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Electrical Properties of Compositional Al₂O₃ Supplemented HfO₂ thin films by Atomic Layer Deposition

Materials Sciences and Applications 2022年第9期13卷 491-505页

作者： Yuxi Wang Yong Zhang Tingqu Wu Weizheng Fang Xufeng Kou Tao Wu Jangyong Kim School of Information Science and Technology ShanghaiTech University Shanghai China Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China University of the Chinese Academy of Sciences Beijing China ShanghaiTech Quantum Device Laboratory ShanghaiTech University Shanghai China

With advanced research for dielectrics including capacitors in DRAMs, decoupling filters in microcircuits and insulating gates in transistors, a lot of demand for the new challenging of high-k materials in semiconductor industries has been emerged. This study explores and addresses the experimental approach for composite materials with one of the major concerns of high capacitance, and low leakage, as well as ease of integration technology. The characteristics of Al2O3 supported HfO2 (AHO) thin films for a series of different Hf ratios with Al2O3 dielectrics by atomic layer deposition demonstrated as a candidate material. A composite AHO films with the homogeneous compositions of Al and Hf atoms into the Al-Hf-O mixed oxide system could stabilize the polycrystalline structure with increasing of dielectric constant (k) and decreasing of leakage current density, as well as a higher breakdown voltage than HfO2 film on its own. 70 nm thick AHO thin films with different composition of Al and Hf contents were prepared by atomic layer deposition technique on titanium nitride (TiN) and silicon dioxide (SiO2) coated Si substrates. Photolithography and metal lift-off technique were used for the device fabrication of the metal-insulator-metal (MIM) capacitor structures. AHO films on TiN/SiO2/Si were measured by semiconductor analyzer and source/ measure system with probe station in the voltage range from -5 to 5 V with a frequency range from 10 kHz to 1 MHz were used to conduct capacitance-voltage (C-V) measurements with low/medium frequency range and current-voltage (I-V) measurements. It was found that Au/AHO/TiN/SiO2/Si MIM capacitors demonstrate a capacitance density of 1.5 - 4.5 fF/μm2 at 10 kHz, a loss tangent of 0.02 - 0.04 at 10 kHz, dielectric constant of 11.7 - 35.5 depending on the composition and a low leakage current of 1.7 × 10-9 A/cm2

关键词： High-k Dielectrics Hafnium Oxide Aluminium Oxide Composites thin film capacitors Atomic Layer Deposition Microfabrication

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Experimental Characterization of ALD Grown Al<SUB>2</SUB>O<SUB>3</SUB>film for Microelectronic Applications

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Advances in Materials Physics and Chemistry 2021年第1期11卷 7-19页

作者： Yuxi Wang Yida Chen Yong Zhang Zhaoxin Zhu Tao Wu Xufeng Kou Pingping Ding Romain Corcolle Jangyong Kim School of Information Science and Technology ShanghaiTech University Shanghai China Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China University of the Chinese Academy of Sciences Beijing China Division of Engineering and Computer Science NYU Shanghai Shanghai China ShanghaiTech Quantum Device Laboratory ShanghaiTech University Shanghai China

The study of high dielectric materials has received great attention lately as a key passive component for the application of metal-insulator-metal (MIM) capacitors. In this paper, 50 nm thick Al2O3 thin films have been prepared by atomic layer deposition technique on indium tin oxide (ITO) pre-coated glass substrates and titanium nitride (TiN) coated Si substrates with typical MIM capacitor structure. Photolithography and metal lift-off technique were used for processing of the MIM capacitors. Semiconductor Analyzer with probe station was used to perform capacitance-voltage (C-V) characterization with low-medium frequency range. Current-voltage (I-V) characteristics of MIM capacitors were measured on precision source/measurement system. The performance of Al2O3 films of MIM capacitors on glass was examined in the voltage range from −5 to 5 V with a frequency range from 10 kHz to 5 MHz. Au/Al2O3/ITO/Glass MIM capacitors demonstrate a capacitance density of 1.6 fF/μm2at 100 kHz, a loss tangent ~0.005 at 100 kHz and a leakage current of 1.79 × 10&

关键词： Dielectrics High-k thin film capacitors Atomic Layer Deposition Microfabrication

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