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Growth of zno thin films on Lattice-Matched Substrates by Pulsed-Laser Deposition

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Chinese Physics Letters 2003年第12期20卷 2235-2238页

作者：余庆选徐波吴气虹廖源王冠中方容川 StructureResearchLaboratory UniversityofScienceandTechnologyofChinaHefei230026 DepartmentofPhysics UniversityofScienceandTechnologyofChinaHefei230026

zno films were grown on GaN and sapphire substrates by pulse laser deposition, respectively. The effects of crystalline quality on the optical properties in zno epitaxial layers were investigated by x-ray rocking curve and photoluminescence. The x-ray rocking curve of the film deposited on the GaN substrate has the full width half maximum (FWHM) of 0.45 degrees, whereas the FWHM of the x-ray θ-rocking curve of the zno film deposited on a sapphire substrate was measured to be about 0.77 degrees. In photoluminescence (PL) measurement, the intensity of UV photoluminescence for the zno film on the GaN substrate decreased by approximately two orders of magnitude in comparison with that of the zno film on sapphire. It is concluded that the UV luminescence intensity almost does not depend on the textured growth of the zno thin film.

关键词： zno thin films Lattice-Matched Substrates Pulsed-Laser Deposition

The effects of post-thermal annealing on the optical parameters of indium-doped zno thin films

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Chinese Physics B 2012年第4期21卷 491-495页

作者：彭丽萍方亮吴卫东王雪敏李丽 Research Center of Laser Fusion China Academy of Engineering PhysicsMianyang 621900China Department of Applied Physics Chongqing UniversityChongqing 400030China College of Mathematics and Physics Chongqing University of Posts and TelecommunicationsChongqing 400065China

Indium-doped zno thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400℃ to 800℃. The band gap of the as-deposited zno：In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400℃ to 800℃.

关键词： zno thin films optical constants annealing transmittance spectra

Preparation of Nano-Crystalline zno thin films

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稀有金属材料与工程 2006年第A03期35卷 504-505页

作者： Huapin Chen Guangzhong Xie Tao Wang Yadong Jiang Lin Qiu Ministry of Education Key Laboratory of Novel Transducers School of Opto-electrical Information University of Electronic Science ＆ Technology of China Chengdu 610054 China

Zinc oxide (zno) thin films were identified as very suitable piezoelectric material for SAW on the basis of its relatively high electromechanical coupling coefficient,as well as high resistivity for low insertion loss and little distortion in the *** this paper zno thin films were deposited on Si(100) substrate covered with SiO_2 using a reactive DC magnetic sputtering system from a zinc *** effects of various deposition parameters on structural and performances have been investigated through *** and experimental results are also discussed in this *** showed that the prepared zno films had strongly c-axis *** composition of the film was also determined through high-resolution photoelectron spectroscopy (XPS).AFM showed that the films had smooth surface and that the crystallite sizes of deposited films were in the range 30 nm～50 *** above results showed that the films deposited by magnetic sputtering met the demands for surface acoustic wave (SAW) devices.

关键词： magnetic sputtering zno thin films SAW resistivity

Photoluminescence properties of zno thin films prepared by DC magnetron sputtering

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Journal of Central South University of Technology 2008年第4期15卷 449-453页

作者：杨兵初刘晓艳高飞马学龙 School of Physics Science and Technology Central South University

zno thin films were prepared by direct current(DC)reactive magnetron sputtering under different oxygen partial *** then the samples were annealed in vacuum at 450℃.The effects of the oxygen partial pressures and the treatment of annealing in vacuum on the photoluminescence and the concentration of six intrinsic defects in zno thin films such as oxygen vacancy(VO),zinc vacancy(VZn),antisite oxygen(OZn),antisite zinc(zno),interstitial oxygen(Oi)and interstitial zinc(Zni)were *** results show that a green photoluminescence peak at 520 nm can be observed in all the samples,whose intensity increases with increasing oxygen partial pressure;for the sample annealed in vacuum,the intensity of the green peak increases as *** green photoluminescence peak observed in zno may be attributed to zinc vacancy,which probably originates from transitions between electrons in the conduction band and zinc vacancy levels,or from transitions between electrons in zinc vacancy levels and up valence band.

关键词： zno thin films photoluminescence zinc vacancy magnetron sputtering

Effects of high-dose Ge ion implantation and post-implantation annealing on zno thin films

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Chinese Physics B 2007年第4期16卷 1119-1124页

作者：薛书文祖小涛苏海桥郑万国向霞邓宏杨春容 Department of Applied Physics University of Electronic Science and Technology of China Chengdu 610054 China Department of Physics Zhanjiang Normal College Zhanjiang 524048 China Laser Fusion Research Center China Academy of Engineering Physics Mianyang 621900 China School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China Chengdu 610054 China

This paper reports that ion implantation to a dose of 1 ×10^17 ions/cm^2 was performed on c-axis-orientated zno thin films deposited on （0001） sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted zno films were annealed in argon ambient at different temperatures from 600 - 900 ℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the zno films were investigated by x-ray diffraction （XRD）, photoluminescence （PL）. It was found that the intensities of （002） peak and near band edge （NBE） exitonic ultraviolet emission increased with increasing annealing temperature from 600- 900 ℃. The defect related deep level emission （DLE） firstly increased with increasing annealing temperature from 600 - 750 ℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at ～850℃ and ～750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of zno films increased continuously with increasing annealing temperature from 600 - 900 ℃.

