Thermal Oxidation of Silicon Carbide Substrates
Thermal Oxidation of Silicon Carbide Substrates作者机构：State Key Laboratory of Crystal Materials Shandong University Jinan 250100 China
出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)
年 卷 期：2009年第25卷第1期
页 面：115-118页
核心收录：
基 金：supported by the National Natural Sci-ence Foundation of China (No. 50721002) Program for New Century Excellent Talents in University
主 题：SiC Thermal oxidation GaN epitaxy
摘 要：Thermal oxidation was used to remove the subsurface damage of silicon carbide （SIC） surfaces. The anisotropy of oxidation and the composition of oxide layers on Si and C faces were analyzed. Regular pits were observed on the surface after the removal of the oxide layers, which were detrimental to the growth of high quality epitaxial layers. The thickness and composition of the oxide layers were characterized by Rutherford backscattering spectrometry （RBS） and X-ray photoelectron spectroscopy （XPS）, respectively. Epitaxial growth was performed in a metal organic chemical vapor deposition （MOCVD） system. The substrate surface morphology after removing the oxide layer and gallium nitride （GaN） epilayer surface were observed by atomic force microscopy （AFM）. The results showed that the GaN epilayer grown on the oxidized substrates was superior to that on the unoxidized substrates.
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