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Chinese Physics B 2018年第10期27卷 584-589页

作者： Zhi-Qi Kou Yu Tang Li-Ping Yang Fei-Yu Yang Wen-Jun Guo College of Science University of Shanghai for Science and TechnologyShanghai 200093China

A series of white phosphorescent OLED devices with buffer layer and multiple dopant structure is investigated in order to obtain better electro-optic performances and color stability. The color coordinate and color stability are related to the location of multiple dopants layer, and the optimized location can compensate for the change of the blue emission intensity under a high voltage and stabilize the spectrum. The electro-optic performances and color stability can be further improved by changing the composition and thickness of the buffer layer between the emitting layer and the electron transport *** device B2, the distance from multiple dopant layer to buffer layer is 2 nm and the thickness of buffer layer is 5 nm,the maximum luminance, current density, and power efficiency can reach 9091 cd/m^2, 364.5 mA/cm^2, and 26.74 lm/W,respectively. The variation of international commission on the illumination（CIE） coordinate of device B2 with voltage increasing from 4 V to 7 V is only（0.006, 0.004）.

关键词： organic light emitting diodes multiple dopants layer buffer layer color stability

Role of buffer layer in electronic structures of iron phthalocyanine molecules on Au(111)

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Chinese Physics B 2010年第9期19卷 25-30页

作者：孙家涛潘理达胡昊杜世萱高鸿钧 Nanoscale Physics and Devices Laboratory Institute of PhysicsChinese Academy of Sciences

We investigate the electronic structures of one and two monolayer iron phthalocyanine （FePc） molecules on Au（111） surfaces. The first monolayer FePc is lying flat on the Au（111） substrate, and the second monolayer FePc is tilted at -15° relative to the substrate plane along the nearest neighbour [101] direction with a lobe downward to the central hole of the unit cell in the first layer. The structural information obtained by first-principles calculations is in agreement with the experiment results. Furthermore, it is demonstrated that the electronic structures of FePc molecules in one-monolayer FePc/Au（111） system are perturbed significantly, while the electronic structures of FePc molecules in the second monolayer in two-monolayer FePc/Au（111） system remain almost unchanged due to the screening of the buffer layer on Au（111）.

关键词： iron phthalocyanine electronic structure calculations buffer layer

Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer

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Journal of Semiconductors 2011年第9期32卷 46-49页

作者：郑宏程晓曼田海军赵赓 Institute of Material Physics Key Laboratory of Display Material and Photoelectric DevicesMinistry of EducationTianjin University of Technology Institute of Material Physics Key Laboratory of Display Material and Photoelectric DevicesMinistry of Education.Tianjin University of Technology School of Science Tianjin University of Technology

We have investigated the properties of C60-based organic field effect transistors（OFETs） with a tris（8- hydroxyquinoline） aluminum（Alq3） buffer layer inserted between the source/drain electrodes and the active material. The electrical characteristics of OFETs are improved with the insertion of Alq3 *** peak field effect mobility is increased to 1.28×10^（-2） cm^2/（V·s） and the threshold voltage is decreased to 10 V when the thickness of the Alq3 is 10 *** reason for the improved performance of the devices is probably due to the prevention of metal atoms diffusing into the C60 active layer and the reduction of the channel resistance in Alq3 films.

关键词： organic field effect transistors buffer layer C60 Alq3 channel resistance

Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy

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Chinese Physics B 2008年第4期17卷 1360-1363页

作者：李新化钟飞邱凯尹志军姬长建 Key Laboratory of Material Physics Institute of Solid State PhysicsChinese Academy of Sciences

This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire （0001） substrate with a double A1N buffer layer. The buffer layer consists of a high-temperature （HT） A1N layer and a low-temperature （LT） A1N layer grown at 800℃ and 600℃, respectively. It is demonstrated that the HT-A1N layer can result in the growth of GaN epilayer in Ga-polarity and the LT-A1N layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858cm^2/V.s at room temperature when the thickness of LT-A1N layer varies from 0 to 20nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilavers by the utilization of LT-A1N layer.

关键词： Gallium Nitride buffer layer carrier mobility polarity

Dip Coating of Nano Hydroxyapatite on Titanium Alloy with Plasma Assistedγ-Alumina buffer layer:A Novel Coating Approach

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Journal of Materials Science & Technology 2013年第6期29卷 557-564页

作者： M.Khalid M.Mujahid A.Nusair Khan R.S.Rawat School of Chemical and Materials Engineering National University of Sciences and TechnologySector H-12IslamabadPakistan Institute of Industrial Control Systems RawalpindiPakistan NSSE National Institute of EducationNanyang Technological UniversitySingapore

This paper reported a novel coating approach to deposit a （HA） film on Ti6Al4V alloy with Al2O3 buffer layer for thin, crack free and nano-structured hydroxyapatite biomedical implants. The Al2O3 buffer layer was deposited by plasma spraying while the HA top layer was applied by dip coating technique. The X-ray diffraction （XRD） and Raman reflections of alumina buffer layer showed α- to γ-Al2O3 phase transformation; and the fractographic analysis of the sample revealed the formation of columnar grains in well melted splats. The bonding strength between Al2O3 coating and Ti6Al4V substrate was estimated to be about 40 MPa. The presence of dip coated HA layer was confirmed using XRD, scanning electron microscopy （SEM） and energy dispersive X-ray spectroscopy （EDX） analysis. The SEM images exhibited that HA top layer enveloped homogenously the troughs and crests of the underneath rough （Ra = 2.91 μm） Al2O3 surface. It is believed that the novel coating approach adopted might render the implant suitable for rapid cement-less fixation as well as biocompatible for longer periods.

