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Exfoliation of bulk 2H-MoS_(2)into bilayer 1T-phase nanosheets via ether-induced SUPERLATTICES

Nano Research 2024年第6期17卷 5705-5711页

作者： Xiuling Shi Dongmei Lin Zhuorui Xiao Yibo Weng Hanxiang Zhou Xiaoying Long Zhiyu Ding Fuyuan Liang Yan Huang Guohua Chen Kaikai Li Tong-Yi Zhang School of Materials Science and Engineering Harbin Institute of TechnologyShenzhen 518055China Department of Mechanical Engineering Research Institute for Smart EnergyThe Hong Kong Polytechnic UniversityHong KongChina School of Energy and Environment City University of Hong KongTat Chee AvenueKowloonHong KongChina The Hong Kong University of Science and Technology(Guangzhou) Guangzhou Municipal Key Laboratory of Materials InformaticsAdvanced Materials Thrust and Sustainable Energy and Environment ThrustNanshaGuangzhou 511400China

The exfoliation of bulk 2H-molybdenum disulfide(2H-MoS_(2))into few-layer nanosheets with 1T-phase and controlled layers represents a daunting challenge towards the device applications of MoS_(2).Conventional ion intercalation assisted exfoliation needs the use of hazardous n-butyllithium and/or elaborate control of the intercalation potential to avoid the decomposition of the MoS_(2).This work reports a facile strategy by intercalating Li ions electrochemically with ether-based electrolyte into the van der Waals(vdW)channels of MoS_(2),which successfully avoids the decomposition of MoS_(2)at low potentials.The co-intercalation of Li+and the ether solvent into MoS_(2)makes a first-order phase transformation,forming a superlattice phase,which preserves the layered structure and hence enables the exfoliation of bulk 2H-MoS_(2)into bilayer nanosheets with 1T-phase.Compared with the pristine 2H-MoS_(2),the bilayer 1T-MoS_(2)nanosheets exhibit better electrocatalytic performance for the hydrogen evolution reaction(HER).This facile method should be easily extended to the exfoliation of various transition metal dichalcogenides(TMDs).

关键词： exfoliation of MoS_(2) phase transformations SUPERLATTICES ether electrolyte hydrogen evolution reaction(HER)

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Tunable Anisotropic Lattice Thermal Conductivity in One-Dimensional SUPERLATTICES from Molecular Dynamics Simulations

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Journal of Thermal Science 2022年第4期31卷 1068-1075页

作者： WANG Xiuqi AN Meng MA Weigang ZHANG Xing Key Laboratory for Thermal Science and Power Engineering of Ministry of Education Department of Engineering MechanicsTsinghua UniversityBeijing 100084China College of Mechanical and Electrical Engineering Shaanxi University of Science and TechnologyXi'an 710021China

Engineering nanostructured SUPERLATTICES provides an effective solution toward the realization of high-performance thermoelectric device and thermal management materials,where the anisotropic thermal conductivity is critical for designing orientation-dependent thermal devices.Herein,the lattice thermal conductivity anisotropy of Al/Ag SUPERLATTICES as one typical example of superlattice materials is investigated utilizing non-equilibrium molecular dynamics simulations.The cross-plane and in-plane lattice thermal conductivities of one-dimensional SUPERLATTICES are in the ranges of 0.5–3.2 W/(m·K)and 1.8–5.1 W/(m·K)at different period lengths,respectively,both of which are smaller than those of bulk materials.More specifically,the cross-plane lattice thermal conductivity of SUPERLATTICES increases with the period length,while the in-plane phonon thermal conductivity first increases and then trends to convergence,resulting in the non-monotonic thermal anisotropy value.To further reveal the microscopic phonon transport mechanism,the interfacial phonon thermal resistance,density of states and spectral phonon transmission coefficient including anharmonic phonon properties under different period lengths are calculated.Our results can be helpful for understanding phonon transport in low-dimensional materials and provide guidance for optimizing the thermal conductivity anisotropy of superlattice materials in the application ranging from thermoelectric devices to thermal management in micro/nano systems.

