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High-voltage SOI lateral MOSFET with a dual vertical field plate

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Chinese Physics B 2013年第11期22卷 645-650页

作者：范杰张波罗小蓉李肇基 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

A new silicon-on-insulator （SOI） power lateral MOSFET with a dual vertical field plate （VFP） in the oxide trench is proposed. The dual VFP modulates the distribution of the electric field in the drift region, which enhances the internal field of the drift region and increases the drift doping concentration of the drift region, resulting in remarkable improvements in breakdown voltage （BV） and specific on-resistance （Ron,sp）. The mechanism of the VFP is analyzed and the characteristics of BV and Ron,sp are discussed. It is shown that the BV of the proposed device increases from 389 V of the conventional device to 589 V, and the Ron,sp decreases from 366 mΩ·cm2 to 110 mΩ·cm2.

关键词： breakdown voltage specific on-resistance vertical field plate oxide trench

A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer

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Chinese Physics B 2012年第6期21卷 573-578页

作者：张金平李泽宏张波李肇基 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China

A novel high-voltage light punch-through（LPT） carrier stored trench bipolar transistor（CSTBT） with buried p-layer（BP） is proposed in this *** the negative charges in the BP layer modulate the bulk electric field distribution,the electric field peaks both at the junction of the p base/n-type carrier stored（N-CS） layer and the corners of the trench gates are reduced,and new electric field peaks appear at the junction of the BP layer/N drift *** a result,the overall electric field in the N drift region is enhanced and the proposed structure improves the breakdown voltage（BV） significantly compared with the LPT ***,the proposed structure breaks the limitation of the doping concentration of the N-CS layer（NN CS） to the BV,and hence a higher NN CS can be used for the proposed LPT BP-CSTBT structure and a lower on-state voltage drop（Vce（sat）） can be obtained with almost constant *** results show that with a BP layer doping concentration of NBP = 7 × 10^15 cm^-3,a thickness of LBP = 2.5 μm,and a width of WBP = 5 μm,the BV of the proposed LPT BP-CSTBT increases from 1859 V to 1862 V,with NN CS increasing from 5 × 10^15 cm^-3 to 2.5 × 10^16 cm^-***,with the same N-drift region thickness of 150 μm and NN CS,the BV of the CSTBT decreases from 1598 V to 247 ***,the Vce（sat） of the proposed LPT BP-CSTBT structure decreases from 1.78 V to 1.45 V with NN CS increasing from 5 × 10^15 cm^-3 to 2.5 × 10^16 cm^-3.

关键词： carrier stored trench bipolar transistor light punch-through buried p-layer breakdown voltage

A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhomogeneous floating islands

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Chinese Physics B 2011年第12期20卷 450-455,460+459页

作者：任敏李泽宏刘小龙谢加雄邓光敏张波 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

A novel planar vertical double-diffused metal-oxide-semiconductor （VDMOS） structure with an ultra-low specific on-resistance （Ron,sp）, whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region, is proposed. The theoretical limit of its Ron,sp is deduced, the influence of structure parameters on the breakdown voltage （BV） and Ron,sp are investigated, and the optimized results with BV of 83 V and Ron,sp of 54 mΩ.mm2 are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor （MOSFET） has a superior ＂Ron,sp/BV＂ trade-off to the conventional VDMOS （a 38% reduction of Ron,sp with the same BV） and the homogeneous-floating-islands MOSFET （a 10% reduction of Ron,sp with the same BV）. The inhomogeneous-floatingislands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET. Its reverse recovery peak current, reverse recovery time and reverse recovery charge are about 50, 80 and 40% of those of the superjunction MOSFET, respectively.

关键词： inhomogeneous floating islands specific on-state resistance breakdown voltage body diode reverse recovery

Novel high-voltage power lateral MOSFET with adaptive buried electrodes

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Chinese Physics B 2012年第7期21卷 444-449页

作者：章文通吴丽娟乔明罗小蓉张波李肇基 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

A new high-voltage and low-specific on-resistance （Ron,sp） adaptive buried electrode （ABE） silicon-on-insulator （SOI） power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide （BOX） layer, the negative drain voltage Vd is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than tile electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field EI and the breakdown voltage （BV） of ABE SOI are 545 V/μm and -587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low Ron,sp is obtained. Furthermore, the structure also alleviates the self-heating effect （SHE）. The analytical model matches the simulation results.