关键词： Ti6Al4V alloy Biomaterials buffer layer Ceramic coatings

Photocurrent analysis of organic photovoltaic cells based on CuPc/C_(60) with Alq_3 as a buffer layer

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Chinese Physics B 2010年第3期19卷 579-583页

作者：王娜娜于军胜臧月蒋亚东 State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic InformationUniversity of Electronic Science and Technology of China(UESTC)

The performance of an organic photovoltaic （OPV） cell based on copper phthatocyanine CuPc/C60 with a tris- （8-hydroxyquinolinato） aluminum （Alq3） buffer layer has been investigated. It was found that the power conversion efficiency of the device was 1.51% under illumination with an intensity of 100 mW/cm^2, which was limited by a squareroot dependence of the photocurrent on voltage. The photocurrent optical power density characteristics showed that the OPV cell had a significant space-charge limited photocurrent with a varied saturation voltage and a three quarters power dependence on optical power density. Also, the absorption spectrum was measured by a spectrophotometer, and the results showed that the additional Alq3 layer has a minor effect on photocurrent generation.

关键词： organic photovoltaic (OPV) cells buffer layer Alq3 space-charge limited current

Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films

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Chinese Physics B 2010年第10期19卷 550-553页

作者：张旭辉马斌张宗芝金庆原 Key Lab of Advanced Photonic Materials and Devices Laboratory of Advanced Materials and Department of Optical Science and Engineering Fudan University

Thin Mn（2 nm）/Al（2 nm） bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic T-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of nonferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation.

关键词： Ll0 τ--MnAl buffer layer

Deep insights into interface engineering by buffer layer for efficient perovskite solar cells: a firstprinciples study

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Science China Materials 2020年第8期63卷 1588-1596页

作者： Le Huang Huafeng Dong Nengjie Huo Zhaoqiang Zheng Hui-Xiong Deng Gang Zhang Yuan Cheng Jingbo Li School of Materials and Energy Guangdong University of TechnologyGuangzhou 510006China College of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen 518060China Institute of semiconductor science and technology South China Normal UniversityGuangzhou 510631China State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences&College of Materials Science and Opto-Electronic TechnologyUniversity of Chinese Academy of SciencesBeijing 100083China Institute of High Performance Computing A*STARSingapore

Recent years have seen swift increase in the power conversion efficiency of perovskite solar cells(PSCs)Interface engineering is a promising route for further improving the performance of *** we perform firstprinciples calculations to explore the effect of four candidate buffer materials(MACl,MAI,PbCl2and PbI2)on the electronic structures of the interface between MAPbI3absorber and *** find that MAX(X=Cl,I)as buffer layers will introduce a high electron barrier and enhance the electronhole ***,MAX does not passivate the surface states *** conduction band minimum of PbI2is much lower than that of MAPbI3absorber,which significantly limits the band bending of the absorber and open-circuit voltage of solar *** the other side,suitable bandedge energy level positions,small lattice mismatch with TiO2surfaces,and excellent surface passivation make PbCl2a promising buffer material for absorber/electron-transport-layer interface engineering in *** results in this work thus provide deep understanding on the effects of interface engineering with a buffer layer,which shall be useful for improving the performance of PSCs and related optoelectronics.

关键词： perovskite solar cells buffer layer interface engineering band alignment interfacial defect passivation

Growth of CuI buffer layer prepared by spraying method

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Transactions of Nonferrous Metals Society of China 2011年第2期21卷 359-363页

作者：阎有花刘迎春方玲卢志超李正邦周少雄钢铁研究总院安泰科技股份有限公司北京100081

CuI thin films with nano-scale grains of about 35nm were deposited via spraying method with using acetonitrile as solvent. The influence of iodine doping concentration in acetonitrile solution on the structure, topographic and optical properties of CuI thin films was investigated. X-ray diffraction results showed that CuI iodine-doped films doped CuI：I2 were in γ-phase of zinc blende structure with （111） preferential plane. Scanning electron microscopy revealed that the microstructure of CuI films depended on the relative amount of doping iodine in the solution. When the iodine doping amount in acetonitrile solution was 0.025 g, the film was uniform and compact, the optical transmittance was 75.4% in the part of visible region and the energy band gap was close to 2.96 eV.

关键词： CuI thin film buffer layer spraying method iodine doping

YBCO Films Grown on Sapphire with YSZ buffer layer

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Rare Metals 1994年第4期13卷 269-272页

作者：石东奇杨秉川王小平彭正顺常世安北京有色金属研究总院北京

The (h00) oriented YSZ (yttria-stabilized zirconia) buffer layers were grown successfully on (1120) and(1102) sapphire plane substrates by rf. planar target magnetron sputtering method. The effect of different dep-osition conditions on the structure of YSZ films was studied X-ray diffraction rock curve and electron channel-ling pattern (ECP) showed that the YSZ films has highly oriented nature. YBCO (Y BaCuO) films were depos-ited on the YSZ / (1120) Al_2O_3 and (1102) Al_2O_3, substrate by in situ de inverted cyhdrical target magnetronsputtering method. T_c≥88K and J_c=1O × 10￣6A / cm￣2 at 77 K were achieved

关键词： YBaCuO film Yttria-stabilized zirconia buffer layer