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Chinese Physics B 2014年第11期23卷 661-665页

作者：沈泽南夏洋刘邦武刘金虎李超波李勇滔 Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.

关键词： solar cells plasma immersion ion implantation conformal doping black silicon

In Situ Controllable Growth of Cu_2SnS_3 Film as Low-Cost Counter Electrodes for Dye-Sensitized solar cells

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Acta Metallurgica Sinica(English Letters) 2015年第5期28卷 580-583页

作者： Wei Xu Xin Jiang Jian-Min Chen Rui-Qin Tan Wei-Jie Song Ningbo Institute of Material Technology and Engineering Chinese Academy of Sciences Ningbo Key Laboratory of Silicon and Organic Thin Film Optoelectronic Technologies State Key Laboratory of Solid Lubrication Lanzhou Institute of Chemical Physics Chinese Academy of Sciences Faculty of Information Science and Engineering Ningbo University

Morphology-controllable Cu2SnS3 thin films on solvothermal process and used in dye-sensitized solar cells as Mo-glass were prepared via a facile in situ one-step counter electrodes. The effects of different solvents on the morphology of films were investigated. DSC based on the porous net-like Cu2SnS3 thin film as counter electrodes showed a power conversion efficiency of 2.30%, which was improved to 3.35% after annealing.

关键词： Cu2SnS3 Thin films Counter electrodes solar cells Power conversion efficiency

Preparation and characterization of Cd_(1-x)Zn_xS buffer layers for thin film solar cells

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Rare Metals 2013年第1期32卷 47-51页

作者： Tian-Wei Zhang Cheng-Jun Zhu Chao-Zheng Wang Jian Li Key Laboratory of Semiconductor Photovoltaic Technology of Inner Mongolia Autonomous Region School of Physical Science and Technology Inner Mongolia University

Cd1_xZnxS （x = 0, 0.1, 0.2, 0.3, 1.0） thin films have been grown successfully on soda-lime glass substrates by chemical bath deposition technique as a very promising buffer layer material for optoelectronic device applications. The composition, structural properties, surface morphol- ogy, and optical properties of Cd~_xZnxS thin films were characterized by energy dispersive analysis of X-ray tech- nique （EDAX）, X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and UV-Vis spectrophotometer tech- niques, respectively. The annealed films were observed to possess the deficient sulfur composition. The results of XRD show that the Cdl_xZnxS （x = 0. l） thin film annealed at 450 ~C forms hexagonal （wurtzite） structure with lattice parameters a = 0.408814 nm, c ： 0.666059 nm, and its average grain size is 24.9902 nm. The diffraction peaks become strong with the increasing annealing temperatures. The surface of Cdl_~ZnxS （x = 0.1） thin film annealed at 450 ~C is uninterrupted and homogenous as compared to other temperatures. From optical properties, it is observed that the presence of small amount of Zn results in marked changes in the optical band gap of CdS. The band gaps of the Cdl_xZnxS thin films vary from 2.42 to 3.51 eV as composition varies from x = 0.0 to 1.0.

关键词： solar cells Buffer layers ChemicalCdl_xZnxS thin films bath deposition

Influence of Different Surface Modifications on the Photovoltaic Performance and Dark Current of Dye-Sensitized solar cells

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Plasma Science and Technology 2007年第5期9卷 556-559页

作者：徐炜炜戴松元胡林华张昌能肖尚峰罗向东景为平王孔嘉 Division of solar Energy Materials and Engineering Institute of Plasma PhysicsChinese Academy of SciencesHefei 230031China Jiangsu Provincial Key Lab of ASIC DesignNantong UniversityNantong 226007China Division of solar Energy Materials and Engineering Institute of Plasma PhysicsChinese Academy of SciencesHefei 230031China Jiangsu Provincial Key Lab of ASIC Design Nantong UniversityNantong 226007China

The TiO2 nanoporous film photoelectrode, as a crucial component of dye-sensitized solar cells, has been investigated. The photovoltaic properties and the dark current were studied by two surface modification methods. One was to apply a compact layer between the conductive glass substrate and nanoporous TiO2 film. Another was to produce TiO2 nanoparticles among the microstructure by TICl4 treatment. A suitable concentration and number of times for TICl4 treatment were found in our experiment. The dark current is suppressed by surface modifications, leading to a significant improvement in the solar cells performance. An excessive concentration of TICl4 will produce more surface states and introduce a larger dark current reversely. The dye is also regarded as a source of charge recombination in dark to some extent, due to an amount of surface protonations introduced by the interracial link in the conductive glass substrate/dye interface and dye/TiO2 interface.

