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Degradation of organometallic perovskite solar cells induced by trap states

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Degradation of organometallic perovskite solar cells induced...

Iodine-doped graphite carbon nitride for enhancing photovoltaic device performance via passivation trap states of triple cation perovskite films

第四届新型太阳能电池学术研讨会

作者： Jun Ji Shangyi Dou Chunlan Zhou Endong Jia Dong Wei Peng Cui Meicheng Li North China Electric Power University Institute of Electrical Engineering Academia Sinica

The degradation of organometallic perovskite solar cells(PSCs) is the key bottleneck hampering their developments, which is typically ascribed to the decomposition of perovskite(CHNHPbI).However, we hold the different opinion that the increased trap states induced by the increased defects at the surface of perovskite result the original degradation of the *** of PSCs is observed to be significant, with the efficiency decreased to 70% origin performance in ambient air for 7 ***, no obvious decomposition or structural evolution of the perovskite was observed, except the notable degradation phenomenon of the *** degradation of PSCs derives from deteriorated photocurrent and fill factor, which are proved to be induced by increased trap states for enlarged carrier recombination in degraded *** increased trap states in PSCs over storage time are probably induced by the increased defects at the surface of *** trap states induced degradation provides a physical insight into the degradation mechanisms of ***, as the investigations were performed on real PSCs instead of individual perovskite films, the findings here present one of their actual degradation mechanisms.

关键词： perovskite solar cells degradation trap states

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Iodine-doped graphite carbon nitride for enhancing photovolt...

Ligand effects on electronic and optoelectronic properties of two-dimensional PbS necking percolative superlattices

第七届新型太阳能电池材料科学与技术学术研讨会

作者： Wei Cao Kaifeng Lin Yulin Yang School of Chemistry and Chemical Engineering Harbin Institute of Technology

Up to now,the organic and inorganic hybrid perovskite solar cells have developed rapidly and obtained superior photovoltaic ***,the intrinsic trap states in solution-processed perovskite are still the critical issue hindering its ***,in order to passivate the trap states in the triple cation perovskite film,the iodine-doped graphite carbon nitride(g-CNI) was developed as an addictive to modify the perovskite *** doped iodine in g-CNI can interact with under-coordinated Pb ions at the grain boundaries and surface of perovskite materials and the trap states can be effectively passivated,indicated by the characterization *** photoluminescence measurements and electrochemical impedance spectroscopy characterized that the reduction of trap states density inhibits the recombination of charge carriers,facilitates the extraction and transport of charge ***,the devices of perovskite with g-CNI achieved a champion PCE of 18.28% which is higher than that of the control devices(16.57%).

关键词： iodine-doped graphite carbon nitride trap states charge recombination perovskite solar cells

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Nano Research 2017年第4期10卷 1249-1257页

作者： Man Zhao Defang Ding Fangxu Yang Dawei Wang Jiawei Lv Wenping Hu Chenguang Lu Zhiyong Tang CAS Key Laboratory of Nanosystem and Hierarchical Fabrication CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology Beijing 100190 China University of Chinese Academy of Sciences 19 A Yuquan Rd Shijingshan District Beijing 100049 China Key Laboratory of Molecular Optoelectronic Sciences School of Science Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering Tianjin 300072 China

The inter-nanocrystal （NC） distance, necking degree, ordering level, and NC surface ligands all affect the electronic and optoelectronic properties of NC solids. Herein, we introduce a unique PbS structure of necking percolative superlattices to exclude the morphological factors and study the effect of ligands on the NC properties. X-ray photoelectron spectroscopy data indicate that 1,2-ethanedithiol （EDT）, oxalic acid, mercaptopropionic acid, and NH4SCN （SCN） ligands were attached to the surface of NCs by substrate-supported Iigand exchange. Field-effect transistors were tested and photodetector measurements were performed to compare these NC solids. An SCN-treated film had the highest mobility and responsivity under high-power intensity irradiation owing to its high carrier density, whereas an EDT-treated film had the lowest mobility, photocurrent, and dark current. These findings introduce new avenues for choosing suitable ligands for NC applications.

关键词： nanocrystals necking percolative superlattices ligand mobility trap states

Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position

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Chinese Physics B 2011年第5期20卷 347-352页

作者：张安赵小如段利兵刘金铭赵建林 Key Laboratory of Space Applied Physics and Chemistry of Ministry of Education and College of Science Northwestern Polytechnical University

The dependence of transistor characteristics on grain boundary （GB） position in short-channel ZnO thin film transistors （TFTs） has been investigated using two-dimensional numerical simulations. To simulate the device accurately, both tail states and deep-level states are taken into consideration. It is shown that both the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position, which is different from polycrystalline Si （poly-Si） TFTs. By analysing the mechanism of the carrier transportation in the device, it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with CB position.

