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Chinese Physics B 2018年第4期27卷 543-550页

作者： Xu-Yang Li Zhi-Nong Yu Jin Cheng Yong-Hua Chen Jian-She Xue Jian Guo Wei Xue School of Optics and Photonics and Beijing Engineering Research Center of Mixed Reality and Advanced Display Beijing Institute of Technology Beijing 100081 China Beijing BOE Optoelectronics Technology Co. Ltd Beijing 100176 China

In this study,indium oxide（In2O3） thin-film transistors（TFTs） are fabricated by two kinds of low temperature solution-processed technologies（Ta ≤ 300℃）,i.e.,water-based（DIW-based） process and alkoxide-based（2-ME-based）*** thickness values,crystallization properties,chemical structures,surface roughness values,and optical properties of In2O3 thin-films and the electrical characteristics of In2O3 TFTs are studied at different annealing *** annealing at higher temperature leads to an increase in the saturation mobility（μsat） and a negative shift in the threshold voltage（VTH）.The DIW-based processed In2O3-TFT annealed at 300℃ exhibits excellent device performance,and one annealed at 200℃ exhibits an acceptable μsat of 0.86 cm^2/V·s comparable to that of a-Si：H TFTs,whereas the 2-ME-based TFT annealed at 300℃ exhibits an abundant μsat of 1.65 cm^2/Vs and one annealed at 200℃ is *** results are attributed to the fact that the DIW-based process induces a higher degree of oxidation and less defect states than the 2-ME-based process at the same *** DIW-based process for fabricating the In2O3 TFT opens the way for the development of nontoxic,low-cost,and low-temperature oxide electronics.

关键词： water-based process alkoxide-based process annealing temperature thin-film transistors

Graphene quantum dots modulated solution-derived InGaO thin-film transistors and stress stability exploration

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Rare Metals 2023年第7期42卷 2294-2306页

作者： Xiao-Fen Xu Gang He Lei-Ni Wang Wen-Hao Wang Xiao-Yu Wu School of Materials Science and Engineering Anhui UniversityHefei230601China

Graphene quantum dots(GQDs)doped InGaO(IGO)thin film transistors(TFTs)have been fabricated based on solution-driven ZrO_(x) as gate *** to pure IGO TFTs,superior electrical performance of the GQDs-IGO TFTs can be achieved by adjusting the doping *** has been demonstrated that GQDs-modified IGO TFTs devices with GQDs doping content of0.3 mg·ml^(-1)have the optimized performances,including field-effect mobility(μ_(FE))of 22.02 cm^(2)·V^(-1)·s^(-1),on/off current ratio(I_(on)/I_(off))of 7.06×10^(7),subthreshold swing(SS)of 0.09 V·dec^(-1),hysteresis of 0.04 V and interfacial trap states(D_(it))of 1.03×10^(12)cm^(-2).In addition,bias stress and illumination stress tests have been performed and excellent stability has been achieved for optimized *** GQDs-IGO TFTs device showed smaller threshold voltage shift of 0.12 and 0.04 V under positive bias stress(PBS)test and negative bias stress(NBS)test for 3600 s,*** it showed smaller threshold voltage shift of 0.27 and 0.34 V for red light under the PBS and NBS test for 3600 s,***,it showed smaller threshold voltage shift of0.20 and 0.22 V for green light under PBS and NBS test for3600 s,*** also showed smaller threshold voltage shift of 0.17 and 0.12 V for blue under the positive bias illumination stress(PBIS)test and negative bias illumination stress(NBIS)test for 3600 s,*** noise(LFN)characteristics of GQDs-IGO/ZrO_(x)TFTs indicated that the noise source came from the fluctuations in ***,a low voltage resistor-loaded unipolar inverter has been built based on GQDs-IGO/ZrO_(x)TFT,demonstrating good dynamic response behavior and a maximum gain of *** experimental results have suggested that solution-processed GQDs-IGO/ZrO_(x)TFT may envision potential applications in low-cost and large-area electronics.