关键词： adaptive buried electrode interface charge breakdown voltage enhanced dielectric layer field

A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design

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Chinese Physics B 2018年第8期27卷 627-632页

作者：陈伟中黄垚贺利军韩郑生黄义 College of Electronics Engineering Chongqing University of Posts and TelecommunicationsChongqing 400065China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China

A reverse-conducting lateral insulated-gate bipolar transistor （NI.2-LltJlS｜） with a trench oxide layer （IUL）, teaturlng a vertical N-buffer and P-collector is proposed. Firstly, the TOL enhances both of the surface and bulk electric fields of the N-drift region, thus the breakdown voltage （BV） is improved. Secondly, the vertical N-buffer layer increases the voltage drop VpN of the P-collector/N-buffer junction, thus the snapback is suppressed. Thirdly, the P-body and the vertical N-buffer act as the anode and the cathode, respectively, to conduct the reverse current, thus the inner diode is integrated. As shown by the simulation results, the proposed RC-LIGBT exhibits trapezoidal electric field distribution with BV of 342.4 V, which is increased by nearly 340% compared to the conventional RC-LIGBT with triangular electric fields of 100.2 V. Moreover, the snapback is eliminated by the vertical N-buffer layer design, thus the reliability of the device is improved.

关键词： reverse-conducting lateral insulated-gate bipolar transistor (RC-LIGBT) breakdown voltage snapback phenomenon

Ultra-low on-resistance high voltage (>600V) SOI MOSFET with a reduced cell pitch

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Chinese Physics B 2011年第2期20卷 555-560页

作者：罗小蓉姚国亮陈曦王琦葛瑞 Florin Udrea State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Department of Engineering University of Cambridge

A low specific on-resistance （RS,on） silicon-on-insulator （SOI） trench MOSFET （nmtal-oxide-semiconductor-field- effect-transistor） with a reduced cell pitch is proposed. The lateral MOSFET features multiple trenches： two oxide trenches in the drift region and a trench gate extended to the buried oxide （BOX）（SOI MT MOSFET）. Firstly, the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si; secondly, the oxide trenches cause multiple=directional depletion, which improves the electric field distribution and enhances the reduced surface field （RESURF） effect in the SOI layer. Both of them result in a high breakdown voltage （BV）. Thirdly, the oxide trenches cause the drift region to be folded in the vertical direction, leading to a shortened cell pitch and a reduced Rs,on. Fourthly, the trench gate extended to the BOX further reduces RS,on, owing to the electron accumulation layer. The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor （LDMOS） to 632 V at the same half cell pitch of 21.5 μm, and RS,on decreases from 419 mΩ cm2 to 36.6 mΩ. cm2. The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.

关键词： silicon-on-insulator electric field breakdown voltage trench gate trench

Compound buried layer SOI high voltage device with a step buried oxide

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Chinese Physics B 2011年第7期20卷 399-404页

作者：王元刚罗小蓉葛锐吴丽娟陈曦姚国亮雷天飞王琦范杰胡夏融 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

A silicon-on-insulator （SOI） high performance lateral double-diffusion metal oxide semiconductor （LDMOS） on a compound buried layer （CBL） with a step buried oxide （SBO CBL SOI） is proposed. The step buried oxide locates holes in the top interface of the upper buried oxide （UBO） layer. Furthermore, holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide （LBO） layer. Consequently, the electric fields in both the thin LBO and the thick UBO are enhanced by these holes, leading to an improved breakdown voltage. The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer. Moreover, SBO CBL SOI can also reduce the self-heating effect.

关键词： breakdown voltage step buried oxide compound buried layer self-heating effect

A new integrated SOI power device based on self-isolation technology

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Journal of Semiconductors 2010年第8期31卷 98-103页

作者：高唤梅罗小蓉张伟邓浩雷天飞 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

A new SOI LDMOS structure with buried n-islands（BNIs） on the top interface of the buried oxide（BOX） is presented in a p-SOI high voltage integrated circuits（p-SOI HVICs）,which exhibits good self-isolation performance between the power device and low-voltage control ***,both the donor ions of BNIs and holes collected between depleted n-islands not only enhance the electric field in BOX from 32 to 113 V/μm,but also modulate the lateral electric field distribution,resulting in an improvement of the breakdown voltage of the BNI SOI LDMOS.A 673 V BNI SOI LDMOS is experimentally obtained and presents an excellent self-isolation performance in a p-SOI HVIC.

关键词： buried n-islands self-isolation breakdown voltage electric field SOI

A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer

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Chinese Physics B 2010年第7期19卷 530-536页

作者：罗小蓉王元刚邓浩 Florin Udreab State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Department of Engineering University of Cambridge

A novel partial silicon-on-insulator （PSOI） high voltage device with a low-k （relative permittivity） dielectric buried layer （LK PSOI） and its breakdown mechanism are presented and investigated by MEDICI. At a low k value the electric field strength in the dielectric buried layer （EI） is enhanced and a Si window makes the substrate share the vertical drop, resulting in a high vertical breakdown voltage; in the lateral direction, a high electric field peak is introduced at the Si window, which modulates the electric field distribution in the SOI layer; consequently, a high breakdown voltage （BV） is obtained. The values of EI and BV of LK PSOI with ki = 2 on a 2μm thick SOI layer over 1μm thick buried layer are enhanced by 74% and 19%, respectively, compared with those of the conventional PSOI. Furthermore, the Si window also alleviates the self-heating effect.

关键词： silicon-on-insulator low k dielectric electric field breakdown voltage