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检索条件"主题词=antimonide"
8 条 记 录,以下是1-10 订阅
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Large-diameter indium antimonide microwire based broadband and robust optical switch
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Science China(Physics,Mechanics & Astronomy) 2023年 第2期66卷 68-78页
作者: Fei Lou Xiangpeng Cui Xinyue Sheng Chunyan Jia Shuaiyi Zhang Xia Wang Vladislav Khayrudinov Baitao Zhang Shande Liu Wing Yim Tam Harri Lipsanen He Yang Jingliang He Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory of Qingdao School of Mathematics and PhysicsQingdaoUniversityof Scienceand TechnologyQingdao266061China School of Instrumenation and Optoeletronic Engineering Beihang University Beijing 100191China Department of Electronics and Nanoengineering Aalto Universiy EspooFl-0o076Finland State Key Laboratory of Crystal Materials Institute of Novel Semiconductors Shandong University.Jinan 250100China College of Electronic and Information Engineering Shandong University of Science and TechnologyQingdao 266590China Depariment of Physics and Wiliam Mong Institute of Nano Science and Technology Hong Kong University of Science and Technology.HongKongChina
Various nanophotonic devices based on semiconductor wires with a diameter of several ten nanometers have been ***,studying the optoelectronics properties and performance of such devices based on large-diameter wires i... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Progress in antimonide Based III-V Compound Semiconductors and Devices
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Engineering(科研) 2010年 第8期2卷 617-624页
作者: Chao Liu Yanbo Li Yiping Zeng 不详
In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Thermal Conductivities of III-V antimonides
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Semiconductor Photonics and Technology 2004年 第3期10卷 208-212页
作者: ZHUCheng ZHANGYong-gang LIAi-zhen StateKeyLab.ofFunction.Mater.forInform. ShanghaiInstituteofMicrosyst.andInform.Technol.CASsShanghai200050CHN
Thermal parameters of various III-V antimonides,especially the quaternary lattice matched to GaSb or InAs substrates as well as some strained ternaries,have been investigated *** show that at most composition region m... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
AlGaSb/GaSb quantum wells grown on an optimized AlSb nucleation layer
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Journal of Semiconductors 2010年 第5期31卷 30-34页
作者: 高汉超 温才 王文新 蒋中伟 田海涛 何涛 李辉 陈弘 Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of Sciences
Five-period AlGaSb/GaSb multiple quantum wells(MQW) are grown on a GaSb *** optimizing the AlSb nucleation layer,the low threading dislocation density of the MQW is found to be(2.50±0.91)×10~8 cm^(-2) in 1-μm... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Effect of Transition Metal on the Electrochemical Performances of Some Intermetallic Anodes for Lithium Ion Batteries
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Journal of Materials Science & Technology 2004年 第3期20卷 344-346页
作者: Jian XIE Xinbing ZHAO Gaoshao CAO Mingjian ZHAO Yaodong ZHONG Department of Materials Science and Engineering, Zhejiang University Hangzhou 310027,China Dept. of Mat. Sci. and Eng. Zhejiang Univ. Hangzhou 310027 China
Some transition metal antimonides were prepared by levitation melting and subsequent ball-milling. The electrochem-ical behaviors of these materials as new candidate negative electrode materials in lithium ion seconda... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
An Innovative Gas Sensor with On-Chip Reference Using Monolithic Twin Laser
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Chinese Physics Letters 2007年 第10期24卷 2839-2841页
作者: 张永刚 田招兵 张晓钧 顾溢 李爱珍 祝向荣 郑燕兰 刘盛 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050
An innovative gas sensor with on-chip reference using a monolithic twin laser is proposed. In this sensor a monolithic twin laser generates two closer laser beams with slight different wavelengths alternatively, one p... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Synthesis,Structure and Bonding Feature of New Metallic Zintl Phases RE_3Cu_3Sb_4(RE= Nd ,Sm ,Tb , Dy , Ho)
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Journal of Rare Earths 1999年 第3期17卷 228-230页
作者: 赵景泰 宋明虎 周善康 黄种乐 宓锦校 毛少瑜 Department of Materials Science Xiamen University Xiamen 361005 China Department of Chemistry Xiamen University Xiamen 361005 China
RE 3Cu 3Sb 4(RE=Nd, Sm, Tb, Dy, Ho) was synthesized by arc melting method and their crystal structures were characterized by powder X ray method. The compounds crystallize in cubic system, Y 3Au 3Sb 4 type, sp... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
High-performance GaSb planar PN junction detector
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Journal of Semiconductors 2024年 第9期45卷 48-52页
作者: Yuanzhi Cui Hongyue Hao Shihao Zhang Shuo Wang Jing Zhang Yifan Shan Ruoyu Xie Xiaoyu Wang Chuang Wang Mengchen Liu Dongwei Jiang Yingqiang Xu Guowei Wang Donghai Wu Zhichuan Niu Derang Cao College of Physics National Demonstration Center for Experimental Applied Physics EducationQingdao UniversityQingdao 266071China Key Laboratory of Optoelectronic Materials and Devices Chinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049China
This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论