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Anodic oxidation of azo dye C.I. Acid Red 73 by the yttrium-doped Ti/SnO2-Sb electrodes

Frontiers of Chemical Science and Engineering 2013年第3期7卷 338-346页

作者： Li XU Zhi GUO Lishun DU School of Chemical Engineering and Technology Tianjin University Tianjin 300072 China Tianjin Key Laboratory of Membrane Science and Desalination Technology Tianjin University Yianjin 30007Z China Hualu Engineering & Technology Co. Ltd Xi'an 710065 China

This work was conducted to study the ability of anodic oxidation of azo dye C.I. Acid Red 73 （ART3） using the yttrium-doped Ti/SnO2-Sb electrodes. The effects of Sb doping level, yttrium doping level, thermal decomposition temperature and cycle times of dip-coating thermal decomposition on the properties of the electrodes were investigated. The results showed that the excellent electrochemical activity of Ti/SnO2-Sb-Y electrode can be achieved at a 7：1 molar ratio of Sn：Sb and thermal decomposition temperature of 550~C. Moreover when the cycle times of dip-coating and thermal decomposition were up to 10 times, the performance of the electrode tends to be stable. The Ti/SnO2-Sb electrodes doped with yttrium （0.5 tool-%） showed the most excellent electrochemical activity. In addition, the influences of operating variables, including current density, initial pH, dye concentration and support electrolyte, on the colour removal, chemical oxygen demand （COD） removal and current efficiency were also investigated. Our results confirmed that the current efficiency increased with the concentrations of dye and sodium chloride. Moreover, increasing the current density and the initial pH would reduce the current efficiency.

关键词： SnO2-Sb yttrium doping anodic oxidation azo dyes

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Multi-level phase-change memory with ultralow power consumption and resistance drift

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Science Bulletin 2021年第21期66卷 2217-2224,M0004页

作者： Bin Liu Kaiqi Li Wanliang Liu Jian Zhou Liangcai Wu Zhitang Song Stephen R.Elliott Zhimei Sun School of Materials Science and Engineering Beihang UniversityBeijing 100191China Center for Integrated Computational Materials Engineering International Research Institute for Multidisciplinary ScienceBeihang UniversityBeijing 100191China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China College of Science Donghua UniversityShanghai 201620China Department of Chemistry University of CambridgeCambridge CB21EWUK Physical and Theoretical Chemistry Laboratory University of OxfordOxford OX13QZUK

By controlling the amorphous-to-crystalline relative volume,chalcogenide phase-change memory materials can provide multi-level data storage(MLS),which offers great potential for high-density storageclass memory and neuro-inspired ***,this type of MLS system suffers from high power consumption and a severe time-dependent resistance increase(‘‘drift")in the amorphous phase,which limits the number of attainable storage ***,we report a new type of MLS system in yttriumdoped antimony telluride,utilizing reversible multi-level phase transitions between three states,i.e.,amorphous,metastable cubic and stable hexagonal crystalline phases,with ultralow power consumption(0.6–4.3 p J)and ultralow resistance drift for the lower two states(power-law exponentyttrium,while the evident reversible cubic-to-hexagonal transition is attributed to the sequential and directional migration of Sb ***,the decreased heat dissipation of the material and the increase in crystallinity contribute to the overall high *** study opens a new way to achieve advanced multi-level phase-change memory without the need for complicated manufacturing procedures or iterative programming operations.

关键词： Phase-change memory Multi-level storage Antimony telluride yttrium doping Power consumption Resistance drift

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