Tunable metal-insulator transition in LaTiO3/CaVO3 superlattices:A theoretical study
Tunable metal–insulator transition in LaTiO3/CaVO3 superlattices: A theoretical study作者机构:School of ScienceNanjing University of Posts and TelecommunicationsNanjing 210023China School of Materials Science and EngineeringNanjing University of Posts and TelecommunicationsNanjing 210023China Grünberg Research CenterNanjing University of Posts and TelecommunicationsNanjing 210023China
出 版 物:《Chinese Physics B》 (中国物理B(英文版))
年 卷 期:2020年第29卷第12期
页 面:442-447页
核心收录:
学科分类:07[理学] 070205[理学-凝聚态物理] 0805[工学-材料科学与工程(可授工学、理学学位)] 0704[理学-天文学] 0702[理学-物理学]
基 金:Project supported by the National Natural Science Foundation of China(Grant Nos.11804168 and 51872145) the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK20180736 and BK20190726) the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(Grant No.18KJB140009) the Science Foundation from Nanjing University of Posts and Telecommunications,China(Grant No.NY219026).
主 题:metal-insulator transition superlattices charge transfer
摘 要:As one of intriguing physical results of electronic reconstruction,the metal-insulator transition plays an important role in exploring new electronic devices.In this study,the density functional theory is employed to investigate the metal-insulator transition in(LaTiO3)m/(CaVO3)n superlattices.Herein,three kinds of physical avenues,i.e.,stacking orientation,epitaxial strain,and thickness periods,are used to tune the metal-insulator transition.Our calculations find that the[001]-and[110]-oriented(LaTiO3)1/(CaVO3)1 superlattices on SrTiO3 substrate are insulating,while[111]-oriented case is metallic.Such metallic behavior in[111]orientation can also be modulated by epitaxial strain.Besides the structural orientation and strain effect,the highly probable metal-insulator transition is presented in(LaTiO3)m/(CaVO3)n superlattices with increasing thickness.In addition,several interesting physical phenomena have also been revealed,such as selective charge transfer,charge ordering,and orbital ordering.