Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films

作     者：张旭辉 马斌 张宗芝 金庆原 

作者机构：Key Lab of Advanced Photonic Materials and Devices Laboratory of Advanced Materials and Department of Optical Science and Engineering Fudan University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2010年第19卷第10期

页      面：550-553页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 60490290, 60678008, 10604016, 50771032,and 50771033) the National Basic Research Program of China (Grant No. 2009CB929201) 

主　　题：Ll0 τ--MnAl buffer layer 

摘      要：Thin Mn（2 nm）/Al（2 nm） bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic T-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of nonferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation.