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Slim Water Injection Nozzle for silicon wafer Wet Cleaning Bath

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Advances in Chemical Engineering and Science 2016年第4期6卷 345-354页

作者： Shogo Okuyama Kento Miyazaki Nobutaka Ono Hitoshi Habuka Akihiro Goto Department of Chemical and Energy Engineering Yokohama National University Yokohama Japan Shizuoka Factory Pre-Tech Co. Ltd. Yaizu Japan

In order to effectively and quickly clean the surface of semiconductor silicon wafers, the fluid flow is one of the significant issues. For a batch-type silicon wafer wet cleaning bath, a slim water injection nozzle consisting of a dual tube was studied, based on theoretical calculations and experiments. A thin inner tube was placed at the optimum position in the water injection nozzle. Such a simple design could make the water injection direction normal and the water velocity profile symmetrical along the nozzle. The water flow in the wet cleaning bath was observed using a blue-colored ink tracer. When the nozzle developed in this study was placed at the bottom of the bath, a fast and symmetrical upward water stream was formed between and around the wafers.

关键词： silicon wafer Wet Cleaning Bath Water Injection Nozzle Water Flow

STUDIES OF SURFACE GRINDING TEMPERATURE AFFECTED BY DIFFERENT GRINDING WAYS OF silicon wafer

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Transactions of Tianjin University 2000年第1期6卷 85-89页

作者：林彬于爱兵胡军徐燕申天津大学机械工程学院天津300072

The surface grinding temperature of the silicon wafer ground by diamond wheels is ***,the properties of the surface grinding temperature generated by two grinding methods,ground by straight and cup wheels respectively,are *** addition,considering the effects of grain size and grinding depth on surface grinding temperature during these two grinding processes,significant results and conclusions are obtained from experimental research.

关键词： surface grinding temperature straight wheel cup wheel silicon wafer

Effects of taping on grinding quality of silicon wafers in backgrinding

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Frontiers of Mechanical Engineering 2021年第3期16卷 559-569页

作者： Zhigang DONG Qian ZHANG Renke KANG Shang GAO Haijun LIU Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education Dalian University of TechnologyDalian 116024China CIMS Institute School of Mechanical EngineeringHefei University of TechnologyHefei 230009China

Taping is often used to protect patterned wafers and reduce fragmentation during backgrinding of silicon *** experiments using coarse and fine resinbond diamond grinding wheels were performed on silicon wafers with tapes of different thicknesses to investigate the effects of taping on peak-to-valley(PV),surface roughness,and subsurface damage of silicon wafers after *** showed that taping in backgrinding could provide effective protection for ground wafers from ***,the PV value,surface roughness,and subsurface damage of silicon wafers with taping deteriorated compared with those without taping although the deterioration extents were very *** PV value of silicon wafers with taping decreased with increasing mesh size of the grinding wheel and the final *** surface roughness and subsurface damage of silicon wafers with taping decreased with increasing mesh size of grinding wheel but was not affected by removal *** hope the experimental finding could help fully understand the role of taping in backgrinding.

关键词： taping silicon wafer backgrinding subsurface damage surface roughness

Surface Damage in Wire cut silicon wafers

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Rare Metals 1999年第4期18卷 315-318页

作者：樊瑞新阙端麟浙江大学硅材料科学国家重点实验室浙江杭州 310027 浙江大学硅材料科学国家重点实验室浙江杭州

The surface damage and the damage depth in wire-cut silicon wafers and inner-diameter (ID) cut silicon wafers were studied by means of thickness meter, scanning electron microscopy (SEM) and double crystal X-ray diffractometer. The results show that the surface of wire-cut silicon wafers is rougher than that of ID-cut silicon wafers and the surface damage in wire-cut silicon wafers is more serious than that in ID-cut silicon wafers, while the damage depth in wire-cut silicon wafers is smaller than that in ID-cut silicon wafers. The possible reasons for the generation of surface damage in wire-cut silicon wafers were also discussed.

关键词： wire-cut surface damage silicon wafer

Sensitivity analysis of the surface integrity of monocrystalline silicon to grinding speed with same grain depth-of-cut

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Advances in Manufacturing 2020年第1期8卷 97-106页

作者： Ping Zhou Zi-Guang Wang Ying Yan Ning Huang Ren-Ke Kang Dong-Ming Guo Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education.Dalian University of Technology Dalian 116024LiaoningPeople's Republic of China

Mechanisms for removal of materials during the grinding process of monocrystalline silicon have been extensively studied in the past several ***,debates over whether the cutting speed significantly affects the surface integrity are *** address this debate,this study comprehensively investigates the effects of cutting speed on surface roughness,subsurface damage,residual stress,and grinding force for a constant grain *** results illustrate that the changes in the surface roughness and subsurface damage relative to the grinding speed are less obvious when the material is removed in ductile-mode as opposed to in the brittle-ductile mixed mode.A notable finding is that there is no positive correlation between grinding force and surface *** results of this study could be useful for further investigations on fundamental and technical analysis of the precision grinding of brittle materials.

