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A two-field-scan harmonic Hall voltage analysis for fast,accurate quantification of spin-orbit torques in magnetic heterostructures

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Science China(Physics,Mechanics & Astronomy) 2024年第10期67卷 105-112页

作者： Xin Lin Lijun Zhu State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049China

We report on the development of a“two-field-scan”harmonic Hall voltage(HHV)analysis,which collects the second HHVas a function of a swept in-plane magnetic field at 45°and 0°relative to the excitation current,for the determination of the spin-orbit torques of transverse spins in magnetic heterostructures without significant perpendicular spins,longitudinal spins,and longitudinal/perpendicular Oersted *** demonstrate that this two-field-scan analysis is as accurate as the well-established but time-consuming angle-scan HHV analysis even in the presence of considerable thermoelectric effects but takes more than a factor of 7 less measurement *** also show that the fit of the HHV data from a single field scan at 0°,which is commonly employed in the literature,is not reliable because the employment of too many free parameters in the fitting of the very slowly varying HHV signal allows erroneous conclusion about the spin-orbit torque efficiencies.

关键词： spin-orbit torque spin current spin-orbit coupling spintronics

Two-dimensional magnetic materials for spintronic applications

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Nano Research 2024年第2期17卷 743-762页

作者： Shivam N.Kajale Jad Hanna Kyuho Jang Deblina Sarkar MIT Media Lab Massachusetts Institute of TechnologyCambridgeMA 02139USA Department of Information Technology and Electrical Engineering ETH ZürichZürich8092Switzerland

spintronic devices are driving new paradigms of bio-inspired,energy efficient computation like neuromorphic stochastic computing and in-memory *** have also emerged as key candidates for non-volatile memories for embedded systems as well as alternatives to persistent *** meet the growing demands from such diverse applications,there is need for innovation in materials and device designs which can be scaled and adapted according to the ***-dimensional(2D)magnetic materials address challenges facing bulk magnet systems by offering scalability while maintaining device integrity and allowing efficient control of *** this review,we highlight the progress made in experimental studies on 2D magnetic materials towards their integration into spintronic *** provide an account of the various relevant material discoveries,demonstrations of current and voltage-based control of magnetism and reported device systems,while also discussing the challenges and opportunities towards integration of 2D magnetic materials in commercial spintronic devices.

关键词： spintronics van der Waals magnetic tunnel junction(MTJ) spin-orbit torque magnetism

Switching plasticity in compensated ferrimagnetic multilayers for neuromorphic computing

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Chinese Physics B 2022年第11期31卷 143-148页

作者： Weihao Li Xiukai Lan Xionghua Liu Enze Zhang Yongcheng Deng Kaiyou Wang State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049 China Beijing Academy of Quantum Information Sciences Beijing 100083 China Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100049 China

Current-induced multilevel magnetization switching in ferrimagnetic spintronic devices is highly pursued for the application in neuromorphic *** this work,we demonstrate the switching plasticity in Co/Gd ferrimagnetic multilayers where the binary states magnetization switching induced by spin–orbit toque can be tuned into a multistate one as decreasing the domain nucleation ***,the switching plasticity can be tuned by the perpendicular magnetic anisotropy of the multilayers and the in-plane magnetic ***,we used the switching plasticity of Co/Gd multilayers for demonstrating spike timing-dependent plasticity and sigmoid-like activation *** work gives useful guidance to design multilevel spintronic devices which could be applied in high-performance neuromorphic computing.

关键词： switching plasticity compensated ferrimagnet spin-orbit torque spike timing-dependent plasticity sigmoidal neuron handwritten digits recognition neuromorphic computing

Oscillation of current-induced interfacial spins reorientation in a like-synthetic antiferromagnet/antiferromagnet system

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Science China(Physics,Mechanics & Astronomy) 2021年第6期64卷 106-113页

作者： XiongHua Liu YongCheng Deng XiuKai Lan RunZe Li KaiYou Wang State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing Academy of Quantum Information Sciences Beijing 100193China Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100049China

