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Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In_(0.18)Al_(0.82)N/GaN heterostructures

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Chinese Physics B 2014年第3期23卷 493-497页

作者：林芳沈波卢励吾许福军刘新宇魏珂 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Institute of Microelectronics of Chinese Academy of Sciences

By using temperature-dependent current-voltage, variable-frequency capacitance-voltage, and Hall measurements, the effects of the thermal oxidation on the electrical properties of Ni/Au Schottky contacts on lattice-matched Ino.18Alo.82N/GaN heterostructures are investigated. Decrease of the reverse leakage current down to six orders of magni- tude is observed after the thermal oxidation of the Ino.18Alo.82N/GaN heterostructures at 700 ℃. It is confirmed that the reverse leakage current is dominated by the Frenkel-Poole emission, and the main origin of the leakage current is the emis- sion of electrons from a trap state near the metal/semiconductor interface into a continuum of electronic states associated with the conductive dislocations in the InxAll-xN barrier. It is believed that the thermal oxidation results in the formation of a thin oxide layer on the InxAll-xN surface, which increases the electron emission barrier height.

关键词： leakage current thermal oxidation Frenkel-Poole emission

Wrinkling and Growth Mechanism of CuO Nanowires in thermal oxidation of Copper Foil

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Chinese Journal of Chemical Physics 2013年第5期26卷 585-589,I0004页

作者： Fa-chun Lai Suan-zhi Lin Zhi-gao Chen Hai-long Hu Li-mei Lin College of Physics and EnerEy Fujian Normal University Fuzhou 350108 China Analytical and Testing Center Southwest University of Science and Technology Mianyang 621010China

We report a systematic study on wrinkling and CuO nanowires （NWs） growth in the thermal oxidation of copper foil. Copper foils with thickness of 0.5 mm were thermally oxidized in air at 500℃ for 0.5-10 h. It is found that all the samples have wrinkles and the size of the wrinkles increases with the oxidation time increasing. CuO NWs can grow on both the sidehill and hilltop of wrinkle. The CuO NWs on sidehill are longer and denser than those on hilltop. The growth direction of the CuO NWs on sidehill is not vertical to the substrate but vertical to their growth surfaces. The process of wrinkling and CuO NWs growth can be divided into three stages： undulating, voiding, and cracking. The CuO NWs on both sidehill and hilltop grow at the undulating stage. However, only the CuO NWs on sidehill grow and those on hilltop stop growing at the voiding and cracking stages because of the void in hilltop. The local electric field in a wrinkle at undulating stage was calculated, and it is found that the difference of local electric field strengths between hilltop and sidehill is small, which indicates that the predominant driving force for the diffusion of Cu ion during CuO NWs growth is internal stress.

关键词： CuO nanowire Wrinkling thermal oxidation Growth mechanism

Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al_2O_3 capped Ge

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Chinese Physics B 2014年第4期23卷 482-487页

作者：韩乐王盛凯张雄薛百清吴汪然赵毅刘洪刚 Advanced Photonics Center School of Electronic Science and Engineering Southeast University Microwave Device and IC Department Institute of Microelectronics Chinese Academy of Sciences School of Electronic Science and Engineering Nanjing University

We propose a modified thermal oxidation method in which an Al2O3 capping layer is used as an oxygen blocking layer （OBL） to form an ultrathin GeOx interracial layer, and obtain a superior Al2O3/GeOx/Ge gate stack. The GeOx interfacial layer is formed in oxidation reaction by oxygen passing through the Al2O3 OBL, in which theAl2O3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeOx interfacial layer would dramatically decrease as the thickness of Al2O3 OBL increases, which is beneficial to achieving an ultrathin GeOx interfacial layer to satisfy the demand for small equivalent oxide thickness （EOT）. In addition, the thickness of the GeOx interfacial layer has little influence on the passivation effect of the Al2O3/Ge interface. Ge （100） p-channel metal- oxide-semiconductor field-effect transistors （pMOSFETs） using the Al2O3/GeOx/Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off （Ionloft） ratio of above 1 104, a subthreshold slope of - 120 mV/dec, and a peak hole mobility of 265 cm2/V.s are achieved.

关键词： GeOx interfacial layer thermal oxidation GeO desorption Al2O3

Compositional and structural evolution of the titanium dioxide formation by thermal oxidation

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Chinese Physics B 2008年第8期17卷 3003-3007页

作者：苏卫锋 Gnaser Hubert 樊永良蒋最敏乐永康 Surface Physics Laboratory Department of Physics Fudan University Department of Physics University of Kaiserslautern IFOS University of Kaiserslautern D-67663 Kaiserslautern Germany

Titanium oxide films were prepared by annealing DC magnetron sputtered titanium films in an oxygen ambient. X-ray diffraction （XRD）, Auger electron spectroscopy （AES） sputter profiling, MCs^＋-mode secondary ion mass spectrometry （MCs^＋-SIMS） and atomic force microscopy （AFM） were employed, respectively, for the structural, com- positional and morphological characterization of the obtained films. For temperatures below 875 K, titanium films could not be fully oxidized within one hour. Above that temperature, the completely oxidized films were found to be rutile in structure. Detailed studies on the oxidation process at 925K were carried out for the understanding of the underlying mechanism of titanium dioxide （TiO2） formation by thermal oxidation. It was demonstrated that the formation of crystalline TiO2 could be divided into a short oxidation stage, followed by crystal forming stage. Relevance of this recognition was further discussed.

