Electron doping induced semiconductor to metal transitions in ZrSe2 layers via copper atomic intercalation

作     者：Zahir Muhammad Kejun Mu Haifeng Lv Chuanqiang Wu Zia ur Rehman Muhammad Habib Zhe Sun Xiaojun Wu Li Song 

作者机构：National Synchrotron Radiation Laboratory CAS Center for Excellence in Nanoscience CAS Key Laboratory of Strongly-coupled Quantum Matter Physics University of Science and Technology of China Hefei 230029 China CAS Key Laboratory of Materials for Energy Conservation Synergetic Innovation Centre of Quantum Information & Quantum Physics CAS Center for Excellence in Nanoscience and Department of Material Science and Engineering University of Science and Technology of China Hefei 230026 China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2018年第11卷第9期

页      面：4914-4922页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0701[理学-数学] 0702[理学-物理学] 070101[理学-基础数学] 

基　　金：support from the MOST 国家自然科学基金 CAS Key Research Program of Frontier Sciences CAS Interdisciplinary Innovation Team the CSC (Chinese Scholarship Council) Program support from Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Nankai University (111 project) Key Laboratory of the Ministry of Education for Advanced Catalysis Materials Zhejiang Key Laboratory for Reactive Chemistry on Solid Surfaces (Zhejiang Normal University) the Hefei Synchrotron Radiation Facility Spectroscopy, MCD the USTC Center for Micro and Nanoscale Research and Fabrication 

主　　题：layered materials phase transition angle resolved photoemission spectroscopy electron doping 

摘      要：Atomic intercalation in two-dimensional （2D） layered materials can be used to engineer the electronic structure at the atomic scale and generate tuneable physical and chemical properties which are quite distinct in comparison with the pristine material. Among them, electron-doped engineering induced by intercalation is an efficient route to modulate electronic states in 2D layers. Herein, we demonstrate a semiconducting to metallic phase transition in zirconium diselenide （ZrSe2） single crystals via controllable incorporation of copper （Cu） atoms. Our angle resolved photoemission spectroscopy （ARPES） measurements and first-principles density functional theory （DFT） calculations dearly revealed the emergence of conduction band dispersion at the M/L point of the Brillouin zone due to Cu-induced electron doping in ZrSe2 interlayers. Moreover, electrical measurements in ZrSe2 revealed semiconducting behavior, while the Cu-intercalated ZrSe2 exhibited a linear current-voltage curve with metallic character. The atomic intercalation approach may have high potential for realizing transparent electron-doping systems for many specific 2D-based nanoelectronic applications.