关键词： grain boundary ZnO thin film transistors trap states simulation

Modulation of carrier lifetime in MoS2 monolayer by uniaxial strain

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Chinese Physics B 2020年第7期29卷 182-187页

作者： Hao Hong Yang Cheng Chunchun Wu Chen Huang Can Liu Wentao Yu Xu Zhou Chaojie Ma Jinhuan Wang Zhihong Zhang Yun Zhao Jie Xiong Kaihui Liu State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics Collaborative Innovation Center of Quantum MatterSchool of PhysicsPeking UniversityBeijing 100871China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China School of Chemistry and Chemical Engineering Beijing Institute of TechnologyBeijing 100081China

Carrier lifetime is one of the most fundamental physical parameters that characterizes the average time of carrier recombination in any *** control of carrier lifetime is the key to optimizing the device function by tuning the electro-optical conversion quantum yield,carrier diffusion length,carrier collection process,*** now,the prevailing modulation methods are mainly by defect engineering and temperature control,which have limitations in the modulation direction and amplitude of the carrier ***,we report an effective modulation on the ultrafast dynamics of photoexcited carriers in two-dimensional(2D)MoS2 monolayer by uniaxial tensile *** combination of optical ultrafast pump-probe technique and time-resolved photoluminescence(PL)spectroscopy reveals that the carrier dynamics through Auger scattering,carrier-phonon scattering,and radiative recombination keep immune to the *** strikingly,the uniaxial tensile strain weakens the trapping of photoexcited carriers by defects and therefore prolongs the corresponding carrier lifetime up to 440%per percent applied *** results open a new avenue to enlarge the carrier lifetime of 2D MoS2,which will facilitate its applications in high-efficient optoelectronic and photovoltaic devices.

关键词： two-dimensional materials carrier dynamics strain trap states

Analytical drain current model for amorphous IGZO thin-film transistors in above-threshold regime

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Journal of Semiconductors 2011年第7期32卷 34-37页

作者：何红宇郑学仁 Faculty of Physics and Optoelectronic Engineering Guangdong University of Technology School of Electronic and Information Engineering South China University of Technology

An analytical drain current model is presented for amorphous In-Ga-Zn-oxide thin-film transistors in the above-threshold regime,assuming an exponential trap states density within the *** a charge sheet approximation,the trapped and free charge expressions are calculated,then the surface potential based drain current expression is ***,threshold voltage based drain current expressions are presented using the Taylor expansion to the surface potential based drain current *** calculated results of the surface potential based and threshold voltage based drain current expressions are compared with experimental data and good agreements are achieved.

关键词： amorphous In-Ga-Zn-oxide(a-IGZO) thin-film transistors(TFTs) surface potential threshold voltage trap states

Fast and direct identification of SARS-CoV-2 variants via 2D InSe field-effect transistors

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InfoMat 2023年第2期5卷 120-130页

作者： Duo Xu Junji Li Yunhai Xiong Han Li Jialin Yang Wenqiang Liu Lianfu Jiang Kairui Qu Tong Zhao Xinyu Shi Shengli Zhang Dan Shan Xiang Chen Haibo Zeng MIIT Key Laboratory of Display Materials and Devices School of Materials Science and EngineeringNanjing University of Science and TechnologyNanjingPeople's Republic of China School of Environmental and Biological Engineering Nanjing University of Science and TechnologyNanjingPeople's Republic of China

As the COVID-19 pandemic evolves and new variants emerge,the development of more efficient identification approaches of variants is urgent to prevent continuous outbreaks of ***-effect transistors(FETs)with two-dimensional(2D)materials are viable platforms for the detection of virus nucleic acids(NAs)but cannot yet provide accurate information on NA ***,2D Indium selenide(InSe)FETs were used to identify SARSCoV-2 *** device's mobility and stability were ensured by atomic layer deposition(ALD)of Al_(2)O_(3).The resulting FETs exhibited sub-fM detection limits ranging from 10^(–14)M to 10^(–8)*** recognition of single-nucleotide variations was achieved within 15 min to enable the fast and direct identification of two core mutations(L452R,R203M)in Delta genomes(ptrap states in oxidized InSe(InSe_(1-x)O_(x))after ALD,resulting in traps-involved carrier transport responsive to the negative charges of *** sum,the proposed approach might highly provide epidemiological information for timely surveillance of the COVID pandemic.

关键词： 2D InSe field-effect transistors SARS-CoV-2 single-nucleotide variations trap states

Kelvin probe force microscopy for perovskite solar cells

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Science China Materials 2019年第6期62卷 776-789页

作者： Zhuo Kang Haonan Si Mingyue Shi Chenzhe Xu Wenqiang Fan Shuangfei Ma Ammarah Kausar Qingliang Liao Zheng Zhang Yue Zhang State Key Laboratory for Advanced Metals and Materials School of Materials Science and EngineeringUniversity of Science and Technology Beijing Beijing Municipal Key Laboratory of New Energy Materials and Technologies University of Science and Technology Beijing

Kelvin probe force microscopy(KPFM) could identify the local work function of surface at nanoscale with high-resolution on the basis of simultaneous visualization of surface topography, which provides a unique route to in-situ study of the surface information like the composition and electronic states. Currently, as a non-destructive detection protocol, KPFM demonstrates the unique potential to probe the basic nature of perovskite materials that is extremely sensitive to water, oxygen and electron beam irradiation. This paper systematically introduces the fundamentals and working mode of KPFM, and elaborates the promising applications in perovskite solar cells for energy band structures and carrier transport dynamics, trap states, crystal phases, as well as ion migration explorations. The comprehensive understanding of such potential detection engineering may provide novel and effective approaches for unraveling the unique properties of perovskite solar cells.

关键词： Kelvin probe force microscopy perovskite solar cells carrier transport dynamics trap states ion migration

Air-Retreatment Strategy for Efficient Inverted Perovskite Solar Cells

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Air-Retreatment Strategy for Efficient Inverted Perovskite S...