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Chinese Physics B 2019年第6期28卷 472-476页

作者：温正欣张峰申占伟陈俊何亚伟闫果果刘兴昉赵万顺王雷孙国胜曾一平 Key Laboratory of Semiconductor Material Sciences Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049China Department of Physics Xiamen UniversityXiamen 361005China

10-kV 4 H–SiC p-channel insulated gate bipolar transistors(IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2.25 mm^2 with a die size of 3 mm× 3 mm. A step space modulated junction termination extension(SSM-JTE) structure is introduced and fabricated to improve the blocking performance of the IGBTs.The SiC p-channel IGBTs with SSM-JTE termination exhibit a leakage current of only 50 nA at-10 kV. To improve the on-state characteristics of SiC IGBTs, the hexagonal cell(H-cell) structure is designed and compared with the conventional interdigital cell(I-cell) structure. At an on-state current of 50 A/cm^2, the voltage drops of I-cell IGBT and H-cell IGBT are10.1 V and 8.3 V respectively. Meanwhile, on the assumption that the package power density is 300 W/cm^2, the maximum permissible current densities of the I-cell IGBT and H-cell IGBT are determined to be 34.2 A/cm^2 and 38.9 A/cm^2 with forward voltage drops of 8.8 V and 7.8 V, respectively. The differential specific on-resistance of I-cell structure and H-cell structure IGBT are 72.36 m?·cm^2 and 56.92 m?·cm^2, respectively. These results demonstrate that H-cell structure silicon carbide IGBT with SSM-JTE is a promising candidate for high power applications.

关键词： silicon carbide power device insulated gate bipolar transistors(IGBTs) high voltage

Fatigue Behaviour of Silicon carbide and Fly Ash Dispersion Strengthened High Performance Hybrid Al 5083 Metal Matrix Composites

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Journal of Minerals and Materials Characterization and Engineering 2017年第5期5卷 274-287页

作者： N. Santhosh U. N. Kempaiah Ganesh Sajjan Ashwin C. Gowda Department of Mechanical Engineering University Visvesvaraya College of Engineering Bangalore University Bangalore India Department of Aeronautical Engineering Nitte Meenakshi Institute of Technology Bangalore India Department of CAE VIAT VTU - PG Centre Muddenahalli India

Fatigue is a major issue concerning the use of aluminium composites in structural applications. Fatigue leads to weakening of material majorly due to the strain bands formed in the material when it is subjected to repeated loading;the damage that occurs due to fatigue is a progressive and localized one. The fatigue may occur at a stress limit much lesser than the ultimate stress limit of the composite specimen. Henceforth in the current work, fatigue behaviour of silicon carbide and fly ash dispersion strengthened high performance hybrid Al 5083 metal matrix composites are evaluated. The main purpose of fatigue characterisation is to distinctly evaluate the life cycle of components that are fabricated from metal matrix composites and eventually develop a framework model for the significant study of fatigue strength of the structure with persistent striations all along the interstitials of aluminium- silicon carbide-fly ash interfaces. Fatigue is a stochastic process rather than a deterministic one that gives a considerable scatter, even among samples of similar composition with the tests carried out in some of the critically controlled environments. Hence there is a need for statistical validation of the results to authenticate the data collected. Thus in the current work, analysis of variance is carried out to establish the authenticity of the results and validate them. The results and plots are presented with suitable rationale and inferences.

关键词： Fatigue Aluminium Silicon carbide Fly Ash Statistical Validation

Calcium carbide Plants Closure in Shenmu

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China Chemical Reporter 2010年第21期21卷 15-15页

To complete its task of energy conservation andpollution reduction,the Shenmu county governmentclosed 31 calcium carbide plants in its regionin Shaanxi province from October 21st. Asof the end of 2009,Shaanxi province... 详细信息

关键词： carbide county contributing conservation nationwid

Yinglite Expands Calcium carbide Capacity

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China Chemical Reporter 2009年第31期20卷 15-15页

Two sets of calcium carbide furnaces of Western PVC Company Limited,in which Ningxia Yinglite Chemicals Co., Ltd. holds a share of 84.47%,officially came on stream On October 12th.When full operational, the project is able to provide 108 000 tons ofcalcium carbide annually as raw material for its 200 000 t/a PVC projectand 170 000 t/a caustic soda project, and the company’s total capacity ofcalcium carbide will reach 500 000 t/a.

