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silicon nanowire formed via shallow anisotropic etching Si-ash-trimming for specific DNA and electrochemical detection

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Chinese Physics B 2015年第6期24卷 607-612页

作者： Tijjani Adam U.HAshim Th S.Dhahi Institute of Nano Electronic Engineering(INEE) Universiti Malaysia Perlis(UniMAP) Physics Department College of Education for Pure ScienceBasra University

A functionalized silicon nanowire field-effect transistor （SiNW FET） was fabricated to detect single molecules in the pM range to detect disease at the early stage with a sensitive, robust, and inexpensive method with the ability to provide specific and reliable data. The device was designed and fabricated by indented ash trimming via shallow anisotropic etching. The approach is a simple and low-cost technique that is compatible with the current commercial semiconductor standard CMOS process without an expensive deep reactive ion etcher. Specific electric changes were observed for DNA sensing when the nanowire surface was modified with a complementary captured DNA probe and target DNA through an organic linker （--OCH2CH3） using organofunctional alkoxysilanes （3-aminopropyl） triethoxysilane （APTES）. With this surface modification, a single specific target molecule can be detected. The simplicity of the sensing domain makes it feasible to miniaturize it for the development of a cancer detection kit, facilitating its use in both clinical and non-clinical environments to allow non-expert interpretation. With its novel electric response and potential for mass commercial fabrication, this biosensor can be developed to become a portable/point of care biosensor for both field and diagnostic applications.

关键词： silicon nanowire biosensor specific DNA detection anisotropic etching Si-ash-trimming semi-conductor pH sensor

silicon nanowire ratioed inverters on bendable substrates

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Nano Research 2018年第5期11卷 2586-2591页

作者： Jeongje Moon Yoonjoong Kim Doohyeok Lim Kyeungmin Im Sangsig Kim Department of Electrical Engineering Korea University 145 Anam-ro Seongbuk-gu Seoul 02841 Republic of Korea LED PKG Development Group Samsung Electronics Co. Ltd. 1 Samsung-ro Yongin-si Gyeonggi-do 17113 Republic of Korea

In this study, we demonstrate the performance of silicon nanowire （SiNW） n-metal oxide semiconductor （MOS） and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricated devices can be controlled by adjusting the load voltage. The logic swings of the n- and p-MOS ratioed inverters at a low supply voltage of 1V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with good fatigue properties. Our bendable SiNW ratioed inverters show promise as a candidate building block for future bendable electronics.

关键词： silicon nanowire ratioed inverter n-metal oxide semicon-ductor (MOS) inverter p-MOS inverter bendable substrate

Conformal and continuous deposition of bifunctional cobalt phosphide layers on p-silicon nanowire arrays for improved solar hydrogen evolution

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Nano Research 2018年第9期11卷 4823-4835页

作者： Sitaramanjaneva Mouli Thalluri Jerome Borme Kang Yu Junyuan Xu Isilda Amorim Joao Gaspar Liang Qiao Paulo Ferreira Pedro Alpuim Lifeng Liu International Iberian Nanotechnology Laboratory (INL) Av. Mestre. Jose Veiga Braga 4715-330 Portugal Materials Science and Engineering Program University of Texas at Austin Austin TX78712 USA Deportment of Chemistry State Key Laboratory of Molecular Engineering of Polymers and Institute of Biomedical Sciences Fudon University Shanghai 200433 China Mechanical Engineering Department and IDMEC Instituto Superior Tdcnico University of Lisbon Av. Rovisco Pais Lisboa 1049-007 Portugal Center of Physics University of Minho Braga 4710-057 Portugal

Vertically aligned p-silicon nanowire （SiNW） arrays have been extensively investigated in recent years as promising photocathodes for solar-driven hydrogen evolution. However, the fabrication of SiNW photocathodes with both high photoelectrocatalytic activity and long-term operational stability using a simple and affordable approach is a challenging task. Herein, we report conformal and continuous deposition of a di-cobalt phosphide （C02P） layer on lithography- patterned highly ordered SiNW arrays via a cost-effective drop-casting method followed by a low-temperature phosphorization treatment. The as-deposited C02P layer consists of crystalline nanoparticles and has an intimate contact with SiNWs, forming a well-defined SiNW@Co2P core/shell nanostructure. The conformal and continuous Co2P layer functions as a highly efficient catalyst capable of substantially improving the photoelectrocatalytic activity for the hydrogen evolution reaction （HER） and effectively passivates the SiNWs to protect them from photo-oxidation, thus prolonging the lifetime of the electrode. As a consequence, the SiNW@Co2P photocathode with an optimized C02P layer thickness exhibits a high photocurrent density of -21.9 mA·cm^-2 at 0 V versus reversible hydrogen electrode and excellent operational stability up to 20 h for solar-driven hydrogen evolution, outperforming many nanostructured silicon photocathodes reported in the literature. The combination of passivation and catalytic functions in a single continuous layer represents a promising strategy for designing high-performance semiconductor photoelectrodes for use in solar-driven water splitting, which may simplify fabrication procedures and potentially reduce production costs.