Antiferromagnets have been attracting tremendous interest in the spintronics community due to their intrinsic appealing properties,such as zero stray field and ultrafast spin ***,the electrical manipulation of bulk properties of antiferromagnets has been widely studied,but exploring the use of antiferromagnetic(AFM)interfacial properties to investigate some key issues in spintronic devices is urgently *** this study,the magnetic and spin transport properties mediated by interlayer exchange coupling(IEC)are examined through spin-orbit torque(SOT)-induced tunability of interfacial spins in heavy-metal/like-synthetic antiferromagnet/antiferromagnet heterostructure *** found that the exchange bias and coercivity and the critical current density for SOT switching can be modulated by IEC,associating with the oscillation of SOTinduced interfacial spins reorientation at zero field,which can be well understood with the modified Ruderman-Kittel-KasuyaYosida *** finding opens a new route for understanding and using the AFM interfacial spins in spintronics.

关键词： spintronics antiferromagnetic interfacial spins spin-orbit torque oscillation

Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications

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Journal of Semiconductors 2023年第12期44卷 81-88页

作者： Chuanpeng Jiang Jinhao Li Hongchao Zhang Shiyang Lu Pengbin Li Chao Wang Zhongkui Zhang Zhengyi Hou Xu Liu Jiagao Feng He Zhang Hui Jin Gefei Wang Hongxi Liu Kaihua Cao Zhaohao Wang Weisheng Zhao School of Integrated Circuit Science and Engineering Beihang UniversityBeijing 100191China Truth Memory Corporation Beijing 100088China

We have successfully demonstrated a 1 Kb spin-orbit torque(SOT)magnetic random-access memory(MRAM)multiplexer(MUX)array with remarkable *** 1 Kb MUX array exhibits an in-die function yield of over 99.6%.Additionally,it provides a sufficient readout window,with a TMR/RP_sigma%value of ***,the SOT magnetic tunnel junctions(MTJs)in the array show write error rates as low as 10^(-6)without any ballooning effects or back-hopping behaviors,ensuring the write stability and *** array achieves write operations in 20 ns and 1.2 V for an industrial-level temperature range from-40 to 125℃.Overall,the demonstrated array shows competitive specifications compared to the state-of-the-art *** work paves the way for the industrial-scale production of SOT-MRAM,moving this technology beyond R&D and towards widespread adoption.

关键词： spin-orbit torque MRAM multiplexer array 200 mm-wafer platform stability reliability

Reconfigurable physical unclonable cryptographic primitives based on current-induced nanomagnets switching

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Science China(Information Sciences) 2022年第2期65卷 188-196页

作者： Shuai ZHANG Jian ZHANG Shihao LI Yaoyuan WANG Zhenjiang CHEN Jeongmin HONG Long YOU Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information Huazhong University of Science and Technology

Hardware security primitives that preserve secrets are playing a crucial role in the Internet-ofThings(Io T) era. Existing physical unclonable function(PUF) instantiations, exploiting static randomness,generate challenge-response pairings(CRPs) to produce unique security keys that can be used to authenticate devices linked to the Io T. Reconfigurable PUFs(RPUFs) with dynamically refreshable CRPs can enhance the security and robustness of conventional PUFs. The in-plane current-driven perpendicular polarized nanomagnet switching via spin-orbit torque(SOT) possesses great potential for application to memory and logic, as the write-current path is separate from the read-current path, which naturally resolves the write-read interference. However, the stochastic switching of perpendicular magnetization, without an additional symmetry-breaking field, would significantly hinder the technological viability of commercial implementations. Here, we report an initialization-free physical RPUF implemented by SOT-induced stochastic switching of perpendicularly magnetized Ta/Co Fe B/Mg O nanodevices. Using a 15×15 nanomagnet array, we experimentally demonstrate a security primitive that offers a near-ideal 50% uniqueness over 100 reconfiguration cycles, as well as a low correlation coefficient between every two reconfiguration cycles. Our results show that current-induced nanomagnets switching paves the way for developing highly reliable and energy-efficient reconfigurable cryptographic primitives with a smaller footprint.

