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Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

Journal of Semiconductors 2024年第3期45卷 45-52页

作者： NicolòZagni Manuel Fregolent Andrea Del Fiol Davide Favero Francesco Bergamin Giovanni Verzellesi Carlo De Santi Gaudenzio Meneghesso Enrico Zanoni Christian Huber Matteo Meneghini Paolo Pavan Department of Engineering“Enzo Ferrari” University of Modena and Reggio EmiliaModena 41125Italy Department of Information Engineering University of PadovaPadova 35131Italy Department of Sciences and Methods for Engineering(DISMI) University of Modena and Reggio EmiliaReggio Emilia 42122Italy EN&TECH Center University of Modena and Reggio EmiliaReggio Emilia 42122Italy Advanced Technologies and Micro Systems Department Robert Bosch GmbHRenningen 71272Germany

Vertical GaN power MOSFET is a novel technology that offers great potential for power switching *** still in an early development phase,vertical GaN devices are yet to be fully optimized and require careful studies to foster their *** this work,we report on the physical insights into device performance improvements obtained during the development of vertical GaN-on-Si trench MOSFETs(TMOS’s)provided by TCAD simulations,enhancing the dependability of the adopted process optimization ***,two different TMOS devices are compared in terms of transfer-curve hysteresis(H)and subthreshold slope(SS),showing a≈75%H reduction along with a≈30%SS *** allow attributing the achieved improvements to a decrease in the border and interface traps,respectively.A sensitivity analysis is also carried out,allowing to quantify the additional trap density reduction required to minimize both figures of merit.

关键词： vertical GaN trench MOSFET SiO_(2) interface traps border traps hysteresis BTI

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Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments

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Chinese Physics B 2020年第10期29卷 459-463页

作者： Si-Qi Jing Xiao-Hua Ma Jie-Jie Zhu Xin-Chuang Zhang Si-Yu Liu Qing Zhu Yue Hao School of Advanced Materials and Nanotechnology Xidian UniversityXi'an 710071China Key Laboratory of Wide Bandgap Semiconductor Technology Xidian UniversityXi'an 710071China

Trapping effect in normally-off Al2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) high-electron-mobility transistors (MOS-HEMTs) with post-etch surface treatment was studied in this paper. Diffusion-controlled interface oxidation treatment and wet etch process were adopted to improve the interface quality of MOS-HEMTs. With capacitance–voltage (C–V) measurement, the density of interface and border traps were calculated to be 1.13 × 10^12 cm^−2 and 6.35 × 10^12 cm^−2, effectively reduced by 27% and 14% compared to controlled devices, respectively. Furthermore, the state density distribution of border traps with large activation energy was analyzed using photo-assisted C–V measurement. It is found that irradiation of monochromatic light results in negative shift of C–V curves, which indicates the electron emission process from border traps. The experimental results reveals that the major border traps have an activation energy about 3.29 eV and the change of post-etch surface treatment process has little effect on this major activation energy.

关键词： AlGaN/GaN MOS-HEMTs interface traps border traps photo-assisted C-V measurement

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