关键词： Rotational grinding silicon wafer Surface integrity Cutting speed Residual stress

Surface shape control of the workpiece in a double-spindle triple-workstation wafer grinder

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Journal of Semiconductors 2011年第10期32卷 78-85页

作者：朱祥龙康仁科董志刚冯光 Key Laboratory for Precision & Non-traditional Machining Technology of Ministry of Education Dalian University of Technology

Double-spindle triple-workstation（DSTW） ultra precision grinders are mainly used in production lines for manufacturing and back thinning large diameter（≥300 mm） silicon wafers for integrated *** is important, but insufficiently studied,to control the wafer shape ground on a DSTW grinder by adjusting the inclination angles of the spindles and work *** this paper,the requirements of the inclination angle adjustment of the grinding spindles and work tables in DSTW wafer grinders are analyzed.A reasonable configuration of the grinding spindles and work tables in DSTW wafer grinders are *** on the proposed configuration,an adjustment method of the inclination angle of grinding spindles and work tables for DSTW wafer grinders is put forward. The mathematical models of wafer shape with the adjustment amount of inclination angles for both fine and rough grinding spindles are *** proposed grinder configuration and adjustment method will provide helpful instruction for DSTW wafer grinder design.

关键词： grinder silicon wafer surface shape control chuck dressing modeling

Anomalous Emission And Carrier Effect of Fresh Porous silicon

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Chemical Research in Chinese Universities 2002年第3期18卷 270-273页

作者： ZOU Bing-suo WU Zhen yu CAO Li DAI Jian-hua XIE Si-shen WANG Jian ping Mostafa AEl-Sayed Optical Lab Institute of PhysicsChinese Academy of SciencesBeijing 100080P.R.China Laser Dynamics Laboratory School of Chemistry and BiochemistryGeorgia Institute of TechnologyAtlantaGA30332-0400

The emission and Fourier transformation infrared spectra of freshly prepared porous silicon(PS) and the silicon wafer were examined. Increasing temperature generally led to a decrease in the emission intensities of the PS samples, however, the freshly prepared sample showed an unusually large and sudden increase in its emission intensity at the specific temperature at which the hydrogen ion conductivity in the silicon wafer increased. The O-H vibrations of the silicon wafer also showed a sudden decrease at the same temperature. These results are consistent with the assumption that the luminescence of fresh PS comes from the carrier bound exciton in its confined nanostructure.

关键词： Porous silicon silicon wafer Carrier effect

Effect of catalyst on formation of poly(methyl methacrylate) brushes by surface initiated atom transfer radical polymerization

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Journal of Central South University 2014年第8期21卷 3049-3056页

作者：刘辉周晚珠叶红齐韩凯侯世川张欣悦 College of Chemistry and Chemical Engineering Central South University Key Laboratory of Resource Chemistry of Nonferrous Metals of Ministry of Education (Central South University) State Key Laboratory for Powder Metallurgy (Central South University)

Poly （methyl methacrylate）（PMMA） brushes were synthesized from silicon wafers via surface initiated atom transfer radical polymerization （SI-ATRP）. Energy disperse spectroscopy （EDS） and atomic force microscopy （AFM） confirmed that PMMA brushes were successfully prepared on the silicon wafers, and the surface became more hydrophobic according to the contact angle of 69~. It is found that CuCI/1, 1, 4, 7, 10, 10-hexamethyl triethylenetetramine （HMTETA） system is more suitable than CuBr/N, N, N′, N″, N′″-pentamethyl diethylenetriamine （PMDETA） system to control the free radical polymerization of MMA in solution. Nevertheless, better control on the thickness of PMMA brushes was achieved in CuBr/PMDETA than in CuC1/HMTETA due to higher activity and better reversibility of the former system.

关键词： poly (methyl methacrylate) atom transfer radical polymerization silicon wafer catalyst

Study into grinding force in back grinding of wafer with outer rim

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Advances in Manufacturing 2020年第3期8卷 361-368页

作者： Xiang-Long Zhu Yu Li Zhi-Gang Dong Ren-Ke Kang Shang Gao Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education Dalian University of TechnologyDalian116024People’s Republic of China

Back grinding of wafer with outer rim(BGWOR)is a new method for carrier-less thinning of silicon *** present,the effects of process parameters on the grinding force remain ***,a BGWOR normal grinding force model based on grain depth-of-cut was established,and the relationship between grinding parameters(wheel infeed rate,wheel rotational speed,and chuck rotational speed)and normal grinding force was ***,a series of experiments were performed to verify the BGWOR normal grinding force *** study proves that the BGWOR normal grinding force is related to the rotational direction of the wheel and chuck,and the effect of grinding mark density on the BGWOR normal grinding force cannot be ***,this study provides methods for reducing the grinding force and optimizing the back thinning process of the silicon wafer.

关键词： silicon wafer Back grinding of wafer with outer rim(BGWOR) Grinding force Grinding mark density