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  • 9 篇 alkaline slurry
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  • 9 篇 英文
检索条件"主题词=alkaline slurry"
9 条 记 录,以下是1-10 订阅
Electrochemical investigation of copper chemical mechanical planarization in alkaline slurry without an inhibitor
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Journal of Semiconductors 2014年 第2期35卷 141-146页
作者: 王傲尘 王胜利 刘玉岭 李炎 Institute of Microelectronics Hebei University of Technology
This work investigates the static corrosion and removal rates of copper as functions of H202 and FA/OIIconcentration, and uses DC electrochemical measurements such as open circuit potential (OCP), Tafel ana- lysis, ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Stability for a novel low-pH alkaline slurry during the copper chemical mechanical planarization
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Journal of Semiconductors 2014年 第8期35卷 171-176页
作者: 陈国栋 刘玉岭 王辰伟 刘伟娟 蒋勐婷 袁浩博 Institute of Microelectronics Hebei University of Technology
: The stability of a novel low-pH alkaline slurry (marked as slurry A, pH = 8.5) for copper chemical mechanical planarization was investigated in this paper. First of all, the stability mechanism of the alkaline sl... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Effect of alkaline slurry on the electric character of the pattern Cu wafer
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Journal of Semiconductors 2011年 第7期32卷 150-152页
作者: 胡轶 刘玉岭 刘效岩 何彦刚 王立冉 张保国 Institute of Microelectronics Hebei University of Technology
For process integration considerations,we will investigate the impact of chemical mechanical polishing (CMP) on the electrical characteristics of the pattern Cu *** this paper,we investigate the impacts of the CMP p... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Evaluation of planarization performance for a novel alkaline copper slurry under a low abrasive concentration
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Journal of Semiconductors 2014年 第11期35卷 173-178页
作者: 蒋勐婷 刘玉岭 袁浩博 陈国栋 刘伟娟 Institute of Microelectronics Hebei University of Technology
A novel alkaline copper slurry that possesses a relatively high planarization performance is investigated under a low abrasive concentration. Based on the action mechanism of CMP, the feasibility of using one type of ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
A novel kind of TSV slurry with guanidine hydrochloride
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Journal of Semiconductors 2015年 第10期36卷 166-170页
作者: 洪姣 刘玉岭 张保国 牛新环 韩力英 School of Electronic Information Engineering Hebei University of Technology Tianjin Key Laboratory of Electronic Materials and Devices
The effect of a novel alkaline TSV (through-silicon-via) slurry with guanidine hydrochloride (GH) on CMP (chemical mechanical polishing) was investigated. The novel alkaline TSV slurry was free of any inhibitors... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
A new kind of chelating agent with low pH value applied in the TSV CMP slurry
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Journal of Semiconductors 2015年 第12期36卷 143-146页
作者: 洪姣 刘玉岭 张保国 牛新环 韩力英 School of Electronic Information Engineering Hebei University of Technology Tianjin Key Laboratory of Electronic Materials and Devices
TSV(through silicon via) is an emerging technology, which can realize micromation compared with the conventional packaging and extend Moore's law. Chemical mechanical polishing(CMP) is one of the most important s... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Planarization effect evaluation of acid and alkaline slurries in the copper interconnect process
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Journal of Semiconductors 2015年 第3期36卷 135-140页
作者: 胡轶 李炎 刘玉岭 何彦刚 Xinjiang Normal University School of Chemistry & Chemical Engineering Institute of Microelectronics Hebei University of Technology
We observed and analyzed the acid and HEBUT alkaline of Cu chemical mechanical polishing (CMP) slurry to evaluate their effects. Material analysis has shown that the planarity surfaces and the removal rate of alkali... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Effect of chelating agent concentration in alkaline Cu CMP process under the condition of different applied pressures
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Journal of Semiconductors 2014年 第11期35卷 188-192页
作者: 袁浩博 刘玉岭 蒋勐婷 刘伟娟 陈国栋 Institute of Microelectronics Hebei University of Technology
We propose the action mechanism of Cu chemical mechanical planarization (CMP) in an alkaline solution. Meanwhile, the effect of abrasive mass fraction on the copper removal rate and within wafer non-uniformity (W1... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Reducing the mechanical action of polishing pressure and abrasive during copper chemical mechanical planarization
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Journal of Semiconductors 2014年 第12期35卷 139-143页
作者: 蒋勐婷 刘玉岭 Institute of Microelectronics Hebei University of Technology
Chemical mechanical planarization(CMP) is a critical process in deep sub-micron integrated circuit manufacturing. This study aims to improve the planarization capability of slurry, while minimizing the mechanical ac... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论