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Design of vertical diamond schottky barrier diode with junction terminal extension structure by using the n-Ga_(2)O_(3)/p-diamond heterojunction

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Chinese Physics B 2022年第10期31卷 120-125页

作者： Wang Lin Ting-Ting Wang Qi-Liang Wang Xian-Yi Lv Gen-Zhuang Li Liu-An Li Jin-Ping Ao Guang-Tian Zou State Key Laboratory of Superhard Material College of PhysicsJilin UniversityChangchun 130012China Shenzhen Research Institute Jilin UniversityShenzhen 518057China National Key Discipline Laboratory of Wide Bandgap Semiconductor Xidian UniversityXi’an 710071China

A novel junction terminal extension structure is proposed for vertical diamond schottky barrier diodes(SBDs) by using an n-Ga_(2)O_(3)/p-diamond heterojunction. The depletion region of the heterojunction suppresses part of the forward current conduction path, which slightly increases the on-resistance. On the other hand, the reverse breakdown voltage is enhanced obviously because of attenuated electric field crowding. By optimizing the doping concentration, length, and depth of n-Ga_(2)O_(3), the trade-off between on-resistance and breakdown voltage with a high Baliga figure of merit(FOM)value is realized through Silvaco technology computer-aided design simulation. In addition, the effect of the work functions of the schottky electrodes is evaluated. The results are beneficial to realizing a high-performance vertical diamond SBD.

关键词： diamond schottky barrier diode junction terminal extension simulation

Modeling capacitance voltage characteristic of TiW/p-InP schottky barrier diode

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Chinese Physics B 2018年第9期27卷 500-503页

作者： Yi-Dong Wang Jun Chen School of Electronic and Information Engineering Soochow UniversitySuzhon 215006China

The capacitance-voltage（C-V） characteristic of the TiW/p-InP schottky barrier diodes（SBDs） is analyzed considering the effects of the interface state（N（ss））, series resistance（Rs）, and deep level defects. The C-V of the schottky contact is modeled based on the physical mechanism of the interfacial state and series resistance effect. The fitting coefficients α andβ are used to reflect the N（ss） and Rs on the C-V characteristics, respectively. The α decreases with the increase of frequency,while β increases with the increase of frequency. The capacitance increases with the increase of α and the decrease of β.From our model, the peak capacitance and its position can be estimated. The experimental value is found to be larger than the calculated one at the lower voltage. This phenomenon can be explained by the effect of deep level defects.

关键词： schottky barrier diode interface state series resistance

Analysis and simulation of a 4H-SiC semi-superjunction schottky barrier diode for softer reverse-recovery

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Chinese Physics B 2012年第1期21卷 449-452页

作者： Cao Lin Pu Hong-Bin Chen Zhi-Ming Zang Yuan Department of Electronic Engineering Xi'an University of TechnologyXi'an 710048China

In this paper, a 4H-SiC semi-superjunction （S J） schottky barrier diode is analysed and simulated. The semi-SJ structure has an optimized design and a specific on-resistance lower than that of conventional SJ structures, which can be achieved without increasing the process difficulty. The simulation results show that the specific on-resistance and the softness factor depend on the aspect and thickness ratios, and that by using the semi-SJ structure, specific on-resistance can be reduced without decreasing the softness factor. It is observed that a trade-off exists between the specific on-resistance and the softness of the diode.

关键词： 4H-SiC semi-superjunction schottky barrier diode softness factor

Improvement of Ga_(2)O_(3)vertical schottky barrier diode by constructing NiO/Ga_(2)O_(3)heterojunction

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Journal of Semiconductors 2024年第4期45卷 63-68页

作者： Xueqiang Ji Jinjin Wang Song Qi Yijie Liang Shengrun Hu Haochen Zheng Sai Zhang Jianying Yue Xiaohui Qi Shan Li Zeng Liu Lei Shu Weihua Tang Peigang Li School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China Beijing Microelectronics Technology Institute Beijing 100076China

