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A Design and Comparative Investigation of Graded AlxGa1–xN EBL for W-B0.375Ga N/W-B0.45GaN Edge Emitting Laser Diode on AlN Substrate

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Chinese Journal of Electronics 2022年第4期31卷 683-689页

作者： NIASS Mussaab I. WANG Fang LIU Yuhuai National Center for International Joint Research of Electronic Materials and Systems International Joint-Laboratory of Electronic Materials and Systems of Henan Province School of Information EngineeringZhengzhou University Zhengzhou Way Do Electronics Co.Ltd. Research Institute of Industrial Technology Co.Ltd. Zhengzhou University Institute of Materials and Systems for Sustainability Nagoya University

In this paper, we numerically demonstrated the possibility of using wurtzite boron gallium nitride(W-BGa N) as active layers(quantum well and quantum barriers) along with aluminum gallium nitride(Al Ga N) to achieve lasing at a deep ultraviolet range at 263nm for edge emitting laser diode. The laser diode structure simulations were conducted by using the CrosslightLASTIP software with a self-consistency model for varies quantity calculations. Moreover, multiple designed structures such as full and half have been achieved as well as the study of the effect of grading engineering/techniques at the electron blocking layer for linearly-graded-down and linearly-graded-up grading techniques were also emphasized. As a result, a maximum emitted power of 26 W,a minimum threshold current of 308 m A, a slope efficiency of 2.82 W/A, and a minimum p-type resistivity of0.228 Ω·cm from the different doping concentrations and geometrical distances were thoroughly observed and jotted down.

关键词： electron blocking layer edge emitting laser diode linearly-graded-down grading techniques gallium compounds quantum well lasers Lasing action in semiconductors wide band gap semiconductors slope efficiency crosslight-LASTIP software deep ultraviolet range linearly-graded-up grading techniques III-V semiconductors Semiconductor lasers II-VI and III-V semiconductors boron compounds substrate aluminium compounds Design of specific laser systems self-consistency model optical design techniques wurtzite boron gallium nitride quantum barriers aluminum gallium nitride

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AlInAs/GaInAs SUPERLATTICED NEGATIVEDIFFERENTIAL-RESISTANCE SWITCH（SNDRS） PREPARED BY MOCVD

AlInAs/GaInAs SUPERLATTICED NEGATIVEDIFFERENTIAL-RESISTANCE ...

引用

1998 International Conference on Microwave and Millimeter Wave Technology

作者： Wen-Chau Liu Shiou-Ying Cheng Wen-Lung Chang Hsi-Jen Pan Yung-Hsin Shie Department of Electrical Engineering National Cheng-Kung University

ISBN: (纸本)0780343085

＜正＞A new AlInAs/GaInAs superlatticed negative-differential-resistance switch（SNDRS） is fabricated successfully and demonstrated.A 5-period AlInAs/GalnAs superlattice is used to serve the resonant tunneling route and the confinement barrier for minority ***,an interesting threeterminal -controlled N-shaped multiple negative-differential-resistance（MNDR） phenomenon and transistor action are obtained for the studied SNDRS device in the saturation and forward active mode at room temperature,*** is believed that the N-shaped MNDR is resulted mainly from resonant tunneling within the 5-period AlInAs/GaInAs superlattice.

关键词： aluminium compounds indium compounds gallium arsenide III-V semiconductors semiconductor superlattices negative resistance devices semiconductor switches minority carriers resonant tunnelling vapour phase epitaxial growth superlatticed NDR switch negative-differential-resistance switch MOCVD preparation 5-period superlattice resonant tunneling confinement barrier minority carriers three-terminal-controlled NDR N-shaped multiple NDR phenomenon transistor action saturation mode forward active mode room temperature AlInAs-GaInAs

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