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COMPETING REACTIONS OF EXISTING Ni siLICIDE AND Ni OR si INDUCED BY THERMAL ANNEALING AND MeV si ION BEAM MIXING

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Nuclear Science and Techniques 1993年第3期4卷 158-163页

作者：朱德彰 M.C.Ridgway R.G.Elliman J.S.Williams G.Collins Shanghai Institute of Nuclcar Rescarch Academia Sinica Dept of Electronic Materials Engincering Research School of Physical Science and Engineering The Australian National University Canberra 2601 Australia Plasma and Surface Technologies Advanced Materials Program Australian Nuclear Science and Technology Organisation Lucas Heights NSW 2234 Australia

The competing reactions between existing Ni silicides surrounded by si and Ni were investigated by thermal annealing and MeV si ion beam mixing. With high energy irradiation, the energy deposition at both interfaces, Ni/Ni silicide and Ni silicide/si, is equal. Two MeV He^- RBS and TEM were used to obtain the reacted layer composition and epitaxial orientation, respectively. Also glancing angle Co K_a. X-ray diffraction was utilized to identify phase formation. The main results indicate that the existing silicides preferentially react with Ni layer, and that there are pronounced differences of Ni silicide phase transition between thermal annealing and MeV si ion beam mixing, even though the mixing was performed in radiation enhanced diffusion regime. The results can be explained in term of the heat of silicide formation and surface energy change.

关键词： Chemical reaction kinetics Ni silicides MeV si ion beam mixing Annealing RBS TEM

The modification behaviour for si implanted PET

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Science China(Technological Sciences) 2003年第2期46卷 125-130页

作者：吴瑜光张通和刘安东张旭周固 Key Laboratory in University for Radiation Beam Technology & Material Modification Institute of Low Energy Nuclear Physics Beijing Normal University Beijing Radiation Center Testing and Analysis Center Beijing Normal University

Polyethylene terephthalate (PET) has been modified by si ion implantation with a dose ranging from 1 1016 to 2 1017 ions /cm2 using a metal vapor vacuum arc(MEVVA)source. The surface morphology was observed by atomic force microscopy (AFM). The change in the microstructure of si implanted PET was observed with a transmission electron microscope (TEM). It is believed that the change would improve the conductive properties and wear resistance. The electrical properties of PET have been improved via si ion implantation. The resistivity of implanted PET decreased obviously with an increase in ion dose. When si ion dose was 2 1017 cm-2, the resistivity of PET could be less than 7.9 W·m. The surface hardness and modulus increased obviously. The mechanical property of the implanted PET has been modified greatly. The hardness and modulus of si implanted PET with a dose of 2 1017/cm2 are 12.5 and 2.45 times greater than those of pristine PET, respectively. The area of cutting groove for si implanted PET is narrower and shallower than those of the unimplanted PET. So the wear resistance is greatly raised. In comparison with metal ion implantation, the improvement of mechanical properties is obvious in ion implantation into PET. si ion beam modification mechanism of PET is discussed.

关键词： si ion implantation, electrical property, hardness and modulus, modification mechanism of polymer.

Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich silicon-on-Insulator Substrates

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Chinese Physics Letters 2018年第4期35卷 103-107页

作者：朱雷常永伟高楠苏鑫董业民费璐魏星王曦 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 School of Physical Science and Technology Shanghaitech University Shanghai 200031 University of Chinese Academy of Sciences Beijing 100049 Shanghai simgui Technology Co. Ltd. Shanghai 201815

Crystal morphologies and resistivity of polysilicon trap-rich layers of two-generation trap-rich silicon-on-insulator（TR-SOI） substrates are studied. It is found that the resistivity of the trap-rich layer of generation 2（TR-G2）is higher than that of generation 1（TR-G1）, although the crystal morphologies of the trap rich layers are the same. In addition, the rf performance of two-generation TR-SOI substrates is investigated by coplanar waveguide lines and inductors. The results show that both the rf loss and the second harmonic distortion of TR-G2 are smaller than those of TR-G1. These results can be attributed to the higher resistivity values of both the trap-rich layer and the high-resistivity silicon（HR-si） substrate of TR-G2. Moreover, the rf performance of the TR-SOI substrate with thicker buried oxide is slightly better. The second harmonics of various TR-SOI substrates are simulated and evaluated with the harmonic quality factor model as well. It can be predicted that the TR-SOI substrate will see further improvement in rf performance if the resistivities of both the trap-rich layer and HR-si substrate increase.

