High-performance GaSb planar PN junction detector

作     者：Yuanzhi Cui Hongyue Hao Shihao Zhang Shuo Wang Jing Zhang Yifan Shan Ruoyu Xie Xiaoyu Wang Chuang Wang Mengchen Liu Dongwei Jiang Yingqiang Xu Guowei Wang Donghai Wu Zhichuan Niu Derang Cao Yuanzhi Cui;Hongyue Hao;Shihao Zhang;Shuo Wang;Jing Zhang;Yifan Shan;Ruoyu Xie;Xiaoyu Wang;Chuang Wang;Mengchen Liu;Dongwei Jiang;Yingqiang Xu;Guowei Wang;Donghai Wu;Zhichuan Niu;Derang Cao

作者机构：College of PhysicsNational Demonstration Center for Experimental Applied Physics EducationQingdao UniversityQingdao 266071China Key Laboratory of Optoelectronic Materials and DevicesChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic TechnologyUniversity of Chinese Academy of SciencesBeijing 100049China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2024年第45卷第9期

页      面：48-52页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

主　　题：antimonide short-wave infrared planar junction zinc diffusion 

摘      要：This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μm, a maximum detectivity of 8.73 × 10^(10) cm·Hz^(1/2)/W, and a minimum dark current density of 1.02 × 10^(-5) A/cm^(2).Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.