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Intense Yellow Photoluminescence from silicon oxynitride Films Prepared by Dual Ion Beam Sputtering

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Plasma Science and Technology 2004年第2期6卷 2237-2240页

作者：成珏飞吴雪梅诸葛兰剑 Department of Physics Suzhou University Suzhou 215006 China

In this work, results on the study of the structure and photoluminescence (PL) properties of SiOxNy thin films are presented. The films were deposited at room temperature using a dual-ion-beam co-sputtering system. The XRD and TEM results show that the deposited films have an amorphous structure. In the XPS result, we find N 1s spectra consist of one symmetric single peak at 397.8 eV, indicating that the nitrogen atoms are mainly bonded to silicon. It is in agreement to the result of FTIR. In SiOxNy films, an intense single PL peak at 590 nm is observed. Furthermore, with the increase of the N content in the SiOxNy films, the intensity of the PL peak at 590 nm increases a lot. The PL peak of 590 nm is suggested to originate from N-related defects.

关键词： silicon oxynitride photoluminescence(PL) dual ion beam deposition(DIBD)

Synthesis and Characterization of Mesoporous silicon oxynitride MCM-41 with High Nitrogen Content

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Journal of Wuhan University of Technology(Materials Science) 2005年第2期20卷 32-34页

作者：张存满 School of Material Science and Engineering Tongji UniversityShanghai 200092China Ph D

Mesoporous silicon oxynitrides MCM-41 were synthesized successfully. The resulting materials not only have high nitrogen contents and good structural characteristics of MCM-41 (high surface area, narrow pore size distribution and good order), but also are amorphous. The composition and structure of the materials were investigated by CNH element analysis, XPS, Si MAS NMR, XRD, HRTEM and N-2 sorption, respectively. Mesoporous silicon oxynitrides MCM-41 with a high nitrogen content are still non-crystal (amorphous).

关键词： mesoporous silicon oxynitride MCM-41 high nitrogen content

Enhanced red light emission from Si quantum dot-based silicon oxynitride light-emitting diodes with reduced efficiency droop

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Enhanced red light emission from Si quantum dot-based silico...

Etching characteristics of thin SiON films using a liquefied perfluorocarbon precursor of C_6F_(12)O with a low global warming potential

第三届粤港澳大湾区真空科技创新发展论坛暨2019年广东省真空学会学术年会

作者：郭艳青林泽文林圳旭宋捷宋超张文星黄锐 School of Materials Science and Engineering Hanshan Normal University

In the past decade,Si-based light sources compatible with the mainstream complementary metal-oxide semiconductor technology have attracted a great deal of interest owing to their potential application in monolithic Si optoelectronic integrated *** engineer Si into a more efficient light-emitting material,different approaches have been developed[1-4].Among them,the silicon oxynitride system has become an alternative for designing efficient Si-based LEDs,the advantages of which include tunable light emission,high PL efficiency and lower barriers for electrons and holes than silicon ***,the imbalanced electron and hole injection observed in SiN-and SiO-based emitting devices can be effectively improved in SiNOy-based ***,few reports on EL from Si QDs/SiONy have been *** this work,strong red light emission from silicon oxynitride-based light-emitting diodes(LEDs) was *** introduction of dense Si QDs into SiNOy not only increases carrier injection efficiency but also results in a significant enhancement of more than 300% in the light emission efficiency compared with SiNO-based LEDs without Si ***,the efficiency droop phenomenon is remarkably suppressed in the SiNOy-based LED containing dense Si *** of the dominant recombination process indicates that the improved performance of the SiNOy-based LEDs results from the increased bimolecular radiative recombination probability,which is suggested to arise from the quantum confinement effect of dense Si QDs and the improved balanced carrier injection in Si *** present results demonstrate that the dense Si QDs based SiCOy system can be a very competitive candidate in the photonic and optoelectronic applications.

关键词： electroluminescence Si quantum dots silicon oxynitride

来源： cnki会议评论

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cnki会议

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Plasma Science and Technology 2020年第10期22卷 135-144页

作者： Junmyung LEE Yunho NAM Jongchan LEE Hyun Woo LEE Kwang-Ho KWON Department of Control and Instrumentation Engineering Korea UniversitySejong 30019Republic of Korea Department of Aeronautic Computer Engineering Hanseo UniversitySeosan 31962Republic of Korea

Perfluorocarbon gas is widely used in the semiconductor ***,perfluorocarbon has a negative effect on the global environment owing to its high global warming potential(GWP) *** alternative solution is ***,we evaluated the possibility of replacing conventional perfluorocarbon etching gases such as CHF_3 with C_6F_(12)O,which has a low GWP and is in a liquid state at room *** this study,silicon oxynitride(SiON) films were plasma-etched using inductively coupled CF4+C_6F_(12)O+O_2 mixed ***,the etching characteristics of the film,such as etching rate,etching profile,selectivity over Si,and photoresist,were investigated.A double Langmuir probe was used and optical emission spectroscopy was performed for plasma *** addition,a contact angle goniometer and x-ray photoelectron spectroscope were used to confirm the change in the surface properties of the etched SiON film ***,the etching characteristics of the C_6F_(12)O mixed plasma exhibited a lower etching rate,higher SiON/Si selectivity,lower plasma damage,and more vertical etched profiles than the conventional CHF_3 mixed *** addition,the C_6F_(12)O gas can be recovered in the liquid state,thereby decreasing global *** results confirmed that the C_6F_(12)O precursor can sufficiently replace the conventional etching gas.

关键词： global warming potential perfluorocarbon silicon oxynitride etching characteristics liquid-state perfluorocarbon

High-temperature Reaction of Silica Fume-Si_3N_4 System

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China's Refractories 2009年第3期18卷 11-14页

作者： CHEN Junhong ZHAN Huasheng XIE Jing SUN Jialin School of Materials Science and Engineering University of Science and Technology Beijing Beijing 100083 China

The specimens were prepared by molding the mixture of silica fume （ w（ SiO2 ） =94. 5% ; average particle size ： 0. 08 μm ） and silicon nitride （ ≤ 0. 074 mm ） with a mass ratio of 1 ： 1, carbon embedded firing at 1 300 ℃, 1 450℃, 1 500℃, 1 550 ℃ and 1 600 ℃ for 3 h in air, and then water-cooling, respectively. The microstructure and phase composition of the specimens were analyzed. The results show that：（1） silica fume reacts obviously with Si3N4 forming Si2N2O above 1 550 ℃. The edges and corners of Si3N4 grains become smooth and the Si3 N4 grains distribute in the continuous cementation phase of Si2N2O forming the dense structure of Si2N2o packed Si3N4 ; （2） below 1 500 ℃ , the edges and corners of Si3N4 grains are clear, Si2N2O doesn＇t form, and only SiO2 crystallizes from silica fume which happens obviously at 1 300 ℃.

关键词： Silica fume silicon nitride silicon oxynitride