关键词： thermal oxidation titanium oxide compositional and structural evolution

MOS structure fabrication by thermal oxidation of multilayer metal thin films

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Journal of Semiconductors 2011年第3期32卷 135-139页

作者： Mohammad Orvatinia Atefeh Chahkoutahi Electron Engineering Department Information and Communication Technology(ICT) FacultyICT Ministry of Iran Bushehr Azad University

A novel approach for the fabrication of a metal oxide semiconductor（MOS） structure was *** process comprises electrochemical deposition of aluminum and zinc layers on a base of nickel-chromium alloy. This two-layer structure was thermally oxidized at 400℃for 40 min to produce thin layers of aluminum oxide as an insulator and zinc oxide as a semiconductor on a metallic *** deposition parameters,device dimensions and SEM micrographs of the layers,the device parameters were *** resultant MOS structure was characterized by a C-V curve *** this curve,the device maximum capacitance and threshold voltage were estimated to be about 0.74 nF and -2.9 V,respectively,which are in the order of model-based calculations.

关键词： MOS structure electrochemical deposition thermal oxidation C-V curve

Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium

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Science China(Technological Sciences) 2014年第12期57卷 2500-2503页

作者： YANG Qing ZHOU Xiao Hong NUKUI Takao SAEKI Yu IZUMI Sotaro TACKEUCHI Atsushi TATSUOKA Hirokazu LIANG Shu Hua Faculty of Material Science and Engineering Xi'an University of Technology Department of Applied Physics Waseda University Graduate School of Engineering Shizuoka University

The ZnO layer with thickness of 1.6 jim in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS sub- strate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton （D^0X） and donor-acceptor pair （DAP） emission peaks with large full-width at half-maximums （FWHMs） at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D^0X emission was stronger than that of the DAP emission at measuring temperatures of 10-300 K.

关键词： ZnO layer thermal oxidation gallium ultraviolet photoluminescence

One-step thermal oxidation synthesis of large-area Mn_(3)O_(4)nanoflakes at low temperature in air atmosphere

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Rare Metals 2020年第12期39卷 1469-1472页

作者： Ming-Long Zhong Bin Yang Cheng-Jun Guo Hai-Ping Huang Bai-Xiong Liu Hui-Ping Liu Engineering Research Institute Jiangxi University of Science and TechnologyGanzhou341000China

Single-crystalline Mn_(3)O_(4)nanoflakes were grown on manganese sheets by one-step thermal oxidation process at 360-500℃in ambient *** samples were characterized by scanning electron microscope(SEM),X-ray diffraction(XRD),Raman and transmission electron microscope(TEM).The nanoflakes with a size of 15-20 nm in thickness,~60 nm in width,and~210 nm in length are obtained at 360℃for 24 h.A surface diffusion mechanism is proposed to explain the growth of manganese oxide nanostructures via thermal oxidation,which includes two steps:manganese oxide(MnO/Mn_(3)O_(4))layers form firstly,and then Mn_(3)O_(4)nanostructures grow above the upper metal oxide layer to form multi-layered structures,MnO/Mn_(3)O_(4)/Mn_(3)O_(4)-*** nucleation and growth of Mn_(3)O_(4)nanostructures are related to the surface energy and different growth rates along different crystal directions,which are controlled by the diffusion of the metal and gas molecule.

关键词： Mn_(3)O_(4) Nanostructure thermal oxidation Growth mechanism

Effects of thermal oxidation on microwave-absorbing and mechanical properties of SiC_f/SiC composites with PyC interphase

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Transactions of Nonferrous Metals Society of China 2015年第5期25卷 1484-1489页

作者：史毅敏罗发丁冬海穆阳周万城朱冬梅西北工业大学凝固技术国家重点实验室西安710072 西安建筑科技大学材料与矿资学院西安710055

The SiCf/SiC composites containing PyC interphase were prepared by chemical vapor infiltration process. The influences of thermal oxidation on the complex permittivity and microwave absorption properties of Si Cf/Si C composites were investigated in the frequency range of 8.2-12.4 GHz. Both the real and imaginary parts of the complex permittivity decreased after thermal oxidation. The composites after 100 h thermal oxidation showed that reflection loss exceeded-10 d B in the frequency of 9.7-11.9 GHz and the minimum value was-11.4 d B at 11.0 GHz. The flexural strength of composites decreased but fracture behavior was improved obviously after thermal oxidation. These results indicate that the SiCf/SiC composites containing PyC interphase after thermal oxidation possess good microwave absorbing property and fracture behavior.

关键词： SiCf/SiC composites thermal oxidation dielectric properties microwave absorbing mechanical properties

The improvement of corrosion resistance of TA18 after thermal oxidation

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The improvement of corrosion resistance of TA18 after therma...