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Intrinsic electronic structure and nodeless superconducting gap of YBa_(2)Cu_(3)O_(7)-σ observed by spatially-resolved laser-based angle resolved photoemission spectroscopy

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Chinese Physics B 2023年第11期32卷 263-268页

作者：李帅帅苗泰民殷超辉李颖昊闫宏涛陈逸雯梁波陈浩朱文培张申金王志敏张丰丰杨峰彭钦军林成天毛寒青刘国东许祖彦赵林周兴江 National Laboratory for Superconductivity Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China Technical Institute of Physics and Chemistry Chinese Academy of SciencesBeijing 100190China Max Planck Institute for Solid State Research Heisenbergstrasse1D-70569 StuttgartGermany Songshan Lake Materials Laboratory Dongguan 523808China

The spatially-resolved laser-based high-resolution angle resolved photoemission spectroscopy(ARPES) measurements have been performed on the optimally-doped YBa_(2)Cu_(3)O_(7)-σ(Y123) superconductor. For the first time, we found the region from the cleaved surface that reveals clear bulk electronic properties. The intrinsic Fermi surface and band structures of Y123 were observed. The Fermi surface-dependent and momentum-dependent superconducting gap was determined which is nodeless and consistent with the d+is gap form.

关键词： YBCO angle resolved photoemission spectroscopy electronic structure superconducting gap

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Electron doping induced semiconductor to metal transitions in ZrSe2 layers via copper atomic intercalation

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Nano Research 2018年第9期11卷 4914-4922页

作者： Zahir Muhammad Kejun Mu Haifeng Lv Chuanqiang Wu Zia ur Rehman Muhammad Habib Zhe Sun Xiaojun Wu Li Song National Synchrotron Radiation Laboratory CAS Center for Excellence in Nanoscience CAS Key Laboratory of Strongly-coupled Quantum Matter Physics University of Science and Technology of China Hefei 230029 China CAS Key Laboratory of Materials for Energy Conservation Synergetic Innovation Centre of Quantum Information & Quantum Physics CAS Center for Excellence in Nanoscience and Department of Material Science and Engineering University of Science and Technology of China Hefei 230026 China

Atomic intercalation in two-dimensional （2D） layered materials can be used to engineer the electronic structure at the atomic scale and generate tuneable physical and chemical properties which are quite distinct in comparison with the pristine material. Among them, electron-doped engineering induced by intercalation is an efficient route to modulate electronic states in 2D layers. Herein, we demonstrate a semiconducting to metallic phase transition in zirconium diselenide （ZrSe2） single crystals via controllable incorporation of copper （Cu） atoms. Our angle resolved photoemission spectroscopy （ARPES） measurements and first-principles density functional theory （DFT） calculations dearly revealed the emergence of conduction band dispersion at the M/L point of the Brillouin zone due to Cu-induced electron doping in ZrSe2 interlayers. Moreover, electrical measurements in ZrSe2 revealed semiconducting behavior, while the Cu-intercalated ZrSe2 exhibited a linear current-voltage curve with metallic character. The atomic intercalation approach may have high potential for realizing transparent electron-doping systems for many specific 2D-based nanoelectronic applications.

关键词： layered materials phase transition angle resolved photoemission spectroscopy electron doping

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A non-rigid shift of band dispersions induced by Cu intercalation in 2H-TaSe2

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Nano Research 2020年第2期13卷 353-357页

作者： Pengdong Wang Rashid Khan Zhanfeng Liu Bo Zhang Yuliang Li Sheng Wang Yunbo Wu Hongen Zhu Yi Liu Guobin Zhang Dayong Liu Shuangming Chen Li Song Zhe Sun National Synchrotron Radiation Laboratory University of Science and Technology of ChinaHefei 230029China Key Laboratory of Materials Physics Institute of Solid State PhysicsChinese Academy of SciencesP.0.Box 1129Hefei 230031China Key Laboratory of Strongly-coupled Quantum Matter Physics Chinese Academy of SciencesUniversity of Science and Technology of ChinaHefei 230026China CAS Centerfor Excellence in Superconducting Electronics(CENSE) Shanghai 200050China

The intercalation of metal is a promising method for the modulating electronic properties in transition metal dichalcogenides(TMDs).However,there still lacks enough knowledge about how the intercalated atoms directly impact the two-dimensional structural layers and modulate the band structures *** advantage of X-ray absorption fine structure and angle-resolved photoemission spectroscopy,we studied how Cu intercalation influences the host TaSe2 layers in Cu0.03TaSe2 *** intercalated Cu atoms form bonds with Se of the host layers,and there is charge transfer from Cu to *** examining the changes of band dispersions,we show that the variation of electronic structures is beyond a simple rigid band model with merely charge doping *** work'reveals that the unusual change of band dispersions is associated with the formation of bonds between the intercalated metal elements and anion ions in the host layers,and provides a reference for the comprehensive understanding of the electronic structures in intercalated materials.

关键词： transition metal dichalcogenides Cu-intercalation band shift angle resolved photoemission spectroscopy

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