关键词： carbide annually holds operational

On the application of calcium carbide slag as CO_2 absorbent

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Journal of Chongqing University 2015年第4期14卷 119-126页

作者：伊元荣 CHEN Fei CHANG Jie-shan College of Resources and Environmental Sciences Xinjiang University China University of Mining & Technology

Calcium carbide slag, generated in the hydrolysis process of calcium carbide, is an potential carbon capture reagent because its main ingredient is Ca(OH)_2. Calcium carbide slag, a by-product of a resin factory was used as carbon capture reagent. The change of p H and electrical conductivity(EC) of the calcium carbide slag slurry with different solid-to-liquid ratios, as well as the capture efficiency and dynamics under different temperatures and flow rates of CO_2 were studied. The properties of solid were characterized with XRD, TG-DTA, SEM and FT-IR before and after capturing carbon. The results show that the change of p H and EC were greater with low solid-to-liquid ratio than that with high solid-to-liquid ratio. The analysis of XRD and SEM show that the content of Ca CO_3 increased significantly, which improved that Ca(OH)_2 and free Ca O were reacted with CO_2. The results of TG-DTA and FT-IR show that the physicochemical properties and microstructure of the slag changed after capturing CO_2 because of the increase of Ca CO_3 content. All the results mentioned above improve the feasibility of utilizing calcium carbide slag to capture CO_2 and offer a practical way for carbon emission reduction and disposal of wasted calcium carbide slag.

关键词： high-calcium sludge calcium carbide slag carbonization dynamics

Experimental Study and Thermodynamic Analysis of High Temperature Interactions between Boron carbide and Liquid Metals

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Engineering（科研） 2014年第13期6卷 849-868页

作者： Michael Aizenshtein Natalya Froumin Nachum Frage Department of Materials NRC-Negev Beer-Sheva Israel Department of Material Engineering Ben-Gurion University Beer-Sheva Israel

Fabrication of MCCs (Metal Ceramic Composites) and ceramic brazing requires improved wetting properties are often absent in various ceramic/metals systems. This report summarizes a comprehensive study concerning the wetting properties of boron carbide in contact with non-reactive metals such as Cu, Au, Ag, and Sn. In order to improve wetting, three different reactive elements were added to the melts;Si, which has relatively high affinity to C, leads to SiC formation and changes the stoichiometric boron carbide composition (B4C) towards lower carbon content;Ti, which displays high affinity to B, leads to TiB2 formation and free carbon precipitation at the interface;and finally, Al, which forms borocarbide phases at the interface. It was found that Cu is unusual with respect to boron carbide compared the other non-reactive metals. The most important difference is its ability to dissolve ~25 at% of B, which makes B adequate as an additive to Cu in addition to Si, Ti, and Al. When boron was used as an alloying element, its effect on wetting behavior was attributed to altering the boron carbide composition in contact with boron-containing melts. It was concluded that the most important properties of boron carbide that affect wetting phenomena are the relatively low chemical stability and the existence of a wide composition range (B4C-B10C). The first property determines the possibility of boron carbide to react with liquid metals (by dissolution or formation of new phases) and the second offers an additional degree of freedom to improve its wetting by changing the composition of the ceramic phase.

关键词： Boron carbide Titanium Diboride Silicon carbide Metals Wetting Interface

Preparation of Microcapsules Containing Phase Change Material and Silicon carbide Powder with Interfacial Polycondensation Reaction Method

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Materials Sciences and Applications 2015年第3期6卷 251-262页

作者： Ryo Morita Natsukaze Saito Yoshinari Taguchi Masato Tanaka Graduate School of Science and Technology Niigata University Niigata Japan

The fundamental experiments were performed to establish the operational conditions required to prepare the microcapsules containing paraffin wax as a phase change material (PCM) and SiC powder with the interfacial polycondensation reaction. It was investigated how SiC powder affected a few characteristics of microcapsules such as the diameters of microcapsules, latent heat storage density, thermal responsibility and supercooling. In the experiment, the concentration of oil soluble surfactant, the revolution speed of impeller for preparing the (O/W) emulsion and the added weight of SiC powder were changed stepwise. The microcapsules containing PCM in which SiC powder was dispersed could be prepared well and characterized. The diameters of microcapsules increased by containing SiC powder and the content of SiC powder could be increased by performing surface modification of SiC powder. Latent heat storage density decreased with the content of SiC powder. Supercooling of PCM and thermal responsibility could be improved to some degree by containing SiC powder.

