Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension

作     者：Zheng-Xin Wen Feng Zhang Zhan-Wei Shen Jun Chen Ya-Wei He Guo-Guo Yan Xing-Fang Liu Wan-Shun Zhao Lei Wang Guo-Sheng Sun Yi-Ping Zeng 温正欣;张峰;申占伟;陈俊;何亚伟;闫果果;刘兴昉;赵万顺;王雷;孙国胜;曾一平

作者机构：Key Laboratory of Semiconductor Material SciencesInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic TechnologyUniversity of Chinese Academy of SciencesBeijing 100049China Department of PhysicsXiamen UniversityXiamen 361005China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2019年第28卷第6期

页      面：472-476页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the National Basic Research Program of China(Grant No.2015CB759600) the Science Challenge Project,China(Grant No.TZ2018003) the National Natural Science Foundation of China(Grant Nos.61474113,61574140,and 61804149) the Beijing NOVA Program,China(Grant Nos.2016071and Z181100006218121) the Beijing Municipal Science and Technology Commission Project,China(Grant No.Z161100002116018) the Youth Innovation Promotion Association of Chinese Academy of Sciences(Grant No.2012098) 

主　　题：silicon carbide power device insulated gate bipolar transistors(IGBTs) high voltage 

摘      要：10-kV 4 H–SiC p-channel insulated gate bipolar transistors(IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2.25 mm^2 with a die size of 3 mm× 3 mm. A step space modulated junction termination extension(SSM-JTE) structure is introduced and fabricated to improve the blocking performance of the *** SiC p-channel IGBTs with SSM-JTE termination exhibit a leakage current of only 50 nA at-10 kV. To improve the on-state characteristics of SiC IGBTs, the hexagonal cell(H-cell) structure is designed and compared with the conventional interdigital cell(I-cell) structure. At an on-state current of 50 A/cm^2, the voltage drops of I-cell IGBT and H-cell IGBT are10.1 V and 8.3 V respectively. Meanwhile, on the assumption that the package power density is 300 W/cm^2, the maximum permissible current densities of the I-cell IGBT and H-cell IGBT are determined to be 34.2 A/cm^2 and 38.9 A/cm^2 with forward voltage drops of 8.8 V and 7.8 V, respectively. The differential specific on-resistance of I-cell structure and H-cell structure IGBT are 72.36 m?·cm^2 and 56.92 m?·cm^2, respectively. These results demonstrate that H-cell structure silicon carbide IGBT with SSM-JTE is a promising candidate for high power applications.