关键词： anisotropic thermal conductivity SUPERLATTICES phonon transport molecular dynamical simulations

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Temperature effects of GaAs/Al_(0.45)Ga_(0.55)As SUPERLATTICES on chaotic oscillation

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Chinese Physics B 2021年第10期30卷 481-487页

作者：罗晓朋刘延飞杨东东陈诚李修建应杰攀 Department of Basic Courses Rocket Force University of EngineeringXi’an 710025China College of Liberal Arts and Sciences National University of Defense TechnologyChangsha 410073China Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of SciencesSuzhou 215123China

For widespectrum chaotic oscillation,superlattice cryptography is an autonomous controllable brand-new technology.Originating from sequential resonance tunneling of electrons,the chaotic oscillation is susceptible to temperature change,which determines the performance of SUPERLATTICES.In this paper,the temperature effects of chaotic oscillations are investigated by analyzing the randomness of a sequence at different temperatures and explained with superlattice microstates.The results show that the bias voltage at different temperatures makes spontaneous chaotic oscillations vary.With the temperature of SUPERLATTICES changing,the sequence dives in entropy value and randomness at specific bias.This work fills the gap in the study of temperature stability and promotes superlattice cryptography for practice.

关键词： SUPERLATTICES chaotic oscillation temperature randomness

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Electric gating of the multichannel conduction in LaAlO_(3)/SrTiO_(3) SUPERLATTICES

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Chinese Physics B 2021年第1期30卷 477-482页

作者：齐少锦孙璇严曦张慧张洪瑞张金娥黄海林韩福荣宋京华沈保根陈沅沙 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China

The electric gating on the transport properties of two-dimensional electron gas(2DEG) at the interface of LaAlO_(3)/SrTiO_(3)(LAO/STO) heterostructure has attracted great research interest due to its potential application in fieldeffect devices. Most of previous works of gate effect were focused on the LAO/STO heterostructure containing only one conductive interface. Here, we systematically investigated the gate effect on high-quality LAO/STO SUPERLATTICES(SLs)fabricated on the TiO_(2)-terminated(001) STO substrates. In addition to the good metallicity of all SLs, we found that there are two types of charge carriers, the majority carriers and the minority carriers, coexisting in the SLs. The sheet resistance of the SLs with a fixed thickness of the LAO layer increases monotonically as the thickness of the STO layer increases. This is derived from the dependence of the minority carrier density on the thickness of STO. Unlike the LAO/STO heterostructure in which minority and majority carriers are simultaneously modulated by the gate effect, the minority carriers in the SLs can be tuned more significantly by the electric gating while the density of majority carriers is almost invariable. Thus, we consider that the minority carriers may mainly exist in the first interface near the STO substrate that is more sensitive to the back-gate voltage, and the majority carriers exist in the post-deposited STO layers. The SL structure provides the space separation for the multichannel conduction in the 2 DEG, which opens an avenue for the design of field-effect devices based on LAO/STO heterostructure.

关键词： SUPERLATTICES gate effect minority carriers majority carriers

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Tunable metal-insulator transition in LaTiO3/CaVO3 SUPERLATTICES:A theoretical study

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Chinese Physics B 2020年第12期29卷 442-447页

作者：翁亚奎沈梦兰李杰李兴鳌 School of Science Nanjing University of Posts and TelecommunicationsNanjing 210023China School of Materials Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China Grünberg Research Center Nanjing University of Posts and TelecommunicationsNanjing 210023China