关键词： PCM Microcapsule Latent Heat Storage Silicon carbide Interfacial Polycondensation Reaction Paraffin Wax Thermal Composite

Room Temperature and Reduced Pressure Chemical Vapor Deposition of Silicon carbide on Various Materials Surface

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Advances in Chemical Engineering and Science 2014年第4期4卷 389-395页

作者： Hitoshi Habuka Asumi Hirooka Kohei Shioda Masaki Tsuji Department of Chemical and Energy Engineering Yokohama National University Yokohama Japan

At room temperature, 300 K, silicon carbide film was formed using monomethylsilane gas on the reactive surface prepared using argon plasma. Entire process was performed at reduced pressure of 10 Pa in the argon plasma etcher, without a substrate transfer operation. By this process, the several-nanometer-thick amorphous thin film containing silicon-carbon bonds was obtained on various substrates, such as semiconductor silicon, aluminum and stainless steel. It is concluded that the room temperature silicon carbide thin film formation is possible even at significantly low pressure, when the substrate surface is reactive.

关键词： Silicon carbide Monomethylsilane Chemical Vapor Deposition Room Temperature Reduce Pressure

Effect of Silicon carbide and Titanium Hydride on the Foamability of Aluminum Alloy (6061)

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Journal of Materials Science and Chemical Engineering 2017年第6期5卷 1-11页

作者： Mohammad M. Hailat Department of Chemical Engineering Albalqa Applied University Alhuson Jordan

Aluminum foam is a light weight material with good mechanical and energy absorption properties. In this study, aluminum foam composite was fabricated using aluminum powder 6061 and silicon carbide (SiC) powder. Titanium hydride (TiH2) was used as the foaming agent. Cold compact followed by hot pressing (sintering) was used to produce the composite precursor. Foaming was carried out, following the sintering process, by heating the aluminum composite precursor to a temperature above the melting point of aluminum (Al). The linear expansion of the foam and the percent porosity were found to increase as the SiC percentage decreased from 10 to 4%, whereas the density got lower. The percent porosity and linear expansion were both found to increase as the percentage of the foaming agent was increased from 0.5 to 1.5%. Compression stress was evaluated for two different porosity values (40% and 47%), and found to be higher for the samples with lower percent porosity at the same strain value. Effect of shape memory alloy fiber, made of nickel and titanium (NiTi), on the mechanical properties was also investigated. The compression stress was higher, in the densification region, for the samples in which NiTi was used.

关键词： Aluminum Foam Composite Silicon carbide Titanium Hydride

Fabrication of Tungsten carbide Films by Filtered Pulse Arc Deposition with Cemented Tungsten carbide Cathodes

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Materials Sciences and Applications 2017年第13期8卷 966-978页

作者： Ryo Isono Tsuyoshi Tanimoto Yushi Iijima Toru Harigai Yoshiyuki Suda Hirofumi Takikawa Satoru Kaneko Toyohashi University of Technology Aichi Japan Kanagawa Institute of Industrial Science and Technology Kanagawa Japan

Tungsten carbide films (W-C films) were fabricated on silicon substrates by using the filtered pulse arc deposition (FPAD) method. Two types of cemented tungsten carbide (WC) were used as cathode, one containing Co and the other Ti, which were used as binders for forming the cathode shape. The films were fabricated by varying the pulse arc current and substrate bias voltage. The discharge, deposition and film properties were investigated under these deposition conditions. The cathode wear amount when using WC-Co (WC cathode containing Co) was found to be smaller than that measured when WC-Ti (WC cathode containing Ti) was used. The W-C film thickness was approximately 30 - 40 nm under all conditions, except when the pulse arc current was 50 A and the film thickness, was approximately 10 nm. Compared to the WC-Ti, the consumption of cathode material is suppressed in the WC-Co, indicating that the efficiency for film preparation of the latter is good. From the X-ray diffraction analysis, the crystalline phase of W-C films fabricated using WC-Co and WC-Ti were observed as W2C and WC1-x, respectively, indicating that different crystalline phases could be fabricated using different cathodes. From the X-ray photoelectron spectroscopy analysis, the oxidation layer formed by air exposure was observed to exclusively exist on the W-C film surface. Moreover, almost all oxygen in the oxidation layer bonded with tungsten.

关键词： Cemented Tungsten carbide Cathode Thin Film Filtered Pulse Arc Deposition