-effect passivation mechanisms played important roles in outstanding passivation effect of the LPD SiO2 film through analyzing the minority carrier lifetime and the surface recombination velocity of n-type and p-type silicon wafers. Although the deposition parameters had little influence on the passivation effect, they affected the deposition rate. Therefore, appropriate deposition para- meters should be carefully chosen based on the compromise of the deposition rate and fabrication cost. By utilizing the LPD SiO2 film as surface passivation layer, a 19.5%-efficient silicon solar cell on a large-scale wafer （156 mm × 156 mm） was fabricated.

关键词： Si solar cell passivation SiO2 liquid phasedeposition carrier lifetime

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

High speed optical modulation of terahertz waves using annealed silicon wafer

引用

Chinese Optics Letters 2014年第8期12卷 76-78页

作者：李涛杨冬晓王健 Department of Information Science and Electronic Engineering Zhejiang University Research Center for Terahertz Technology Zhejiang University

Modulation properties of terahertz waves going through a light excited high resistivity silicon wafer are analyzed and measured. Free carrier lifetime of the silicon wafer affects the modulation depth and speed of the terahertz wave. The lifetime is reduced to less than 1 〉s by thermal processing for high speed modulation. Experimental results show that the response time and modulation depth of the proposed modulating structure are close to 1 〉s and 51%, respectively.

关键词： carrier lifetime Modulation Silicon Silicon wafers

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

carrier diffusion coefficient is independent of defects in CH_(3)NH_(3)PbBr_(3) single crystals:Direct evidence

引用

Journal of Energy Chemistry 2021年第7期30卷 441-445页

作者： Chunyi Zhao Qi Sun Rongrong Cui Jing Leng Wenming Tian Shengye Jin State Key Laboratory of Molecular Reaction Dynamics and the Dynamic Research Center for Energy and Environmental Materials Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalianChina University of Chinese Academy of Sciences Beijing 100049China

Organolead halide perovskite solar cells have attracted extensive interests in recent years. Thanks to innovations in materials process and technology, the power conversion efficiency (PCE) of perovskites-based solar cells increases from 3.8% to 25.2%[1–4].In evaluating the quality of perovskite materials, a few key photophysical properties such as the lifetime, mobility and diffusion length of photogenerated carriers are usually measured.

关键词： Perovskite Defects Charge mobility carrier lifetime Diffusion length

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：