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Current transport in zno/si heterostructure grown by laser molecular beam epitaxy

Chinese Physics B 2012年第9期21卷 440-444页

作者：滕晓云吴艳华于威高卫傅广生 College of Physics Science and Technology University of Hebei University

The n-zno/p-si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type zno film on p-type si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15 V ~ V 〈 0.6 V, the transport property is dominated by diffusion or recombination in the junction space charge region, while at higher voltages （V 〉 0.6 V）, the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm^2, respectively.

关键词： zno/si heterostructure current transport laser molecular beam epitaxy

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Electrical and deep levels characteristics of zno/si heterostructure by MOCVD deposition

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Chinese Physics B 2008年第6期17卷 2292-2296页

作者：刘磁辉刘秉策付竹西 Department of Physics University of Science and Technology of China Department of Electron Science and Technology University of Science and Technology of China

zno films have been prepared on p-type si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, the deep-level transient spectroscopy （DLTS） and the photoluminescence （PL） spectra of the samples were measured. DLTS shows two deep-level centres of E1 （Ec-0.13±0.02eV） and E2 （Ec-0.43±0.05eV） in sample 1202a, which has a zno/p-si heterostructure. A deep level at Ec-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.

关键词： MOCVD zno/si heterostructure PL spectra deep-level emission

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Grain boundary layer behavior in zno/si heterostructure

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Journal of Semiconductors 2010年第3期31卷 15-18页

作者：刘秉策刘磁辉徐军易波 Department of Physics University of Science and Technology of China

The grain boundary layer behavior in zno/si heterostucture is investigated. The current-voltage （I-V） curves, deep level transient spectra （DLTS） and capacitance-voltage （C-V） curves are measured. The transport currents ofzno/si heterojunction are dominated by grain boundary layer as high densities ofinterfacial states existed. The interesting phenomenon that the crossing of in I-V curves of zno/si heterojunction at various measurement temperatures and the decrease of its effective barrier height with the decrement of temperature are in contradiction with the ideal heterojunction thermal emission model is observed. The details will be discussed in the following.

关键词： zno/si heterostructure grain boundary layer intrinsic defects deep level

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