关键词： zno thin films thermal annealing ion implantation photoluminescence

Induced growth of high quality zno thin films by crystallized amorphous zno

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Chinese Physics B 2006年第11期15卷 2710-2712页

作者：王志军宋立军李守春吕有明田云霞刘嘉宜王连元 Physics College of Jilin University Changchun 130026 China Department of Materials Science and Engineering Kyoto University Sakyo Kyoto 606-8501 Japan Dean Office Changchun University Changchun 130022 China Laboratory of Excited State Processes of Chinese Academy of Sciences Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun 130033 China

This paper reports the induced growth of high quality zno thin film by crystallized amorphous zno. Firstly amorphous zno was prepared by solid-state pyrolytic reaction, then by taking crystallized amorphous zno as seeds （buffer layer）, zno thin films have been grown in diethyene glycol solution of zinc acetate at 80 ℃. X-ray Diffraction curve indicates that the films were preferentially oriented [001] out-of-plane direction of the zno. Atomic force microscopy and scanning electron microscopy were used to evaluate the surface morphology of the zno thin film. Photoluminescence spectrum exhibits a strong ultraviolet emission while the visible emission is very weak. The results indicate that high quality zno thin film was obtained.

关键词： amorphous zno Induced growth zno thin films

Electrodeposition and Characterization of zno thin films

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Semiconductor Photonics and Technology 2007年第3期13卷 210-214页

作者： HUANG Yan-wei YAO Ning ZHANG bing-lin Material Physics Laboratory of Education Ministry of China Department of Physics of Zhengzhou University Zhengzhou 450052 CHN

thin films of zno were electrodeposited from an aqueous solution of Zn（NO3 ）2 on indium tin oxide（ITO）-covered glass substrate. The analysis of X-ray diffraction（XRD） and scanning electron micrograph （SEM） indicated that the obtained zno films had a compact hexagonal wurtzite type structure with preferable （002） growth direction. A sharp near-UV emission peak located at 380 nm and a strong orange-red emission peak located at 593 nm were observed in the photoluminescence, when excited with 325 nm wavelength at room temperature. Then the prepared zno films were introduced as anode phosphors into the field emission test. It was found that orange-red cathode-luminescence was observed and the luminescent brightness was enhanced by annealing. When annealing temperature increased about 600 ℃, the photoluminescence with peak of 531 nm and the green cathode-luminescence were observed. The tests showed that the brightness of about 2 × 102 cd/m^2 was obtained at electric field of 2 V/μm for annealed sample. The results revealed that the film could be a good kind of low-voltage drived cathode-luminescence phosphor.

关键词： electrodeposition zno thin films photoluminescence cathode-luminescence field emission phosphor

Effect of Thickness of SnO_2:F over Layer on Certain Physical Properties of zno:Al thin films for Opto-electronic Applications

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Journal of Materials Science & Technology 2012年第11期28卷 999-1003页

作者： P. Ravikumar K. Ravichandran B. Sakthivel P.G and Research Department of Physics AVVM Sri Pushpam College (Autonomous)

Bilayered FTO/AZO （fluorine doped tin oxide/aluminium doped zinc oxide） films were fabricated using a simple, cost effective spray pyrolysis technique. X-ray diffraction （XRD） profiles of bilayered films showed that in the case of lower thickness FTO over layers, （002） plane of zno phase had the highest intensity, whereas the predominance was changed in favour of （200） plane of SnO2 phase for higher thickness FTO over layer. UV studies showed that bilayered FTO/AZO films exhibited a sharp absorption edge as that of AZO film. The decrease in the photoluminescence （PL） peak at 420 nm with increasing FTO over layer thickness indicated a reduction in the zinc vacancies which caused a reduction in the sheet resistance （Rsh）. Electrical studies revealed that, eventhough the Rsh value （916Ω/□） of bilayered FTO （313 nm）/AZO （314 nm） film was found to be higher than that of FTO single layer film （72Ω/□）, it was much lower than that of AZO single layer film （5661Ω/□））. The atomic force microscopy （AFM） images reflect the characteristic features of both zinc oxide and tin oxide films.

关键词： zno thin films Sn02 Semiconductor materials Optical properties Electricalproperties Atomic force microscopy (AFM)

Structural and optical properties of Cr doped zno crystalline thin films deposited by reactive electron beam evaporation technique

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Progress in Natural Science:Materials International 2013年第1期23卷 64-69页

作者： Amjid Iqbal Arshad Mahmood Taj Muhammad Khan Ejaz Ahmed National Institute of Laser and Optronics(NILOP) P.O.NiloreIslamabad 45650Pakistan Physics Division PINSTECH P.O.NiloreIslamabad 45650Pakistan

zno and Cr-doped zno thin films are grown on to glass substrates using reactive electron beam(e-beam) evaporation *** of structural,morphological,and optical properties with Cr doping is investigated.X-ray diffraction(XRD) studies show that the films are polycrystalline in nature with single *** dispersive spectroscopy(EDS) results demonstrate that Cr ions are substitutionally incorporated into *** force microscopy(AFM) reveals that the films present a compact surface and root mean squared(RMS) roughness increased with Cr *** optical band gap energy Eg of the films has been determined using Transmission data by spectrophotometer and *** band gap energy found to be decreased with increasing Cr doping *** optical constants(refractive index,extinction coefficient) are calculated using ellipsometry and found to increase with Cr doping concentration.

关键词： Cr doping thin film zno thin films Roughness Ellipsometry Optical constants