Loose-fit graphitic encapsulation of silicon nanowire for one-dimensional Si anode design

作     者：Seh-Yoon Lim Sudong Chae Su-Ho Jung Yuhwan Hyeon Wonseok Jang Won-Sub Yoon Jae-Young Choi Dongmok Whang 

作者机构：School of Advanced Materials Science and Engineering SKKU Advanced Institute of Nanotechnology Sungkyunkwan University Suwon 440-746 South Korea Department of Energy Sdence Sungkyunkwan University Suwon 440-746 South Korea 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2017年第33卷第10期

页      面：1120-1127页

核心收录：

学科分类：081702[工学-化学工艺] 0808[工学-电气工程] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0802[工学-机械工程] 0801[工学-力学（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the “Human Resources Program in Energy Technology” of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) the granted financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20154030200870) 

主　　题：Lithium ion battery Silicon nanowire Graphene Void spacing Anode 

摘      要：Silicon nanowires（SiNWs） encapsulated with graphene-like carbon sheath（GS） having a void space in between（SiNW@V@GS） are demonstrated for the improved electrochemical performance of Si anode in lithium ion battery. The Si NW@V@GS structure was synthesized by a scalable fabrication method including four successive reactions： metal-catalyzed CVD growth of Si NWs, controlled thermal oxidation, and deposition of the graphitic layer, to form Si NW@SiO2@GS and additional chemical etching of sacrificial SiO2 layer between Si NWs and carbon sheath. During the synthetic process, the thickness of the void spacing was controlled by adjusting the oxidation-dependent process. The well-controlled void space and crystalline graphitic carbon sheath of the SiNW@V@GS structure enable good reversible capacity of1444 m Ahg^（-1） and cycling stability of 85% over 150 cycles.