关键词： SOI si HR Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich silicon-on-Insulator Substrates TR

CuI-si Heterojunction Solar Cells with Carbon Nanotube Films as Flexible Top-Contact Electrodes

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Nano Research 2011年第10期4卷 979-986页

作者： Peixu Li ShanshanWang Yi Jia Zhen Li Chunyan Ji Luhui Zhang Hongbian Li Enzheng Shi Zuqiang Bian Chunhui Huang Jinquan Wei Kunlin Wang Hongwei Zhu Dehai Wu Anyuan Cao Department of Mechanical Engineering Tsinghua University Beijing 100084 China College of Chemistry and Molecular Engineering Peking University Beijing 100871 China College of Engineering Peking University Beijing 100871 China Center for Nano and Micro Mechanics Tsinghua University Beijing 100084 China These authors contributed equally to this work.

我们作为一个透明电极与碳 nanotubes (CNT ) 报导 CuI-si 异质接面太阳能电池的制造。一个灵活 CNT 网络被转移到多晶的 CuI 层的顶上，做有与内在的 CuI 的好接触的保角的涂层。太阳能电池在 6% ～ 10.5% 的范围显示出力量变换效率，... 详细信息

我们作为一个透明电极与碳 nanotubes (CNT ) 报导 CuI-si 异质接面太阳能电池的制造。一个灵活 CNT 网络被转移到多晶的 CuI 层的顶上，做有与内在的 CuI 的好接触的保角的涂层。太阳能电池在 6% ～ 10.5% 的范围显示出力量变换效率，当在设备在空中被存储为 8 天以后，效率降级是不到 10% 时。与象铟听氧化物(ITO ) 那样的常规僵硬电极相比玻璃， CNT 电影的灵活性与活跃的层保证更好的接触并且为出版社接触电极移开需要。降级的房间能由 CNT 电极做的酸恢复他们的原来的表演。我们的结果建议 CNT 电影与不平的表面是为不平的材料和结构的合适的电的接触。

关键词：薄膜太阳能电池碳纳米管薄膜接触电极异质结顶部 si 能量转换效率碳纳米管电极

Impact of Native Defects in the High Dielectric Constant Oxide HfsiO_4 on MOS Device Performance

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Chinese Physics Letters 2016年第1期33卷 92-95页

作者：董海宽史力斌 School of Mathematics and Physics Bohai University

Native dejects in HfsiO4 are investigated by first principles calculations. Transition levels of native detects can be accurately described by employing the nonlocal HSE06 hybrid functional. This methodology overcomes the band gap problem in traditional functionals. By band alignments among the si, GaAs and HfsiO4. we are able to determine the position of defect levels in si and GaAs relative to the HfsiO4 band gap. We evaluate the. possibility of these defects acting as fixed charge. Native defects lead to the change of valence and conduction band offsets. Gate leakage current is evaluated by the band offset. In addition, we also investigate diffusions of native defects, and discuss how they affect the MOS device performance.

关键词： MOS si of Impact of Native Defects in the High Dielectric Constant Oxide HfsiO4 on MOS Device Performance GaAs in on

EFFECT OF si ON THE MICROSTRUCTURE AND MECHANICAL PROPERTIES OF THE Al-4.5%Cu ALLOYS

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Acta Metallurgica sinica(English Letters) 2006年第6期19卷 405-410页

作者： N.Han X.F.Bian Z.K.Li T.Mao C.D.Wang Key Laboratory of Liquid Structure and Heredity of Materials Ministry of EducationShandong UniversityJinan 250061 China

The effect of si on the microstructure and mechanical properties of binary Al-4.5%Cu alloy has been investigated. The results show that the addition of si does not have any effect on alloy strength; however, it decreases the ductility of the as-cast Al-4.5%Cu alloy. It is obvious that after T4 heat treatment, the microstructure and mechanical properties of Al-4.5%Cu-si alloys are improved, especially for the alloy with an si addition of 2%.