关键词： reconfigurable physical unclonable function spin-orbit torque cryptographic primitive spintronics nanomagnet

Antiferromagnetic spintronics: An overview and outlook

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Fundamental Research 2022年第4期2卷 522-534页

作者： Danrong Xionga Yuhao Jiang Kewen Shi Ao Du Yuxuan Yao Zongxia Guo Daoqian Zhu Kaihua Cao Shouzhong Peng Wenlong Cai Dapeng Zhu Weisheng Zhao Fert Bejing Institute MIT Key Laboratory of SpintronicsSchool of Integated Circuit Science and EngineeringBeihang UniversityBejing 10191China Beihang-Goertek Joint Microelectronics Institute Qingdao Research InstituteBeihang UniversityQingdao 266ooChina

Over the pas few decades,the diversified development of antiferomagnetic spintronics has made antiferomagnets(AFMs)interesting and very *** tough challenges,the applications of AFMs in electronic devices have transitioned from focusing on the interface coupling features to achieving the manipulation and detection of *** AFMs are internally magnetic,taking full use of AFMs for information storage has been the main target of *** this paper,we provide a comprehensive description of AFM spintronics applications from the interface coupling,read-out operations,and writing manipulations *** examine the early use of AFMs in magnetic recordings and conventional magnetoresistive random-access memory(MRAM),and review the latest mechanisms of the manipulation and detection of ***,based on exchange bias(EB)manipulation,a high-performance EB-MRAM is introduced as the next generation of AFM-based memories,which provides an effective method for read-out and writing of AFMs and opens a new era for AFM spintronics.

关键词： Antiferromagnets MRAM spintronics spin-orbit torque Exchange bias

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利用轨道转移力矩实现室温范德华磁存储

Science Bulletin 2023年第22期68卷 2743-2749,M0005页

作者：潘振存李栋叶兴国陈正陈朝晖王安琦田明亮姚光杰刘开辉廖志敏 State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics School of PhysicsPeking UniversityBeijing 100871China Academy for Advanced Interdisciplinary Studies Peking UniversityBeijing 100871China Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions High Magnetic Field LaboratoryHefei Institutes of Physical ScienceChinese Academy of SciencesHefei 230031China School of Physics and Optoelectronic Engineering Anhui UniversityHefei 230601China Collaborative Innovation Center of Advanced Microstructures Nanjing UniversityNanjing 210093China Hefei National Laboratory Hefei 230088China

具有非易失性的磁阻式随机存取存储器(MRAM)促进了诸如存内计算、神经形态计算和随机计算等在内的新兴应用.二维范德华异质结具有原子级平滑的界面和高度可调的物理性质,为MRAM的发展提供了新的技术路线.本文报道了基于WTe_2/Fe_(3)GaTe... 详细信息

具有非易失性的磁阻式随机存取存储器(MRAM)促进了诸如存内计算、神经形态计算和随机计算等在内的新兴应用.二维范德华异质结具有原子级平滑的界面和高度可调的物理性质,为MRAM的发展提供了新的技术路线.本文报道了基于WTe_2/Fe_(3)GaTe_(2)/BN/Fe_(3)GaTe_(2)异质结构的全二维范德华磁存储器件,实现了室温下数据读取和写入的全电学调控.其数据读取基于由Fe_(3)GaTe_(2)/BN/Fe_(3)GaTe_(2)构筑的磁隧道结,而数据写入是通过WTe_(2)中电流诱导的轨道磁矩极化来实现的.该磁矩对近邻的磁性层Fe_(3)GaTe_(2)施加力矩作用,称为轨道转移力矩(OTT)效应.与传统的自旋转移力矩和自旋轨道力矩相比,OTT效应充分利用了WTe_2中面外取向的轨道磁矩,通过施加界面电流实现无外磁场辅助的垂直磁化翻转.该研究结果表明,基于轨道转移力矩的OTT-MRAM极有希望作为低功耗、高性能的存储器件应用.

关键词： Magnetoresistive memory orbit-transfer torque spin-orbit torque Magnetization switching Magnetic tunnel junction 2D magnetic materials