The dependence of sintering temperature on Schottky barrier and bulk electron traps of ZnO varistors

作     者：LIU Jun HE JinLiang HU Jun LONG WangCheng 

作者机构：State Key Laboratory of Power Systems Department of Electrical Engineering Tsinghua University Beijing 100084 China 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2011年第54卷第2期

页      面：375-378页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 080801[工学-电机与电器] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Natural Science Foundations of China(Grant Nos.50425721 and 50737001) 

主　　题：ZnO varistor sintering temperature Schottky barrier bulk electron trap admittance spectroscopy 

摘      要：In order to investigate the influence of sintering temperature on the Schottky barrier and bulk electron traps of ZnO varis- tors, ZnO-Bi2O3 based varistor ceramic samples were sintered at 1000, 1100, 1200 and 1300℃, respectively. The measured results indicate that the sample sintered at 1300℃ possesses the lowest voltage gradient and nonlinear coefficient, compared with other samples. The barrier height of the samples decreased as the sintering temperature increased, which resulted in the deterioration of nonlinearity. Furthermore, two bulk electron traps determined by admittance spectroscopy were generally independent of sintering temperature, which indicated that these two traps might originate from the intrinsic defects in ZnO lattice.