Ultra-high current gain tunneling hot-electron transfer amplifier based on vertical van der Waals heterojunctions

作     者：Xu Zhao Peng Chen Xingqiang Liu Guoli Li Xuming Zou Yuan Liu Qilong Wu Yufang Liu Woo Jong Yu Lei Liao Xu Zhao;Peng Chen;Xingqiang Liu;Guoli Li;Xuming Zou;Yuan Liu;Qilong Wu;Yufang Liu;Woo Jong Yu;Lei Liao

作者机构：Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and DevicesSchool of Physics and ElectronicsChangsha410082China Henan Normal UniversitySchool of PhysicsXinxiang453007China Department of Electronic and Electrical EngineeringSungkyunkwan UniversitySuwon440-746Republic of Korea 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2020年第13卷第8期

页      面：2085-2090页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：This work was supported by the National Key Research and Development Program of Ministry of Science and Technology(Nos.2018YFA0703704 and 2018YFB0406603) the National Natural Science Foundation of China(Nos.61851403,51872084,61704052,61811540408,51872084,and 61704051) as well as the Natural Science Foundation of Hunan Province(Nos.2017RS3021 and 2017JJ3033) 

主　　题：bipolar junction transistor hot electron van der Waals heterostructure current gain 

摘      要：Due to the backscattered parasitic current from the barriers,the current gain of the widely used amplifier is far from *** this work,we demonstrate a vertical Au/Al2O3/BP/MoS2 tunneling hot-electron transfer amplifier with a hot-electron emitter-base junction and a p-n junction as the base-collector *** monoenergetic electrons traverse through the ultrathin Al2O3 dielectric via tunneling,which are accelerated and shifted to the collector *** devices exhibit a high current on-off ratio of105 and a high current density(JC)of∼1,000 A/cm2 at the same ***,this work demonstrates a common-emitter current gain(β)value of 1,384 with a nanowatt power consumption at room temperature,which is a record high value among the all 2D based hot-electron ***,the temperature dependent performance is investigated,and theβvalue of 1,613 is obtained at 150 ***,this work presents the potential of 2D based transistors for high-performance applications.