The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic *** schottky metals and epitaxial films are essential for further enhancing device *** this work,the fabrication of vertical Ga_(2)O_(3)barrier diodes with three different barrier metals was carried out on an n--Ga_(2)O_(3)homogeneous epitaxial film deposited on an n+-β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition,excluding the use of edge *** ideal factor,barrier height,specific on-resistance,and breakdown voltage characteristics of all devices were investigated at room *** addition,the vertical Ga_(2)O_(3)barrier diodes achieve a higher breakdown volt-age and exhibit a reverse leakage as low as 4.82×10^(-8)A/cm^(2)by constructing a NiO/Ga_(2)O_(3)***,Ga_(2)O_(3)power detailed investigations into schottky barrier metal and NiO/Ga_(2)O_(3)heterojunction of Ga_(2)O_(3)homogeneous epitaxial films are of great research potential in high-efficiency,high-power,and high-reliability applications.

关键词： Ga_(2)O_(3) schottky barrier diode NiO/Ga_(2)O_(3)heterojunction

Hybrid-anode structure designed for a high-performance quasi-vertical GaN schottky barrier diode

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Chinese Physics B 2022年第5期31卷 652-656页

作者： Qiliang Wang Tingting Wang Taofei Pu Shaoheng Cheng Xiaobo Li Liuan Li Jinping Ao State Key Laboratory of Superhard Materials Jilin UniversityChangchun 130012China Shenzhen Research Institute Jilin UniversityShenzhen 518057China National Key Discipline Laboratory of Wide Band-gap Semiconductor School of MicroelectronicsXidian UniversityXi’an 710071China Institute of Technology and Science Tokushima UniversityTokushima 770-8506Japan

A quasi-vertical Ga N schottky barrier diode with a hybrid anode structure is proposed to trade off the on-resistance and the breakdown *** inserting a Si N dielectric between the anode metal with a relatively small length,it suppresses the electric field crowding effect without presenting an obvious effect on the forward *** enhanced breakdown voltage is ascribed to the charge-coupling effect between the insulation dielectric layer and Ga *** the other hand,the current density is decreased beneath the dielectric layer with the increasing length of the Si N,resulting in a high ***,the introduction of the field plate on the side wall forms an metal-oxide-semiconductor(MOS)channel and decreases the series resistance,but also shows an obvious electric field crowding effect at the bottom of the mesa due to the quasi-vertical structure.

关键词： schottky barrier diode hybrid anode dielectric edge termination

Optimization of recess-free AlGaN/GaN schottky barrier diode by TiN anode and current transport mechanism analysis

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Journal of Semiconductors 2022年第6期43卷 51-58页

作者： Hao Wu Xuanwu Kang Yingkui Zheng Ke Wei Lin Zhang Xinyu Liu Guoqi Zhang The Institute of Future Lighting Academy for Engineering and TechnologyFudan University(FAET)Shanghai 200433China Institute of Microelectronics of the Chinese Academy of Sciences Beijing 100029China Beijing Const-Intellectual Core Technology Co.Ltd Beijing 100029China

:In this work,the optimization of reverse leakage current(IR)and turn-on voltage(VT)in recess-free AlGaN/GaN schottky barrier diodes(SBDs)was achieved by substituting the Ni/Au anode with TiN *** explain this phenomenon,the current transport mechanism was investigated by temperature-dependent current–voltage(I–V)*** forward bias,the current is dominated by the thermionic emission(TE)mechanisms for both ***,the presence of inhomogeneity of the schottky barrier height(qφb)is proved by the linear relationship between qφb and ideality *** reverse bias,the current is dominated by two different mechanisms at high temperature and low temperature,*** high temperatures,the Poole–Frenkel emission(PFE)induced by nitrogen-vacancy(VN)is responsible for the high IR in Ni/Au *** TiN anode,the IR is dominated by the PFE from threading dislocation(TD),which can be attributed to the decrease of VN due to the suppression of N diffusion at the interface of schottky *** low temperatures,the IR of both diodes is dominated by Fowler–Nordheim(FN)***,the VN donor enhances the electric field in the barrier layer,thus causing a higher IR in Ni/Au anode than TiN anode,as confirmed by the modified FN model.