As one of intriguing physical results of electronic reconstruction,the metal-insulator transition plays an important role in exploring new electronic devices.In this study,the density functional theory is employed to investigate the metal-insulator transition in(LaTiO3)m/(CaVO3)n SUPERLATTICES.Herein,three kinds of physical avenues,i.e.,stacking orientation,epitaxial strain,and thickness periods,are used to tune the metal-insulator transition.Our calculations find that the[001]-and[110]-oriented(LaTiO3)1/(CaVO3)1 SUPERLATTICES on SrTiO3 substrate are insulating,while[111]-oriented case is metallic.Such metallic behavior in[111]orientation can also be modulated by epitaxial strain.Besides the structural orientation and strain effect,the highly probable metal-insulator transition is presented in(LaTiO3)m/(CaVO3)n SUPERLATTICES with increasing thickness.In addition,several interesting physical phenomena have also been revealed,such as selective charge transfer,charge ordering,and orbital ordering.

关键词： metal-insulator transition SUPERLATTICES charge transfer

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Band structure engineering through van der Waals heterostructing SUPERLATTICES of two-dimensional transition metal dichalcogenides

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InfoMat 2021年第2期3卷 201-211页

作者： Xin-Gang Zhao Zhiming Shi Xinjiang Wang Hongshuai Zou Yuhao Fu Lijun Zhang State Key Laboratory of Integrated Optoelectronics Key Laboratory of Automobile Materials of MOECollege of Materials Science and EngineeringJilin UniversityChangchunJilinChina State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchunJilinChina College of Physics Jilin UniversityChangchunJilinChina

The indirect-to-direct band-gap transition in transition metal dichalcogenides(TMDCs)from bulk to monolayer,accompanying with other unique properties of two-dimensional materials,has endowed them great potential in optoelectronic devices.The easy transferability and feasible epitaxial growth pave a promising way to further tune the optical properties by constructing van der Waals heterostructures.Here,we performed a systematic high-throughput first-principles study of electronic structure and optical properties of the layerby-layer stacking TMDCs heterostructing SUPERLATTICES,with the configuration space of[(MX2)n(M0X02)10−n](M/M0=Cr,Mo,W;X/X0=S,Se,Te;n=0-10).Our calculations involving long-range dispersive interaction show that the indirect-to-direct band-gap transition or even semiconductor-to-metal transition can be realized by changing component compositions of SUPERLATTICES.Further analysis indicates that the indirect-to-direct band-gap transition can be ascribed to the in-plane strain induced by lattice mismatch.The semiconductor-to-metal transition may be attributed to the band offset among different components that is modified by the in-plane strain.The SUPERLATTICES with direct band-gap show quite weak band-gap optical transition because of the spacial separation of the electronic states involved.In general,the layers stacking-order of SUPERLATTICES results in a small up to 0.2 eV band gap fluctuation because of the built-in potential.Our results provide useful guidance for engineering band structure and optical properties in TMDCs heterostructing SUPERLATTICES.

关键词： heterostructures indirect-to-direct band-gap transition SUPERLATTICES transition metal dichalcogenides two-dimensional materials

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High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb SUPERLATTICES

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Chinese Physics B 2023年第3期32卷 589-593页

作者：蒋俊锴常发冉周文广李农陈伟强蒋洞微郝宏玥王国伟吴东海徐应强牛智川 State Key Laboratory for SUPERLATTICES and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 101408China Center of Materials Science and Optoelectronics Engineering College of Materials Science and Opto-Electronic TechnologyUniversity of Chinese Academy of SciencesBeijing 100049China

High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb SUPERLATTICES on GaSb substrate have been demonstrated.At 300 K,the device exhibits a 50%cut-off wavelength of~2.1μm as predicted from the band structure calculation;the device responsivity peaks at 0.85 A/W,corresponding to a quantum efficiency(QE)of 56%for 2.0μm-thick absorption region.The dark current density of 1.03×10^(-3)A/cm^(2)is obtained under 50 mV applied bias.The device exhibits a saturated dark current shot noise limited specific detectivity(D*)of 3.29×1010cm·Hz^(1/2)/W(at a peak responsivity of 2.0μm)under-50 mV applied bias.

