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Effect of annealing Temperature on Two-Step Method of GaN Films

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Effect of Annealing Temperature on Two-Step Method of GaN Fi...

Deterioration behavior of c-Si solar cell decorated with silver nanoparticles

2012 International Conference on Material Sciences and Manufacturing Technology(ICMSMT 2012)

作者： Liu Mei Xu Xue-you Man Bao-yuan Kong De-min College of Physics and Electronics Shandong Normal University Information Research Institute Shandong Academy of Sciences

GaN thin films have been deposited on Si(111) substrates by pulsed laser deposition(PLD) of a G N target in nitrogen atmosphere. An Nd: YAG pulsed laser with a wavelength of 1064 nm was used as a laser source. The results indicate that the G N thin films deposited only by PLD are amorphous. By annealing in an NH atmosphere, the quality of the G N thin films is improved, and the crystallzinity G N thin films were obtained. The influence of annealing temperature on the crystallinity, structure, surface morphology and optical properties of G N films have been examined by X-ray diffraction(XRD), atomic force microscopy(AFM) and infrared spectrum. In our experimental conditions, the G N thin films deposited by PLD with a laser energy of 250 m J, growth temperature of 800 ℃ and annealed at 1000 ℃ have the best surface morphology and crystalline quality.

关键词： PLD anneal Ga N thin films annealing temperature effects

来源： cnki会议评论

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Rare Metals 2019年第2期38卷 136-141页

作者： Xuan-Min Zhu Hai-Mei Chang Hai-Zheng Tao Xiu-Jian Zhao State Key Laboratory of Silicate Materials for Architectures Wuhan University of Technology

Silver nanoparticles(AgNPs) with well-distributed sizes were prepared by magnetron sputtering on slides and crystalline silicon(c-Si) solar cell following by annealing at different temperatures. The morphologies,optical and photovoltaic performance were investigated in detail. The spectroscopic result shows that two resonance peaks resulting from coupling effect among neighboring particles are difficult to obtain by other chemical *** photovoltaic performances reveal that the solar cells decorated with AgNPs significantly are degraded, including a maximal decrease of 20.4 % in short-circuit density and 53.9 % in energy conversion efficiency. The lowest efficiency achieved is 5.85 % for c-Si solar cells with AgNPs annealed at 500 ℃. The deterioration should result from the synergetic effect of the intrinsic absorption of single particle and coupling absorption between neighboring particles.

关键词： Magnetron sputtering Silver nanoparticles anneal Plasmon resonance Crystalline silicon solar cell

Microstructure comparison of ZK60 alloy under casting,twin roll casting and hot compression

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Transactions of Nonferrous Metals Society of China 2010年第5期20卷 763-768页

作者：王守仁王敏 KANG Suk-bong CHO Jae-hyung School of Mechanical Engineering University of Ji'nan School of Materials Science and Engineering Shandong University Korea Institute of Materials Science 66 Sangnam-dongChangwon 641010Korea

The microstructures of ZK60 alloy under conventional direct as-casting (DC),twin roll casting (TRC) and twin roll casting followed by hot compression (TRC-HC) were analyzed by optical morphology (OM),electron backscatter diffraction (EBSD) and X-ray diffraction (XRD).The deformation condition of hot compression is 350 ℃,0.1 s?*** microstructural evolution under TRC-HC deformation followed by annealing at different temperatures and time was *** results show that TRC provides more modified microstructure compared with *** are found in TRC processing;dynamic recrystallization (DRX),shear bands and twins are found in TRC-HC.A short annealing time has little effect on hardness,while during a long time annealing,it is found that low annealing temperatures increase the micro-hardness and high temperature decreases it.

关键词： microstructural evolution anneal dynamic recrystallization static recrystallization twin-roll casting hot compression magnesium alloy ZK60

CRYSTALLIZATION AND MELTING OF NYLON 610

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Chinese Journal of Polymer Science 1998年第3期16卷 241-252页

作者：王国明颜德岳卜海山 Department of Applied Chemistry Shanghai Jiaotong University Shanghai 200030 China Department of Materials Science Fudan University Shanghai 200433 China

Differential scanning calorimetry was used to study the crystallization and melting of nylon 610. For nylon 610 crystallized from the melt state (260 degrees C), the overall rate of bulk crystallization can be described by a simple Avrami equation with Avrami exponent n approximate to 2, independent of crystallization temperature. With the experimentally obtained T-m(0) (235 degrees C similar to 255 degrees C) of nylon 610, the fold surface free energy a, was determined to be 35 similar to 38 erg/cm(2). The effects of annealing temperature and time on the melting of quenched nylon 610 were also investigated. For nylon 610 quenched at room temperature there is only one DSC endotherm peak DSC scans on annealed samples exhibited an endotherm peak at approximately 10 degrees C above the annealing temperature. The size and position of the endothermic peak is strongly related to annealing temperature and time. An additional third melting was observed when quenched nylon 610 was annealed at high temperature for a sufficiently long residence time. The existence of the third melting peak suggests that more than one kind of distribution of lamella thickness may occur when quenched nylon 610 is annealed. The implications of these results in terms of crystal thickening mechanism were discussed.

