Experimental Characterization of ALD Grown Al<SUB>2</SUB>O<SUB>3</SUB>Film for Microelectronic Applications
Experimental Characterization of ALD Grown Al<SUB>2</SUB>O<SUB>3</SUB>Film for Microelectronic Applications作者机构：School of Information Science and Technology ShanghaiTech University Shanghai China Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China University of the Chinese Academy of Sciences Beijing China Division of Engineering and Computer Science NYU Shanghai Shanghai China ShanghaiTech Quantum Device Laboratory ShanghaiTech University Shanghai China
出 版 物：《Advances in Materials Physics and Chemistry》 (材料物理与化学进展（英文）)
年 卷 期：2021年第11卷第1期
页 面：7-19页
学科分类：08[工学] 0822[工学-轻工技术与工程]
主 题：Dielectrics High-k Thin Film Capacitors Atomic Layer Deposition Microfabrication
摘 要：The study of high dielectric materials has received great attention lately as a key passive component for the application of metal-insulator-metal (MIM) capacitors. In this paper, 50 nm thick Al2O3 thin films have been prepared by atomic layer deposition technique on indium tin oxide (ITO) pre-coated glass substrates and titanium nitride (TiN) coated Si substrates with typical MIM capacitor structure. Photolithography and metal lift-off technique were used for processing of the MIM capacitors. Semiconductor Analyzer with probe station was used to perform capacitance-voltage (C-V) characterization with low-medium frequency range. Current-voltage (I-V) characteristics of MIM capacitors were measured on precision source/measurement system. The performance of Al2O3 films of MIM capacitors on glass was examined in the voltage range from −5 to 5 V with a frequency range from 10 kHz to 5 MHz. Au/Al2O3/ITO/Glass MIM capacitors demonstrate a capacitance density of 1.6 fF/μm2at 100 kHz, a loss tangent ~0.005 at 100 kHz and a leakage current of 1.79 × 10&
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