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2012 China Functional Materials Technology and Industry Forum

作者： Lei-Ming Yu De-Ying Luo Jun-Jie Li Jia-Xiu Man Zheng-Hong Lu Zhu Liu School of physics science and technology of Yunnan University

A single-carrier hole-only device of ITO/MoO/NPB/Al was used to measure the hole mobility of NPB layer,where NPB is a hole transport *** hole mobility of NPB at different electric fields was obtained from the hole transit time(τ) which was extracted from the negative differential susceptance(ΔB) as a function of *** eliminate the impact of the contact resistance on the mobility measurement,an equivalent circuit model has been introduced to calculate the capacitance and the conductance of the NPB *** fitting the Nyquist plot of the impedance spectroscopy using the equivalent circuit,the contact resistance can be extracted from the impedance *** is found that the mobility at low electric field is lower than what was reported in literature after the consideration of the contact *** is also found that the calculated hole mobility of the NPB layer follows the Poole-Frenkel’s rule.

关键词： admittance spectroscopy Hole mobility Single carrier device NPB Nyquist plot

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Electric properties of Ge quantum dot embedded in Si matrix

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Journal of Central South University of Technology 2005年第2期12卷 159-162页

作者：马锡英施维林 Institute of Photoelectrical Materials Department of Physics Shaoxing College of Arts and SciencesShaoxing 312000 China

The electric characteristics of Ge quantum dot grown by molecular beam epitaxy in Si matrix were investigated by admittance spectroscopy and deep level transient spectroscopy. The admittance spectroscopy measurements show that the activation energy of 0.341eV can be considered as the emitting energy of hole from the ground state of the quantum dot. And the capacitance variation with temperature of the sample shows a platform at various frequencies with reverse bias (0.5 V,) which indicates that the boundary of space charge region is located at the quantum dot layer where the large confined hole concentration blocks the further extension of space charge region. When the temperature increases from 120K to 200K, the holes in the dot emit out completely. The position of the platform shifting with the increase of the applied frequency shows the frequency effects of the charges in the quantum dot. The deep level transient spectroscopy results show that the charge concentration in the Ge quantum dot is a function of the pulse duration and the reverse bias voltage, the activation energy and capture cross-section of hole decrease with the increase of pulse duration due to the Coulomb charging effect. The valence-band offsets of hole in Ge dot obtained by admittance spectroscopy and deep level transient spectroscopy are 0.341 and 0.338eV, respectively.

关键词： Ge quantum dot admittance spectroscopy deep level transient spectroscopy

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The dependence of sintering temperature on Schottky barrier and bulk electron traps of ZnO varistors

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Science China(Technological Sciences) 2011年第2期54卷 375-378页

作者： LIU Jun HE JinLiang HU Jun LONG WangCheng State Key Laboratory of Power Systems Department of Electrical Engineering Tsinghua University Beijing 100084 China

In order to investigate the influence of sintering temperature on the Schottky barrier and bulk electron traps of ZnO varis- tors, ZnO-Bi2O3 based varistor ceramic samples were sintered at 1000, 1100, 1200 and 1300℃, respectively. The measured results indicate that the sample sintered at 1300℃ possesses the lowest voltage gradient and nonlinear coefficient, compared with other samples. The barrier height of the samples decreased as the sintering temperature increased, which resulted in the deterioration of nonlinearity. Furthermore, two bulk electron traps determined by admittance spectroscopy were generally independent of sintering temperature, which indicated that these two traps might originate from the intrinsic defects in ZnO lattice.

关键词： ZnO varistor sintering temperature Schottky barrier bulk electron trap admittance spectroscopy

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Chlorine-assisted Recovery of Performance Loss in CH3NH3PbI3 Solar Cells Caused by Low Purity of PbI2

Chlorine-assisted Recovery of Performance Loss in CH3NH3PbI3...

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第五届新型太阳能电池学术研讨会

作者： Minlin Jiang Yi Zhou Nanrun Zhou Lihua Gong Guangyong Li Institute of Advanced Study Nanchang University School of Information Engineering Nanchang University The Department of Electrical and Computer Engineering University of Pittsburgh

This work reports an exciting discovery that the performance loss in MAPbI solar cells due to low purity of PbI can be fully recovered by adding a small amount of CHNHCl(MACl). The averaged efficiency of MAPbI solar cells using low purity PbI is 14.16%, while that using high purity PbI is 16.39%. Excitingly, the averaged efficiency of MAPbI solar cells using low purity PbI is boosted to 16.58% by adding a small amount of MACl into MAPbI precursor, which is comparable to that from high purity PbI. Results from SEM and XRD indicate that the morphologies and structures of MAPbI thin films are not affected by the purity of PbI and the addition of small amount of Cl source. Further investigations using open-circuit voltage decay(OCVD) and admittance spectroscopy(AS) reveal that low purity of PbI leads to lower electron lifetime due to higher defect density, while the addition of Cl can suppress the defect density, resulting into higher electron lifetime. This discovery may offer a process route for fabricating low-cost, high-efficiency perovskite solar cells using low purity feedstocks, which would definitely expedite the development of environment-friendly perovskite solar cells.

关键词： perovskite solar cells MAPbI3 PbI2 admittance spectroscopy

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Chlorine-assisted recovery of performance loss in MAPbI3 solar cells caused by low purity of PbI2

Chlorine-assisted recovery of performance loss in MAPbI3 sol...

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第六届新型太阳能电池材料科学与技术学术研讨会

作者： Minlin Jiang Zuo Wang Yi Zhou Nanrun Zhou Lihua Gong Institute of Advanced Study Nanchang University School of Information Engineering Nanchang University

This work reports an exciting discovery that the performance loss in MAPbI solar cells due to low purity of PbI can be fully recovered by adding a small amount of Cl source(MACl). The averaged efficiency of MAPbI solar cells using low purity PbI2 is 14.16%, while that using high purity PbI is 16.39%. Excitingly, the averaged efficiency of MAPbI solar cells using low purity PbI is boosted to 16.58% by adding a small amount of MACl into MAPbI precursor, which is comparable to that from high purity PbI(Fig. 1) [1]. Results from SEM and XRD indicate that the morphologies and structures of MAPbI thin films are not affected by the purity of PbI2 and the addition of small amount of Cl source. Further investigations using open-circuit voltage decay(OCVD) and admittance spectroscopy(AS) reveal that low purity of PbI leads to lower electron lifetime due to higher defect density, while the addition of Cl can suppress the defect density, resulting into higher electron lifetime. This discovery may offer a great opportunity for fabricating low-cost, high-efficiency perovskite solar cells using low purity feedstocks, which would definitely expedite the development of environment-friendly perovskite solar cells.

关键词： perovskite solar cells MAPbI3 PbI2 admittance spectroscopy

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