Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD

作     者：NicolòZagni Manuel Fregolent Andrea Del Fiol Davide Favero Francesco Bergamin Giovanni Verzellesi Carlo De Santi Gaudenzio Meneghesso Enrico Zanoni Christian Huber Matteo Meneghini Paolo Pavan Nicolò Zagni;Manuel Fregolent;Andrea Del Fiol;Davide Favero;Francesco Bergamin;Giovanni Verzellesi;Carlo De Santi;Gaudenzio Meneghesso;Enrico Zanoni;Christian Huber;Matteo Meneghini;Paolo Pavan

作者机构：Department of Engineering“Enzo Ferrari”University of Modena and Reggio EmiliaModena 41125Italy Department of Information EngineeringUniversity of PadovaPadova 35131Italy Department of Sciences and Methods for Engineering(DISMI)University of Modena and Reggio EmiliaReggio Emilia 42122Italy EN&TECH CenterUniversity of Modena and Reggio EmiliaReggio Emilia 42122Italy Advanced Technologies and Micro Systems DepartmentRobert Bosch GmbHRenningen 71272Germany 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2024年第45卷第3期

页      面：45-52页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：funding from the Electronic Component Systems for European Leadership Joint Undertaking (ECSEL JU),under grant agreement No.101007229 support from the European Union’s Horizon 2020 Research and Innovation Programme,Germany,France,Belgium,Austria,Sweden,Spain,and Italy 

主　　题：vertical GaN trench MOSFET SiO_(2) interface traps border traps hysteresis BTI 

摘      要：Vertical GaN power MOSFET is a novel technology that offers great potential for power switching *** still in an early development phase,vertical GaN devices are yet to be fully optimized and require careful studies to foster their *** this work,we report on the physical insights into device performance improvements obtained during the development of vertical GaN-on-Si trench MOSFETs(TMOS’s)provided by TCAD simulations,enhancing the dependability of the adopted process optimization ***,two different TMOS devices are compared in terms of transfer-curve hysteresis(H)and subthreshold slope(SS),showing a≈75%H reduction along with a≈30%SS *** allow attributing the achieved improvements to a decrease in the border and interface traps,respectively.A sensitivity analysis is also carried out,allowing to quantify the additional trap density reduction required to minimize both figures of merit.