Improved Performance by a Double-Insulator Layer in Organic Thin-Film Transistors

作     者：王伟 石家纬 郭树旭 张宏梅 全宝富 马东阁 

作者机构：National Key Laboratory of Integrated Optoelectronics Jilin University Changchun 130012 State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied Chemistry Chinese Academy of Sciences Changchun 130022 Graduate School of the Chinese Academy of Sciences Beijing 100049 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2006年第23卷第11期

页      面：3108-3110页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 070205[理学-凝聚态物理] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Supported by the National Natural Science Foundation of China under Grant No 60176022  and the Natural Science Foundation of Jilin Province under Grant No 20020634 

主　　题：Improved Performance Double-Insulator Thin-Film Transistors 

摘      要：Organic thin film transistors based on pentacene are fabricated by the method of full evaporation. The thickness of insulator film can be controlled accurately, which influences the device operation voltage markedly. Compared to the devices with a single-insulator layer, the electric performance of devices by using a double-insulator as the gate dielectric has good improvement. It is found that the gate leakage current can be reduced over one order of magnitude, and the on-state current can be enhanced over one order of magnitude. The devices with double-insulator layer exhibit field-effect mobility as large as 0.14cm^2/Vs and near the zero threshold voltage. The results demonstrate that using a proper double insulator as the gate dielectrics is an effective method to fabricate OTFTs with high electrical performance.