关键词： photodetectors infrared SUPERLATTICES

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Defect solitons supported by parity-time symmetric defects in SUPERLATTICES

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Chinese Physics B 2013年第7期22卷 192-196页

作者：胡素梅胡巍 Department of Physics Guangdong University of Petrochemical Technology Laboratory of Photonic Information Technology South China Normal University

The existence and stability of defect solitons supported by parity-time （PT） symmetric defects in SUPERLATTICES are investigated. In the semi-infinite gap, in-phase solitons are found to exist stably for positive defects, zero defects, and negative defects. In the first gap, out-of-phase solitons are stable for positive defects or zero defects, whereas in-phase solitons are stable for negative defects. For both the in-phase and out-of-phase solitons with the positive defect and in-phase solitons with negative defect in the first gap, there exists a cutoff point of the propagation constant below which the defect solitons vanish. The value of the cutoff point depends on the depth of defect and the imaginary parts of the PT symmetric defect potentials. The influence of the imaginary part of the PT symmetric defect potentials on soliton stability is revealed.

关键词： defect solitons parity-time symmetric defect SUPERLATTICES

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Van der Waals integration of artificial heterostructures and highorder SUPERLATTICES

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National Science Open 2023年第1期2卷 52-61页

作者： Qi Qian Zhong Wan Xiangfeng Duan Department of Chemistry and Biochemistry University of CaliforniaLos Angeles CA 90095USA California NanoSystems Institute University of California Los AngelesLos Angeles CA 90095USA

The recent blossom in 2D atomic crystals(2DACs)has ignited intense interest in a new type of bond-free van der Waals heterostructures(vdWHs),in which distinct material components are physically brought together within a vdW distance and held together by weak vdW interactions.Without direct chemical bonding between the constituent materials,the vdWHs negate the lattice matching requirements in typical epitaxially bonded heterostructures.Here we briefly summarize the key advances in the construction and fundamental investigation of versatile vdWHs from diverse 2DACs and beyond,and highlight a unique class of vdW SUPERLATTICES(vdWSLs)consisting of alternating 2D atomic layers and/or self-assembled molecular layers,with tailored structural symmetry,electronic band modulation,interlayer coupling,and chirality.Lastly,we conclude with a brief outlook on the opportunities in exploring such artificial materials to unlock previously inaccessible physical limits and enable new device concepts beyond the reach of the existing materials.

关键词： van der Waals integration heterostructures high-order SUPERLATTICES

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Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSb SUPERLATTICES

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Journal of Semiconductors 2013年第11期34卷 74-78页

作者：王国伟向伟徐应强张亮彭振宇吕衍秋司俊杰王娟邢军亮任正伟牛智川 State Key Laboratory of SUPERLATTICES and Microstructures Institute of Semiconductors Chinese Academy of Sciences Luoyang Optical Electronics Development Center

We present the fabrication of a mid-wavelength infrared focal plane array （FPA） based on type-II InAs/GaSb strain layer SUPERLATTICES （SLs）. The detectors contain a 400-period 8 ML InAs/8 ML GaSb SL active layer, which is grown by solid source molecular beam epitaxy on GaSb （100） N type substrates. Lattice mismatch between the SUPERLATTICES and GaSb substrate achieves 148.9 ppm. The full width at half maximum of the first or- der satellite peak from X-ray diffraction was 28 arcsec. Single element detectors and FPA with a 128 x 128 pixels were fabricated using citric acid based solution wet chemical etching. Chemical and physical passivation effectively reduces the surface leakage and this process was characterized by I-V measurement. The devices showed a 50% cut-off wavelength of 4.73 μm at 77 K. The photodiode exhibited an RoA of 103 f2. cm2. The FPA was characterized with an integration time of 0.5 ms and F/2.0 optics at 77 K and the average blackbody detectivity of the detectors is 2.01 × 10^9 cm.Hz^1/2/W.

关键词： SUPERLATTICES GaSb focal plane array infrared detector

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