关键词： surface modification, dark current, dye-sensitized solar cells

An InGaAs graded buffer layer in solar cells

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Journal of Semiconductors 2014年第1期35卷 74-77页

作者：屈晓声包鸿音哈尼熊丽玲甄红欣 Institute of Electronic Information Engineering Beihang University

This paper uses an InGaAs graded buffer layer to solve the problem of lattice mismatch and device performance degradation. In the graded buffer layer, we choose the ＂transition layer＂ and the ＂cover layer＂ to accommodate the 3.9% mismatch. No threading dislocations were observed in the uppermost part of the epitaxial layer stack when using a transmission electron microscope （TEM）. We analyze the factors which influence the saturation current. Simulation data shows that the cells grown by metal organic vapor phase epitaxy （MOVPE） have considerable open circuit voltage, short circuit current, and photoelectric conversion efficiency. Finally we propose that InP may have great development potential as a substrate material.

关键词： solar cells lattice mismatch graded buffer layer threading dislocation carrier lifetime

Preparation of CH_3NH_3PbI_3 thin films for solar cells via Vapor Transfer Method

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Journal of Energy Chemistry 2018年第5期27卷 1386-1389页

作者： Kejie Feng Yitong Liu Yuancheng Zhang Yujie Liu Xiaoliang Mo Department of Materials Science Fudan University Shanghai 200433 China Shanghai solar Energy Research Center Shanghai 201100 China

Organometal halide perovskite based solar cells have emerged as one of the most promising candidates for low-cost and high-efficiency solar cell technologies. Here a Vapor Transfer Method （VTM） is used to fabricate high quality perovskite thin films in a balanced vacuum capsule. By adjusting the reaction tem- perature, CH_3NHl_3 saturated vapor which then reacts with Pbl_2 films can be controlled and the formation process of CH_3NH_3Pbl_3 perovskite films can be further influenced. Prepared perovskite films which ex- hibit pure phase, smooth surface and high crystallinity are assembled into planar heterojunction inverted solar cells. The whole fabrication process of solar cell devices is organic solution free. Finally, the cham- pion cell achieved power conversion efficiency （PCE） of 13.08% with negligible current-voltage hysteresis under fully open-air conditions. The photovoltaic performance could be further enhanced by optimizing perovskite composition and the device structure.

关键词： Vapor Transfer Method Organometal halide perovskite Planar heterojunction Inverted architecture solar cells

Precisely tuning Ge substitution for efficient solution-processed Cu_2ZnSn(S,Se)_4 solar cells

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Chinese Physics B 2018年第1期27卷 116-120页

作者：王新收寇东星周文辉周正基田庆文孟月娜武四新 The Key Laboratory for Special Functional Materials of MOE Collaborative Innovation Center of Nano Functional Materials and ApplicationsHenan University

The kesterite Cu2ZnSn（S,Se）4 （CZTSSe） solar cells have yielded a prospective conversion efficiency among all thin- film photovoltaic technology. However, its further development is still hindered by the lower open-circuit voltage （Voc）, and the non-ideal bandgap of the absorber is an important factor affecting this issue. The substitution of Sn with Ge provides a unique ability to engineer the bandgap of the absorber film. Herein, a simple precursor solution approach was successfully developed to fabricate Cu2Zn（SnyGel_y）（SxSe~ x）4 （CZTGSSe） solar cells. By precisely adjusting the Ge content in a small range, the Voc and Jsc are enhanced simultaneously. Benefitting from the optimized bandgap and the maintained spike structure and light absorption, the 10% Ge/（Ge＋Sn） content device with a bandgap of approximately 1.1 eV yields the highest efficiency of 9.36%. This further indicates that a precisely controlled Ge content could further improve the cell performance for efficient CZTGSSe solar cells.

