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Abnormal n-type doping effect in nitrogen-doped tungsten diselenide prepared by moderate ammonia plasma treatment

Nano Research 2018年第9期11卷 4923-4930页

作者： Zhepeng Jin Zhi Cai Xiaosong Chen Dacheng Wei State Key Laboratory of Molecular Engineering of Polymers Department of Macromolecular Science Fudan University Shanghai200433 China

To facilitate potential applications of tungsten diselenide （WSe2） in electronics, controllable doping is of great importance. As an industrially compatible technology, plasma treatment has been used to dope two-dimensional （2D） materials. However, owing to the strong etching effect in transition metal dichalcogenides （TMDCs）, it is difficult to controllably dope 2D WSe2 crystals by plasma. Herein, we develop a moderate ammonia plasma treatment method to prepare nitrogen-doped WSe2 with controlled nitrogen content. Interestingly, Raman, photoluminescence, X-ray photoelectron spectroscopy, and electrical Lts reveal abnormal n-doping behavior of nitrogen-doped WSe2, which is attributed to selenium anion vacancy introduced by hydrogen species in ammonia plasma. Nitrogen-doped WSe2 with abnormal n-doping behavior has potential applications in future TMDCs-based electronics.

关键词： nitrogen-doped tungsten diselenide n-type doping ammonia plasma anion vacancy

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Integrating molybdenum sulfide selenide-based cathode with C-O-Mo heterointerface design and atomic engineering for superior aqueous Zn-ion batteries

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Nano Research 2023年第4期16卷 4933-4940页

作者： Hong Li Biao Chen Runhua Gao Fugui Xu Xinzhu Wen Xiongwei Zhong Chuang Li Zhihong Piao Nantao Hu Xiao Xiao Feng Shao Guangmin Zhou Jinlong Yang Guangdong Research Center for Interfacial Engineering of Functional Materials College of Materials Science and EngineeringShenzhen UniversityShenzhen 518060China College of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen 518060China Tsinghua-Berkeley Shenzhen Institute&Tsinghua Shenzhen International Graduate School Tsinghua UniversityShenzhen 518055China Key Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education School of ElectronicsInformation and Electrical EngineeringShanghai Jiao Tong UniversityShanghai 200240China School of Materials Science and Engineering and Tianjin Key Laboratory of Composite and Functional Materials Tianjin UniversityTianjin 300350China School of Chemistry and Chemical Engineering Shanghai Key Laboratory of Electrical Insulation and Thermal AgeingShanghai Jiao Tong UniversityShanghai 200240China School of Engineering and Technology College Yang-en UniversityQuanzhou 362014China

Transition metal dichalcogenides(TMDs)have been regarded as promising cathodes for aqueous zinc-ion batteries(AZIBs)but suffer from sluggish reaction kinetics due to their poor conductivity and the strong electrostatic interaction between Zn-ion and cathode ***,a well-defined structure with MoSSe nanosheets vertically anchored on graphene is used as the cathode for *** dissolution of Se into MoS2 lattice together with heterointerface design via developing C-O-Mo bonds improves the inherent conductivity,enlarges interlayer spacing,and generates abundant anionic *** a result,the Zn2+intercalation/deintercalation process is greatly improved,which is confirmed by theoretical modeling and ex-situ experimental ***,the assembled AZIBs exhibit high-rate capability(124.2 mAh·g^(−1)at 5 A·g^(−1))and long cycling life(83%capacity retention after 1,200 cycles at 2 A·g^(−1)).Moreover,the assembled quasi-solid-state Zn-ion batteries demonstrate a stable cycling performance over 100 cycles and high capacity retention over 94%after 2,500 bending *** study provides a new strategy to unlock the electrochemical activity of TMDs via interface design and atomic engineering,which can also be applied to other TMDs for multivalent batteries.

关键词： Zn2+kinetics heterointerface design atomic engineering anion vacancy

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Achieving photocatalytic water oxidation on LaNbON2 under visible light irradiation

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Journal of Energy Chemistry 2018年第2期27卷 367-371页

作者： Lipeng Wan Feng-Qiang Xiong Bingxue Zhang Ruxin Che Yue Li Minghui Yang Dalian National Laboratory for Clean Energy Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian 116023 Liaoning China College of Materials Science and Engineering College of Environmental and Chemical Engineering Dalian Jiaotong University Dalian 116028 Liaoning China Ningbo Institute of Material Technology and Engineering Chinese Academy of Sciences Ningbo 315201 Zhejiang China

LaNbON2 has narrow bandgap and wide visible-light absorption band, yet no photocatalytic water oxidation on LaNbON2 has been reported. By a post-annealing treatment in Ar, anion vacancies were brought into LaNbON2 as shown by EPR spectroscopy. These could act as donors in the semiconductor. And consequently the oxidative power of holes was enhanced as indicated by the difference between fermi level and valence band maximum（EF-EVBM） evaluated from valence band XPS. The annealed LaNbON2 photocatalyst acquired water oxidation ability for the first time, which was improved by combining CoOx as cocatalyst. Annealed LaNbON2 derived from La3NbO7 had smaller particle size, higher concentration of anion vacancies, bigger EF-EVBM and better performance for photocatalytic oxygen evolution reaction than LaNbON2 derived from LaNbO4.

关键词： Photocatalysis Perovskite oxynitride Water splitting anion vacancy Valence band

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