关键词： Graphene quantum dots doped InGaO(GQDs-IGO) thin-film transistors Stability Inverter Low-frequency noise

Schottky barrier modulation of bottom contact SnO_(2) thin-film transistors via chloride-based combustion synthesis

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Journal of Materials Science & Technology 2023年第17期148卷 199-208页

作者： Bongho Jang Junhee Lee Hongki Kang Jaewon Jang Hyuk-Jun Kwon Department of Electrical Engineering and Computer Science DGISTDaegu 42988South Korea School of Electronic and Electrical Engineering Kyungpook National UniversityDaegu 41566South Korea School of Electronics Engineering Kyungpook National UniversityDaegu 41566South Korea Convergence Research Advanced Centre for Olfaction DGISTDaegu 42988South Korea

The enhanced carrier flow at the interface between Au and SnO_(2)semiconductors,which initially form Schottky contacts,is realized using chloride-based combustion ***-based combustion sys-tems can achieve chlorine(Cl)doping effects as well as conversion to crystalline SnO_(2)films at clearly lower temperatures(∼250℃)than conventional *** to the Cl doping effect,the high carrier concentration can induce thin potential barriers at the metal/semiconductor(MS)junctions,resulting in carrier injection by *** a result,compared to conventional SnO_(2)thin-film transistors,the de-vices fabricated by combustion synthesis exhibit significantly improved electrical performance with field-effect mobility of 6.52 cm 2/Vs(∼13 times),subthreshold swing of 0.74 V/dec,and on/offratio of∼10^(7)below 300℃.Furthermore,because of the enhanced tunneling carriers induced by the narrowed barrier width,the Schottky barriers are significantly reduced from 0.83 to 0.29 eV(65%decrease)at 250℃and from 0.42 to 0.17 eV(60%decrease)at 400℃.Therefore,chloride-based combustion synthesis can con-tribute to developing SnO_(2)-based electronics and flexible devices by achieving both high-quality oxide films and improved current flow at the MS interface with low-temperature annealing.

关键词： SnO_(2) Combustion Sol-gel Schottky contact thin-film transistors

A systematic study of light dependency of persistentphotoconductivity in a-InGaZnO thin-film transistors

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Chinese Physics B 2020年第11期29卷 508-515页

作者： Yalan Wang Mingxiang Wang Dongli Zhang Huaisheng Wang School of Electronic and Information Engineering Soochow UniversitySuzhou 215006China

Persistent photoconductivity(PPC)effect and its light-intensity dependence of both enhancement and depletion(E-/D-)mode amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs)are systematically *** of oxygen vacancy(V O)defects of E-mode TFTs is relatively small,in which formation of the photo-induced metastable defects is thermally activated,and the activation energy(E a)decreases continuously with increasing *** of V O defects of D-mode TFTs is much larger,in which the formation of photo-induced metastable defects is found to be spontaneous instead of thermally ***,for the first time it is found that a threshold dose of light-exposure is required to form fully developed photo-induced metastable *** low light-exposure below the threshold,only a low PPC barrier is formed and the PPC recovery is *** increasing the light-exposure to the threshold,the lattice relaxation of metal cations adjacent to the doubly ionized oxygen vacancies(V O^2+)is fully developed,and the PPC barrier increases to∼0.25 eV,which remains basically unchanged under higher *** on the density of V O defects in the channel and the condition of light illumination,a unified model of formation of photo-induced metastable defects in a-IGZO TFTs is proposed to explain the experimental observations.

关键词： amorphous indium-gallium-zinc oxide thin-film transistors persistent photoconductivity lightintensity

Degradation and its fast recovery in a-IGZO thin-film transistors under negative gate bias stress

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Chinese Physics B 2021年第11期30卷 610-617页

作者： Jianing Guo Dongli Zhang Mingxiang Wang Huaisheng Wang School of Electronic and Information Engineering Soochow UniversitySuzhou 215006China