关键词： solar-driven hydrogenevolution silicon nanowire cobalt phosphide photoelectrochemical water splitting drop-casting

A controllable fabrication improved silicon nanowire array sensor on(111)SOI for accurate bio-analysis application

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Nano Research 2022年第8期15卷 7468-7475页

作者： Zicheng Lu Hong Zhou Yi Wang Yanxiang Liu Tie Li Science and Technology on Micro-system Laboratory Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China University of Chinese Academy of Sciences(UCAS) Beijing 100190China

silicon nanowire field-effect transistor(SiNW-FET)sensors possess the ability of rapid response,real-time,and label-free detection with high sensitivity and selectivity in the analysis of charged *** nano-scale size makes them well suited for ultralow detection of charged molecules,but also brings the uniformity fabrication challenging,thus limiting their large-scale *** a horizontal control approach,highly controllable silicon nanowires arrays at the top of the silicon-on-insulator(SOI)wafer(T-SiNW)were developed in our previous *** further improve the device uniformity,here a novel SiNW fabricated approach was carefully designed by the combination of horizontal and vertical *** new silicon nanowires appeared at the bottom of the top silicon layer(B-SiNW).The B-SiNW has a relatively low requirement on the fabrication process and better device uniformity compared to *** improvements resulted in the B-SiNW device with a lower current fluctuation(4.1 nA with 5.1%variations)in the flowing liquid,compared to the T-SiNW device(4.4 nA with 11%variations).Further,in quantitative detection of 40 ng/mL MMP-9,the B-SiNW sensors provided larger signals and lower fluctuation(normalized average response value:0.57 with 4.2%variations),compared to the T-SiNW sensors(0.41 with 12.1%variations),thus indicating a more accurate bio-analysis application of the B-SiNW *** work advances the nanowire sensor technology a step closer toward large-scale application to create stable sensing platforms in disease diagnosis and monitoring.

关键词： silicon nanowire top-down (111)silicon-on-insulator triangular cross-section quantitative detection

Loose-fit graphitic encapsulation of silicon nanowire for one-dimensional Si anode design

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Journal of Materials Science & Technology 2017年第10期33卷 1120-1127页

作者： Seh-Yoon Lim Sudong Chae Su-Ho Jung Yuhwan Hyeon Wonseok Jang Won-Sub Yoon Jae-Young Choi Dongmok Whang School of Advanced Materials Science and Engineering SKKU Advanced Institute of Nanotechnology Sungkyunkwan University Suwon 440-746 South Korea Department of Energy Sdence Sungkyunkwan University Suwon 440-746 South Korea

silicon nanowires（SiNWs） encapsulated with graphene-like carbon sheath（GS） having a void space in between（SiNW@V@GS） are demonstrated for the improved electrochemical performance of Si anode in lithium ion battery. The Si NW@V@GS structure was synthesized by a scalable fabrication method including four successive reactions： metal-catalyzed CVD growth of Si NWs, controlled thermal oxidation, and deposition of the graphitic layer, to form Si NW@SiO2@GS and additional chemical etching of sacrificial SiO2 layer between Si NWs and carbon sheath. During the synthetic process, the thickness of the void spacing was controlled by adjusting the oxidation-dependent process. The well-controlled void space and crystalline graphitic carbon sheath of the SiNW@V@GS structure enable good reversible capacity of1444 m Ahg^（-1） and cycling stability of 85% over 150 cycles.

关键词： Lithium ion battery silicon nanowire Graphene Void spacing Anode

Influence of gold particle size on melting temperature of VLS grown silicon nanowire

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Journal of Semiconductors 2010年第1期31卷 4-8页

作者：姜岩峰张亚民 Microelectronic Center College of Information EngineeringNorth China University of Technology

Based on the Lindemann melting model, a model related to gold nanoparticle size and melting temperature for VLS grown silicon nanowire is proposed. Eutectic temperatures of Au-Si with different gold sizes have been calculated using the model and are in agreement with the experimental results. This model has been demonstrated to be reasonable, and it can be used to determine the growth temperature of silicon nanowire.

