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A new kind of chelating agent with low pH value applied in the TSV CMP slurry

A new kind of chelating agent with low pH value applied in the TSV CMP slurry

作     者:洪姣 刘玉岭 张保国 牛新环 韩力英 

作者机构:School of Electronic Information Engineering Hebei University of Technology Tianjin Key Laboratory of Electronic Materials and Devices 

出 版 物:《Journal of Semiconductors》 (半导体学报(英文版))

年 卷 期:2015年第36卷第12期

页      面:143-146页

核心收录:

学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

基  金:supported by the Major National Science and Technology Special Projects(No.2009ZX02308) the Fund Project of Hebei Provincial Department of Education,China(No.QN2014208) the Natural Science Foundation of Hebei Province,China(No.E2013202247) the Colleges and Universities Scientific Research Project of Hebei Province,China(No.Z2014088) 

主  题:low pH value alkaline slurry removal rate roughness 

摘      要:TSV(through silicon via) is an emerging technology, which can realize micromation compared with the conventional packaging and extend Moore's law. Chemical mechanical polishing(CMP) is one of the most important steps in the process of TSV manufacture, and it is an enabling technology to extend Moore's law in the past two decades. Low pressure, low abrasive and low p H value are the main requirements for copper *** this paper, the effect of different kinds of TSV slurry with FA/OⅡ or FA/O IV type chelating agent on CMP are studied. All kinds of slurry used in this study are alkaline with no added inhibitors. From the experiment results, it can be seen that the copper removal rate and surface roughness achieved by using the FA/OⅣ type chelating agent with a low p H value is superior to using the FA/OⅡ type chelating agent.

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