A new type of degradation phenomena featured with increased subthreshold swing and threshold voltage after negative gate bias stress(NBS)is observed for amorphous InGaZnO(a-IGZO)thin-film transistors(TFTs),which can recover in a short *** comparing with the degradation phenomena under negative bias illumination stress(NBIS),positive bias stress(PBS),and positive bias illumination stress(PBIS),degradation mechanisms under NBS is proposed to be the generation of singly charged oxygen vacancies(V_(o)^(+))in addition to the commonly reported doubly charged oxygen vacancies(V_(o)^(2+)).Furthermore,the NBS degradation phenomena can only be observed when the transfer curves after NBS are measured from the negative gate bias to the positive gate bias direction due to the fast recovery of V_(o)^(+)under positive gate *** proposed degradation mechanisms are verified by TCAD simulation.

关键词： amorphous IGZO thin-film transistors negative bias stress subthreshold swing

Fully Printed High‑Performance n‑Type Metal Oxide thin‑film transistors Utilizing Coffee‑Ring Effect

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Nano-Micro Letters 2021年第11期13卷 68-78页

作者： Kun Liang Dingwei Li Huihui Ren Momo Zhao Hong Wang Mengfan Ding Guangwei Xu Xiaolong Zhao Shibing Long Siyuan Zhu Pei Sheng Wenbin Li Xiao Lin Bowen Zhu Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of EngineeringWestlake UniversityHangzhou 310024China Zhejiang University Hangzhou 310027China Key Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXian 710071China School of Microelectronics University of Science and Technology of ChinaHefei 230026China Instrumentation and Service Center for Physical Sciences Westlake UniversityHangzhou 310024China Institute of Advanced Technology Westlake Institute for Advanced StudyHangzhou 310024China School of Science Westlake UniversityHangzhou 310024China

Metal oxide thin-films transistors(TFTs)produced from solution-based printing techniques can lead to large-area electronics with low ***,the performance of current printed devices is inferior to those from vacuum-based methods due to poor film uniformity induced by the“coffeering”***,we report a novel approach to print highperformance indium tin oxide(ITO)-based TFTs and logic inverters by taking advantage of such notorious *** has high electrical conductivity and is generally used as an electrode ***,by reducing the film thickness down to nanometers scale,the carrier concentration of ITO can be effectively reduced to enable new applications as active channels in *** ultrathin(~10-nm-thick)ITO film in the center of the coffee-ring worked as semiconducting channels,while the thick ITO ridges(>18-nm-thick)served as the contact *** fully inkjet-printed ITO TFTs exhibited a high saturation mobility of 34.9 cm2 V^(−1) s^(−1) and a low subthreshold swing of 105 mV dec^(−1).In addition,the devices exhibited excellent electrical stability under positive bias illumination stress(PBIS,ΔV_(th)=0.31 V)and negative bias illuminaiton stress(NBIS,ΔV_(th)=−0.29 V)after 10,000 s voltage bias *** remarkably,fully printed n-type metal–oxide–semiconductor(NMOS)inverter based on ITO TFTs exhibited an extremely high gain of 181 at a low-supply voltage of 3 V,promising for advanced electronics applications.

关键词： Printed electronics Indium tin oxide thin-film transistors Coffee-ring effect NMOS inverters

Al_(2)O_(3)/HfO_(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible thin-film transistors

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Nano-Micro Letters 2022年第12期14卷 79-90页

作者： Qiuwei Shi Izzat Aziz Jin-Hao Ciou Jiangxin Wang Dace Gao Jiaqing Xiong Pooi See Lee School of Materials Science and Engineering Nanyang Technological University50 Nanyang AvenueSingapore 639798Singapore School of Chemistry and Materials Science Nanjing University of Information Science and TechnologyNanjing 210044People’s Republic of China