关键词： Al-Cu alloy si heat treatment mechanical property

Optical-Electrical Characteristics and Carrier Dynamics of Semi-Insulation GaAs by Terahertz Spectroscopic Technique

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Chinese Physics Letters 2016年第12期33卷 23-27页

作者：韩小卫侯磊杨磊王志全赵萌萌施卫 Department of Applied Physics Xi'an University of Technology Institute of Physical and Electrical Engineering Weinan Normal University

OaAs has been widely used to fabricate a variety of optoelectronic devices by virtue of its superior performance, and it is very important to accurately measure its electrical and optical properties. In this study, a semi- insulation （si） GaAs wafer is investigated by the terahertz （THz） non-destructive testing technology. Using an air biased coherent generation and detection THz time domain spectroscopy system, the THz time domain waveform and spectrum of si-GaAs are obtained by the time domain spectroscopy module, and its optical- electrical characteristics including complex refractive index, permittivity and dielectric loss angle are calculated. Its carrier lifetime is measured by the optical-pump THz-probe module, and the THz pulse induced intervalley scattering in photo-excited si-GaAs is discussed.

关键词： GaAs THz si as of Optical-Electrical Characteristics and Carrier Dynamics of Semi-Insulation GaAs by Terahertz Spectroscopic Technique by

Wafer scale direct-write of Ge and si nanostructures with conducting stamps and a modified mask aligner

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Nano Research 2013年第4期6卷 263-268页

作者： Hideki Sato Stephanie E. Vasko Marco Rolandi Department of Materials Science and Engineering University of Washington Seattle WA 9819S USA Japan Patent Office Tokyo 100-8915 Japan Department of Chemistry University of Washington Seattle WA 98195 USA

The broad availability of high throughput nanostructure fabrication is essential for advancement in nanoscale science. Large-scale manufacturing developed by the semiconductor industry is often too resource-intensive for medium scale laboratory prototyping. We demonstrate the inexpensive wafer scale directwrite of Ge and si nanostructures with a 4-inch mask aligner retrofitted with a conducting microstructured stamp. A bias applied between the stamp and an underlying silicon substrate results in the reaction of diphenylgermane and diphenylsilane precursors at the stamp-substrate interface to yield the directwrite of Ge and si nanostructures in determined locations. With the increasing number of outdated mask aligners available from the semiconductor industry and an extensive library of liquid precursors, this strategy provides facile, inexpensive, wafer scale semiconductor direct-write for applications such as electronics, photonics, and photovoltaics.

关键词：硅纳米结构邮票晶圆光罩导电 si Ge 半导体行业

Investigation of siGe-on-Insulator Novel Structure

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Journal of Rare Earths 2004年第Z2期22卷 13-16页

作者： Lin Chenglu Liu Weili An Zhenghua Di Zengfeng Zhang Miao Shanghai Institute of Microsystem and Information Technology Chinese Academy of SciencesShanghai 200050China Shanghai siMGUI Technology Co. LtdShanghai Jiading 201821China Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Shanghai siMGUI Technology Co. LtdShanghai Jiading 201821China

siGe-on-Insulator (SGOI) is an ideal substrate material for realizing strained-silicon structures that are very competing and popular in present silicon technology. In this paper, two methods are proposed to fabricate SGOI novel structure. One is modified Separation by Implantation of Oxygen (siMOX) starting from pseuodomorphic siGe thin film without graded siGe buffer layer. Results show that two-step annealing can improve the cystallinity quality of siGe and block the Ge diffusion in high temperature annealing. SGOI structure with good quality has been obtained through two-step annealing. The second method is proposed to achieve SGOI with high content of Ge. High quality strained relax siGe is grown on a compliant silicon-on-insulator (SOI) substrate by UHCVD firstly. During high temperature oxidation,Ge atoms diffuse into the top si layer of SOI. We successfully obtain SGOI with the Ge content of 38%, which is available for the growth of strained si.

关键词： SGOI siMOX SOI strained si