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Machine learning-based analyses for total ionizing dose effects in bipolar junction transistors

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Nuclear Science and Techniques 2022年第10期33卷 106-116页

作者： Bai-Chuan Wang Meng-Tong Qiu Wei Chen Chen-Hui Wang Chuan-Xiang Tang Department of Engineering Physics Tsinghua UniversityBeijing 100084China Key Laboratory of Particle&Radiation Imaging(Tsinghua University) Ministry of EducationBeijing 100084China State Key Laboratory of Intense Pulsed Radiation Simulation and Effect Xi’an 710024China State Key Laboratory of Nuclear Physics and Technology Peking UniversityBeijing 100871China

Machine learning methods have proven to be powerful in various research *** this paper,we show that research on radiation effects could benefit from such methods and present a machine learning-based scientific discovery *** total ionizing dose(TID)effects usually cause gain degradation of bipolar junction transistors(BJTs),leading to functional failures of bipolar integrated ***,many experiments of TID effects on BJTs have been conducted at different laboratories worldwide,producing a large amount of experimental data which provides a wealth of ***,it is difficult to utilize these data *** this study,we proposed a new artificial neural network(ANN)approach to analyze the experimental data of TID effects on BJTs An ANN model was built and trained using data collected from different *** results indicate that the proposed ANN model has advantages in capturing nonlinear correlations and predicting the *** trained ANN model suggests that the TID hardness of a BJT tends to increase with base current I.A possible cause for this finding was analyzed and confirmed through irradiation experiments.

关键词： Total ionizing dose effects bipolar junction transistor Artificial neural network Machine learning Radiation effects

Ultra-high current gain tunneling hot-electron transfer amplifier based on vertical van der Waals heterojunctions

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Nano Research 2020年第8期13卷 2085-2090页

作者： Xu Zhao Peng Chen Xingqiang Liu Guoli Li Xuming Zou Yuan Liu Qilong Wu Yufang Liu Woo Jong Yu Lei Liao Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices School of Physics and ElectronicsChangsha410082China Henan Normal University School of PhysicsXinxiang453007China Department of Electronic and Electrical Engineering Sungkyunkwan UniversitySuwon440-746Republic of Korea

Due to the backscattered parasitic current from the barriers,the current gain of the widely used amplifier is far from *** this work,we demonstrate a vertical Au/Al2O3/BP/MoS2 tunneling hot-electron transfer amplifier with a hot-electron emitter-base junction and a p-n junction as the base-collector *** monoenergetic electrons traverse through the ultrathin Al2O3 dielectric via tunneling,which are accelerated and shifted to the collector *** devices exhibit a high current on-off ratio of>105 and a high current density(JC)of∼1,000 A/cm2 at the same ***,this work demonstrates a common-emitter current gain(β)value of 1,384 with a nanowatt power consumption at room temperature,which is a record high value among the all 2D based hot-electron ***,the temperature dependent performance is investigated,and theβvalue of 1,613 is obtained at 150 ***,this work presents the potential of 2D based transistors for high-performance applications.

关键词： bipolar junction transistor hot electron van der Waals heterostructure current gain

The Complete Semiconductor transistor and Its Incomplete Forms

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Journal of Semiconductors 2009年第6期30卷 1-10页

作者：揭斌斌薩支唐 Peking University University of Florida Gainesville Chinese Academy of Sciences Foreign Member

This paper describes the definition of the complete *** semiconductor devices,the complete transistor is always bipolar,namely,its electrical characteristics contain both electron and hole currents controlled by their spatial charge *** complete or incomplete transistors,via coined names or/and designed physical geometries,included the 1949 Shockley p/n junction transistor（later called bipolar junction transistor,BJT）,the 1952 Shockley unipolar ＇field-effect＇ transistor（FET,later called the p/n junction Gate FET or JGFET）,as well as the field-effect transistors introduced by later *** between the surface-channel MOS-gate FET（MOSFET） and the volume-channel BJT are *** bipolar currents,identified by us in a recent nanometer FET with 2-MOS-gates on thin and nearly pure silicon base,led us to the recognition of the physical makeup and electrical current and charge compositions of a complete transistor and its extension to other three or more terminal signal processing devices,and also the importance of the terminal contacts.

关键词： bipolar field-effecttransistor bipolar junction transistor complete transistor incomplete transistors electromechanical transistors biochemical transistors

ELDRS and dose-rate dependence of vertical NPN transistor

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Chinese Physics C 2009年第1期33卷 47-49页

作者：郑玉展陆妩任迪远王改丽余学锋郭旗 Xinjiang Technical Institute of Physics & Chemistry Chinese Academy of Sciences Graduate University of Chinese Academy of Sciences

The enhanced low-dose-rate sensitivity （ELDRS） and dose-rate dependence of vertical NPN transistors are investigated in this article. The results show that the vertical NPN transistors exhibit more degradation at low dose rate, and that this degradation is attributed to the increase on base current. The oxide trapped positive charge near the SiO2-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results.

关键词： bipolar junction transistor ELDRS effect dose-rate dependence

The bipolar Field-Effect transistor:Ⅰ.Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)

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Journal of Semiconductors 2007年第11期28卷 1661-1673页

作者：薩支唐揭斌斌中国科学院北京大学北京100871

This paper describes the bipolar field-effect transistor （BiFET） and its theory. Analytical solution is ob- tained from partitioning the two-dimensional transistor into two one-dimensional transistors. The analysis employs the parametric surface-electric-potential and the electrochemical （quasi-Fermi） potential-gradient driving force to compute the current. Output and transfer D. C. current and conductance versus voltage are presented over practi- cal ranges of terminal D. C. voltages and device parameters. Electron and hole surface channel currents are pres- ent simultaneously, a new feature which could provide circuit functions in one physical transistor such as the CMOS inverter and SRAM memory.

关键词： bipolar field-effect transistor theory MOS field-effect transistor bipolar junction transistor simul-taneous hole and electron surface channel~ volume channel surface potential