Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position

作     者：张安 赵小如 段利兵 刘金铭 赵建林 

作者机构：Key Laboratory of Space Applied Physics and Chemistry of Ministry of Education and College of ScienceNorthwestern Polytechnical University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2011年第20卷第5期

页      面：347-352页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 50872112) NPU Foundation for Fundamental Research,China (Grant No. JC201017) 

主　　题：grain boundary ZnO thin film transistors trap states simulation 

摘      要：The dependence of transistor characteristics on grain boundary （GB） position in short-channel ZnO thin film transistors （TFTs） has been investigated using two-dimensional numerical simulations. To simulate the device accurately, both tail states and deep-level states are taken into consideration. It is shown that both the transfer and output characteristics of ZnO TFTs change dramatically with varying GB position, which is different from polycrystalline Si （poly-Si） TFTs. By analysing the mechanism of the carrier transportation in the device, it is revealed that the dependence is derived from the degrees of carrier concentration descent and mobility variation with CB position.