关键词： nylon 610 differential scanning calorimetry crystallization kinetics anneal melt

Introduction of atomic H into Si_3N_4/SiO_2/Si stacks

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Rare Metals 2006年第z1期25卷 150-152页

作者： WEBER K.J. BLAKERS A.W. Centre for Sustainable Energy Systems Faculty of Engineering and Information Technology The Australian National University Canberra ACT 0200 Australia

Atomic H generated by a plasma NH3 source at 400 ℃ was demonstrated to passivate dehydrogenated Si3N4/SiO2/Si stacks effectively by bonding with defects in the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N2 were carried out in order to determine the optimized annealing conditions.

关键词： LPCVD SiO2 passivation anneal

Effect of Chromium-enhanced Diffusivity on Reverted Transformation in Metastable Austenitic Stainless Steels:Theoretical Calculation and Experiment

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Journal of Wuhan University of Technology(Materials Science) 2023年第2期38卷 451-454页

作者： WANG Tao YU Fu Changqing Oilfield Company Oil Prouduction Plant No.8 CNPCChongqing710018China Shanghai Keyan Energy Technology Limited Company Shanghai202150China

Effects of nucleation sites and diffusivity enhancement of chromium on reverted transformation of AISI 304 stainless steel during annealing process were *** calculation revealed that the reverted transformation of strain-inducedα’-martensite→γaustenite could were closely associated with active nucleation sites and diffusivity enhancement of chromium in nanocrystallineα’-*** experimental data and the results were in accordance with 2-grain austenite/α’-martensite junctions calculated theoretically,which could result from high chromium diffusion rate in nanocrystallineα’-*** addition,low temperature is not conducive to reversed transformation,while high temperature and long annealing time will lead to inhomogeneous grain size distribution.

关键词： austenitic stainless steel anneal diffusion phase transformation strain-inducedα′-martensite

Thermal stability of nanocrystalline W-Ti diffusion barrier thin films

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Science China(Technological Sciences) 2010年第4期53卷 1049-1055页

作者： WANG QingXiang,FAN ZhiKang & LIANG ShuHua School of Materials Science and Engineering,Xi’an University of Technology,Xi’an 710048,China 1. School of Materials Science and Engineering Xi’an University of Technology Xi’an 710048 China

Nanocrystalline W-Ti diffusion barrier thin films with different phase structures and Cu/barrier/Si multilayer structures were deposited on p-type Si(100) substrates by DC magnetron *** films were annealed at different temperatures for 1 *** diffusion barrier properties and thermal stability were studied using four-probe tester(FPP),XRD,AFM,XPS,FESEM,and *** experimental results showed that the films were stable up to 700℃.When the annealing temperature was increased,the Cu and Ti atoms began to react and CuTi3 was *** addition,the high resistance Cu3Si was formed due to inter-diffusion between the Si and Cu atoms which made the surface rougher and caused the sheet resistance to increase *** the same time,failure mechanism of the nanocrystalline W-Ti diffusion barrier thin films during annealing process was also discussed.

关键词： nanocrystalline W-Ti thin films diffusion barrier anneal sheet resistance

Alloys Preparation of Ag Particles/Islands on Si Wafer by RF Magnetron Sputtering

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稀有金属材料与工程 2012年第S1期41卷 403-406页

作者： Jae-Wung Lee School of Materials Science and Engineering Georgia Institute of TechnologyAtlantaGA 30332-0245USA

In order to investigate the morphology change of Ag nano-particles/island film with the sputtering time and annealing temperature,Ag nano-particles/island films were sputtered on the silicon wafers by radio-frequency(RF)magnetron *** nano-particles/islands films were sputtered on Si wafer with different *** sputtering,the samples with Ag nano-particles/islands films were annealed at 100,200 and 400 o C for 1 h,*** spectrum was employed to examine the phase stability of Ag particles/island film after annealed at 400 o C for *** result showed that the Raman spectrum peak of Ag particles/island film with annealed at 400 o C was similar to that of pure *** electron microscope(SEM)was used to test the microstructures and morphology of the films with different *** further study the morphology change,atomic force microscope(AFM)was used to test surface morphology of the Ag particles/islands *** SEM and AFM results showed that the morphology of Ag nano-particles/island films were different with the increasing sputtering *** particles went through a dramatic change on the Si wafer surface,when sputtering time changed from 3 to 60 s,Ag particles diffused and agglomerated with the annealing temperature increasing.

关键词： Ag nano-particles/island film sputter anneal diffuse grow

Square ZnO nano-column and its thermal evolution

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Science China(Technological Sciences) 2010年第2期53卷 309-312页

作者： HUANG BinWang, ZHAN HuaHan, WU YaPing, CHEN XiaoHang & KANG JunYong Key Laboratory of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen 361005, China 1. Key Laboratory of Semiconductor Materials and Applications Department of Physics Xiamen University Xiamen 361005 China

Square ZnO nano-columns have been manufactured by molecular beam epitaxy on p-type Si (100) substrate. The morphology and the evolution sequences after thermal annealing were investigated by in-situ scanning tunneling microscopy. We associated the morphology and microstructure evolution with the cubic Si (100) substrate, large lattice mismatching, the coexistence of wurtzite and zincblende phases of ZnO, and the thermal effect.

关键词： ZnO square nano-column anneal wurtzite phase zincblende phase Si (100)