Flexible thin-film transistors(TFTs)have attracted wide interest in the development of flexible and wearable displays or ***,the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible ***,we develop a stable laminated Al_(2)O_(3)/HfO_(2) insulator by atomic layer deposition at a relatively lower temperature of 150℃.A sputtered amorphous indium-gallium-zinc oxide(IGZO)with the stoichiometry of In_(0.37)Ga_(0.20)Zn_(0.18)O_(0.25) is used as the active channel *** flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al_(2)O_(3)/HfO_(2) *** from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al_(2)O_(3),crystallized HfO_(2),and the aluminate Al-Hf-O phase,the as-prepared TFTs present the carrier mobilities of 9.7 cm^(2) V^(−1) s^(−1),ON/OFF ratio of-1.3×10^(6),subthreshold voltage of 0.1 V,saturated current up to 0.83 mA,and subthreshold swing of 0.256 V dec^(−1),signifying a high-performance flexible TFT,which simultaneously able to withstand the bending radius of 40 *** TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60-70%,a temperature of 25-30℃ *** yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%.

关键词： Nanolaminate dielectric Al_(2)O_(3)/HfO_(2) thin-film transistors Flexible electronic

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

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Chinese Physics B 2015年第7期24卷 463-467页

作者：钱慧敏于广陆海武辰飞汤兰凤周东任芳芳张荣郑有炓黄晓明 Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and EngineeringNanjing University Collaborative Innovation Center of Advanced Microstructures Nanjing University Peter Grnberg Research Center Nanjing University of Posts and Telecommunications

The time and temperature dependence of threshold voltage shift under positive-bias stress（PBS） and the following recovery process are investigated in amorphous indium-gallium-zinc-oxide（a-IGZO） thin-film transistors. It is found that the time dependence of threshold voltage shift can be well described by a stretched exponential equation in which the time constant τ is found to be temperature dependent. Based on Arrhenius plots, an average effective energy barrier Eτ stress= 0.72 eV for the PBS process and an average effective energy barrier Eτ recovery= 0.58 eV for the recovery process are extracted respectively. A charge trapping/detrapping model is used to explain the threshold voltage shift in both the PBS and the recovery process. The influence of gate bias stress on transistor performance is one of the most critical issues for practical device development.

关键词： amorphous indium gallium zinc oxide thin-film transistors positive bias stress trapping model interface states

Degradation mechanisms for a-InGaZnO thin-film transistors functioning under simultaneous DC gate and drain biases

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Chinese Physics B 2022年第8期31卷 651-655页

作者： Tianyuan Song Dongli Zhang Mingxiang Wang Qi Shan School of Electronic and Information Engineering Soochow UniversitySuzhou 215006China Visionox Technology Co. LtdSuzhou 215006China

Degradation of a-InGaZnO thin-film transistors working under simultaneous DC gate and drain bias stress is investigated,and the corresponding degradation mechanism is proposed and *** maximum degradation occurs under the bias stress condition that makes the electric field and electron concentration relatively high at the same *** of hot electrons in the etching-stop layer under the extended drain electrode is proven to be the underlying *** observed degradation phenomena,including distortion in the transfer curve on a logarithmic scale and two-slope dependence on gate bias on a linear scale,current crowding in the output curve,and smaller degradation in transfer curves measured under large drain bias,can all be well explained with the proposed degradation mechanism.

关键词： a-IGZO thin-film transistors hot-carrier effects

Improved Performance by a Double-Insulator Layer in Organic thin-film transistors

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Chinese Physics Letters 2006年第11期23卷 3108-3110页

作者：王伟石家纬郭树旭张宏梅全宝富马东阁 National Key Laboratory of Integrated Optoelectronics Jilin University Changchun 130012 State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun 130022 Graduate School of the Chinese Academy of Sciences Beijing 100049

Organic thin film transistors based on pentacene are fabricated by the method of full evaporation. The thickness of insulator film can be controlled accurately, which influences the device operation voltage markedly. Compared to the devices with a single-insulator layer, the electric performance of devices by using a double-insulator as the gate dielectric has good improvement. It is found that the gate leakage current can be reduced over one order of magnitude, and the on-state current can be enhanced over one order of magnitude. The devices with double-insulator layer exhibit field-effect mobility as large as 0.14cm^2/Vs and near the zero threshold voltage. The results demonstrate that using a proper double insulator as the gate dielectrics is an effective method to fabricate OTFTs with high electrical performance.

关键词： Improved Performance Double-Insulator thin-film transistors