Compound buried layer SOI high voltage device with a step buried oxide

作     者：王元刚 罗小蓉 葛锐 吴丽娟 陈曦 姚国亮 雷天飞 王琦 范杰 胡夏融 

作者机构：State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2011年第20卷第7期

页      面：399-404页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos.60806025 and 60976060) in part by the State Key Laboratory of Electronic Thin Films and Integrated Devices,China (Grant No.CXJJ201004) 

主　　题：breakdown voltage step buried oxide compound buried layer self-heating effect 

摘      要：A silicon-on-insulator （SOI） high performance lateral double-diffusion metal oxide semiconductor （LDMOS） on a compound buried layer （CBL） with a step buried oxide （SBO CBL SOI） is proposed. The step buried oxide locates holes in the top interface of the upper buried oxide （UBO） layer. Furthermore, holes with high density are collected in the interface between the polysilicon layer and the lower buried oxide （LBO） layer. Consequently, the electric fields in both the thin LBO and the thick UBO are enhanced by these holes, leading to an improved breakdown voltage. The breakdown voltage of the SBO CBL SOI LDMOS increases to 847 V from the 477 V of a conventional SOI with the same thicknesses of SOI layer and the buried oxide layer. Moreover, SBO CBL SOI can also reduce the self-heating effect.