关键词： Cu2ZnSn（S,Se）4 solar cells Ge substitution bandgap

Atomic layer deposition enabling higher efficiency solar cells:A review

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Nano Materials Science 2020年第3期2卷 204-226页

作者： MdAnower Hossain Kean Thong Khoo Xin Cui Geedhika K Poduval Tian Zhang Xiang Li Wei Min Li Bram Hoex School of Photovoltaic and Renewable Energy Engineering University of New South WalesNSW2052Australia Jiangsu Leadmicro Nano-Equipment Technology Ltd. WuxiJiangsu214028PR China

Atomic layer deposition(ALD)can synthesise materials with atomic-scale precision.The ability to tune the material composition,film thickness with excellent conformality,allow low-temperature processing,and in-situ real-time monitoring makes this technique very appealing for a wide range of applications.In this review,we focus on the application of ALD layers in a wide range of solar cells.We focus on industrial silicon,thin film,organic and quantum dot solar cells.It is shown that the merits of ALD have already been exploited in a wide range of solar cells at the lab scale and that ALD is already applied in high-volume manufacturing of silicon solar cells.

关键词： Atomic layer deposition Transition metal oxides solar cells Contact resistivity Surface passivation Carrier selectivity

Modeling and implementation of tandem polymer solar cells using wide-bandgap front cells

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Carbon Energy 2020年第1期2卷 131-142页

作者： Seo-Jin Ko Hyosung Choi Quoc Viet Hoang Chang Eun Song Pierre-Olivier Morin Jungwoo Heo Mario Leclerc Sung Cheol Yoon Han Young Woo Won Suk Shin Bright Walker Jin Young Kim Division of Advanced Materials Korea Research Institute of Chemical Technology(KRICT)DaejeonSouth Korea Department of Chemistry and Research Institute for Natural Sciences Hanyang UniversitySeoulSouth Korea Vietnam Certification Centre Directorate for StandardsMetrology and Quality(STAMEQ)HanoiVietnam Department of Chemistry Laval UniversityQuebec CityCanada Department of Energy Engineering Ulsan National Institute of Science and Technology(UNIST)UlsanSouth Korea Department of Chemistry Korea UniversitySeoulSouth Korea Department of Chemistry Kyung Hee UniversitySeoulSouth Korea

Tandem device architectures offer a route to greatly increase the maximum possible power conversion efficiencies(PCEs)of polymer solar cells,however,the complexity of tandem cell device fabrication(such as selecting bandgaps of the front and back cells,current matching,thickness,and recombination layer optimization)often result in lower PCEs than are observed in single-junction devices.In this study,we analyze the influence of front cell and back cell bandgaps and use transfer matrix modeling to rationally design and optimize effective tandem solar cell structures before actual device fabrication.Our approach allows us to estimate tandem device parameters based on known absorption coefficients and open-circuit voltages of different active layer materials and design devices without wasting valuable time and materials.Using this approach,we have investigated a series of wide bandgap,high voltage photovoltaic polymers as front cells in tandem devices with PTB7-Th as a back cell.In this way,we have been able to demonstrate tandem devices with PCE of up to 12.8%with minimal consumption of valuable photoactive materials in tandem device optimization.This value represents one of the highest PCE values to date for fullerene-based tandem solar cells.

关键词： polymer solar cells solar cells tandem solar cells

Quantification of Silicon (SI) and Silicon Dioxide (SiO₂) from the Nafud Desert-Al-Qassim Region, Kingdom of Saudi Arabia Using XRD Analysis

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Advances in Materials Physics and Chemistry 2024年第5期14卷 67-75页

作者： Nagwa Ibrahim Mohamed Department of Physics College of Science Qassim University Buraydah Saudi Arabia

This research was conducted in the Qassim region, Kingdom of Saudi Arabia. The goal of this research is to determine the percentage of silicon in the Rub al-Khali desert. Samples were collected from four cities located in the Al-Qassim Region of Saudi Arabia (Uyun Al-Jawa, Al-Fuwailiq, Al-Sulaibiya, and Al-Qawara), from three distinct depths (the earth’s surface, 50 cm, and 100 cm). The percentages of silicon in these places vary between the highest value for silicon dioxide, which is 74.47 m/m%, and 34.8 m/m% for silicon in Al-Qawara city at a depth of 100 cm. We used an x-ray fluorescence (XRF) instrument to evaluate the samples. There are high percentage of both silica and silicon in the Nafud desert. Studies have shown that these ratios can help investors benefit from an element of Silicon and silicon dioxide, so the sands of the Nafud desert is sufficient for extracting Silicon and silica in huge quantities. This may transform the Kingdom into a leading country in the global computer technology industry that depends on silicon extracted from the desert sands, the most important of which are microcomputer data processing devices.

关键词： Silica Sand Dispersive X-Ray Fluorescence (EDXRF) Analyzer solar cells Nafud Desert Al-Qawwarh