关键词： silicon nanowire eutectic temperature Au

In situ nanoscale refinement by highly controllable etching of the(111) silicon crystal plane and its influence on the enhanced electrical property of a silicon nanowire

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Journal of Semiconductors 2011年第12期32卷 53-57页

作者：龚宜彬戴鹏飞高安然李铁周萍王跃林 Science and Technology on Micro-System Laboratory State Key Laboratory of Transducer TechnologyShanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences

Nanoscale refinement on a （100） oriented silicon-on-insulator （SOI） wafer was introduced by using tetra-methyl-ammonium hydroxide （TMAH, 25 wt%） anisotropic silicon etchant, with temperature kept at 50 ℃ to achieve precise etching of the （111） crystal plane. Specifically for a silicon nanowire （SiNW） with oxide sidewall protection, the in situ TMAH process enabled effective size reduction in both lateral （2.3 nm/min） and vertical （1.7 nm/min） dimensions. A sub-50 nm SiNW with a length of microns with uniform triangular cross-section was achieved accordingly, yielding enhanced field effect transistor （FET） characteristics in comparison with its 100 nm- wide pre-refining counterpart, which demonstrated the feasibility of this highly controllable refinement process. Detailed examination revealed that the high surface quality of the （111） plane, as well as the bulk depletion property should be the causes of this electrical enhancement, which implies the great potential of the as-made cost-effective SiNW FET device in many fields.

关键词： TMAH etching nanofabrication silicon nanowire field effect transistor

Effects of source-drain underlaps on the performance of silicon nanowire on insulator transistors

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Nano-Micro Letters 2010年第2期2卷 83-88页

作者： Sishir Bhowmick Khairul Alam Department of Electrical and Electronic Engineering Bangladesh University of Engineering and Technology Department of Electrical and Electronic Engineering East West University

The effects of source-drain underlaps on the performance of a top gate silicon nanowire on insulator transistor are studied using a three dimensional(3D) self-consistent Poisson-Schrodinger quantum simulation. Voltage-controlled tunnel barrier is the device transport physics. The off current, the on/off current ratio, and the inverse subthreshold slope are improved while the on current is degraded with underlap. The physics behind this behavior is the modulation of a tunnel barrier with underlap. The underlap primarily affects the tunneling component of drain current. About 50% contribution to the gate capacitance comes from the fringing electric fields emanating from the gate metal to the source and drain. The gate capacitance reduces with underlap, which should reduce the intrinsic switching delay and increase the intrinsic cut-off frequency. However, both the on current and the transconductance reduce with underlap, and the consequence is the increase of delay and the reduction of cut-off frequency.

关键词： silicon nanowire Insulator transistors Source-drain

Progress in silicon nanowire-Based Field-Effect Transistor Biosensors for Label-Free Detection of DNA

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Chinese Journal of Chemistry 2016年第3期34卷 308-316页

作者： Na Lu Anran Gao Hong Zhou Yi Wang Xun Yang Yuelin Wang Tie Li Science and Technology on Microsystem Laboratory Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China School of Materials Engineering Shanghai University of Engineering Science Shanghai 201620 China

silicon nanowire （SiNW）, as one-dimensional semiconducting nanomaterial, has been incorporated into the filed-effect transistor （FET） devices to increase the efficacy and signal-to-noise in DNA sensing applications. Due to the advantages of high sensitivity, excellent selectivity, label-free detection, direct electrical readout, and minia- turization, SiNW FET-based DNA sensors have been regarded as an important tool in applications of molecular di- agnostics, DNA sequencing, gene expressions, and drug discovery. Here, we review the recent progress in SiNW- FET sensors for label-free electrical DNA detection. We first introduce the working principle of SiNW-FET DNA sensors, SiNW fabrication technologies, bio-functionalization on nanowire surface, and enhancement of device sen- sitivity. Then we sum up the applications of SiNW sensors in detection of DNA hybridization, infectious viruses, microRNA, genetic change （DNA mutation, DNA methylation, and DNA repair）, and protein-DNA interactions. We address several crucial points of sensing performance including sensitivity, selectivity, and limit of detection. Finally, the perspectives, challenges, and some solutions of the field are also discussed.

关键词： silicon nanowire field-effect transistors label-flee DNA detection