Demonstration of a manufacturable SOT-MRAM multiplexer array towards industrial applications

作     者：Chuanpeng Jiang Jinhao Li Hongchao Zhang Shiyang Lu Pengbin Li Chao Wang Zhongkui Zhang Zhengyi Hou Xu Liu Jiagao Feng He Zhang Hui Jin Gefei Wang Hongxi Liu Kaihua Cao Zhaohao Wang Weisheng Zhao Chuanpeng Jiang;Jinhao Li;Hongchao Zhang;Shiyang Lu;Pengbin Li;Chao Wang;Zhongkui Zhang;Zhengyi Hou;Xu Liu;Jiagao Feng;He Zhang;Hui Jin;Gefei Wang;Hongxi Liu;Kaihua Cao;Zhaohao Wang;Weisheng Zhao

作者机构：School of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191China Truth Memory CorporationBeijing 100088China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2023年第44卷第12期

页      面：81-88页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by the National Key Research and Development Program of China (Nos.2021YFB3601303,2021YFB3601304,2021YFB3601300,2022YFB4400200,2022YFB4400201,2022YFB4400203) the National Natural Science Foundation of China (Grant No.62171013) 

主　　题：spin-orbit torque MRAM multiplexer array 200 mm-wafer platform stability reliability 

摘      要：We have successfully demonstrated a 1 Kb spin-orbit torque(SOT)magnetic random-access memory(MRAM)multiplexer(MUX)array with remarkable *** 1 Kb MUX array exhibits an in-die function yield of over 99.6%.Additionally,it provides a sufficient readout window,with a TMR/RP_sigma%value of ***,the SOT magnetic tunnel junctions(MTJs)in the array show write error rates as low as 10^(-6)without any ballooning effects or back-hopping behaviors,ensuring the write stability and *** array achieves write operations in 20 ns and 1.2 V for an industrial-level temperature range from-40 to 125℃.Overall,the demonstrated array shows competitive specifications compared to the state-of-the-art *** work paves the way for the industrial-scale production of SOT-MRAM,moving this technology beyond R&D and towards widespread adoption.