关键词： AlGaN/GaN schottky barrier diode TiN current transport mechanism

Investigation of lateral spreading current in the 4H-SiC schottky barrier diode chip

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Journal of Semiconductors 2021年第11期42卷 73-78页

作者： Xi Wang Yiwen Zhong Hongbin Pu Jichao Hu Xianfeng Feng Guowen Yang Department of Electronic Engineering Xi'an University of TechnologyXi'an 710048China Xi’an Key Laboratory of power Electronic Devices and High Efficiency Power Conversion Xi’an 710048China Sanli Intelligent Electric Co. LtdXi’an 712000China

Lateral current spreading in the 4H-SiC schottky barrier diode(SBD)chip is *** 4H-SiC SBD chips with the same vertical parameters are simulated and *** results indicate that there is a fixed spreading resistance at on-state in current spreading region for a specific *** linear specific spreading resistance at the on-state is calculated to be 8.6Ω/cm in the fabricated *** proportion of the lateral spreading current in total forward current(Psp)is related to anode voltage and the chip *** is increased with the increase in the anode voltage during initial on-state and then tends to a stable *** stable values of Psp of the two fabricated chips are 32%and 54%.Combined with theoretical analysis,the proportion of the terminal region and scribing trench in a whole chip(Ksp)is also calculated and compared with *** Ksp values of the two fabricated chips are calculated to be 31.94%and 57.75%.The values of Ksp and Psp are close with each other in a specific *** calculated Ksp can be used to predict that when the chip area of SiC SBD becomes larger than 0.5 cm2,the value of Psp would be lower than 10%.

关键词： 4H-SiC schottky barrier diode lateral spreading current

4H-SiC trench MOSFET with an integrated schottky barrier diode and L-shaped P^+shielding region

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Journal of Semiconductors 2020年第10期41卷 82-86页

作者： Xiaorong Luo Ke Zhang Xu Song Jian Fang Fei Yang Bo Zhang State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China Global Energy Interconnection Research Institute Beijing 102209China

A novel 4H-SiC trench MOSFET is presented and investigated by simulation in this *** device features an integrated schottky barrier diode and an L-shaped P^+shielding region beneath the gate trench and aside one wall of the gate trench(S-TMOS).The integrated schottky barrier diode works as a free-wheeling diode in reverse recovery and reverse conduction,which significantly reduces reverse recovery charge(Q_(rr))and reverse turn-on voltage(VF).The L-shaped P^+region effectively shields the coupling of gate and drain,resulting in a lower gate–drain capacitance(C_(gd))and date–drain charge(Q_(gd)).Compared with that of conventional SiC trench MOSFET(C-TMOS),the V_F and Q_(rr)of S-TMOS has reduced by 44%and 75%,respectively,with almost the same forward output current and reverse breakdown ***,the S-TMOS reduces Q_(gd)and C_(gd)by 32%and 22%,respectively,in comparison with C-TMOS.

关键词： SiC MOSFET schottky barrier diode reverse recovery gate-drain charge

High performance trench diamond junction barrier schottky diode with a sidewall-enhanced structure

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Chinese Physics B 2023年第8期32卷 479-485页

作者：朱盈林旺李东帅李柳暗吕宪义王启亮邹广田 State Key Laboratory of Superhard Materials College of PhysicsJilin UniversityChangchun 130012China Shenzhen Research Institute Jilin UniversityShenzhen 518057China

The trench diamond junction barrier schottky(JBS)diode with a sidewall enhanced structure is designed by Silvaco *** with the conventional trench JBS diode,schottky contact areas are introduced on the sidewall of the trench beside the top *** sidewall schottky contact weakens the junction field-effect transistor effect between the trenches to realize a low on-resistance and a high Baliga's figure of merit(FOM)*** addition,the existence of the n-type diamond helps to suppress the electric field crowding effect and enhance the reverse breakdown *** the optimal parameters of device structure,a high Baliga's FOM value of 2.28 GW/cm^(2) is ***,the proposed sidewall-enhanced trench JBS diode is a promising component for the applications in diamond power electronics.

关键词： diamond schottky barrier diode junction terminal extension simulation